NXP Semiconductors PHP78NQ03LT,127
- Part No.:
- PHP78NQ03LT,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP78NQ03LT,127.pdf
- Description:
- MOSFET N-CH 25V 75A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:6,720
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Product details
Overview
PHP78NQ03LT,127 from NXP Semiconductors is a logic-level N-channel TrenchMOS power MOSFET in TO-220AB (SOT78) package, rated for 25 V VDS, 75 A ID at 10 V VGS, and 93 W Ptot at Tmb = 25 °C. It delivers 7.65 mΩ RDS(on) at VGS = 10 V and 25 °C, enabling high-efficiency switching in DC-to-DC converters and motherboard power stages.
For engineers reviewing the PHP78NQ03LT,127 datasheet, PHP78NQ03LT,127 pinout, PHP78NQ03LT,127 application, or PHP78NQ03LT,127 equivalent, key selection criteria include logic-level gate drive compatibility (VGS(th) = 1–2 V), low RDS(on) at 5 V gate drive (11.5–13.5 mΩ), fast switching (td(on) = 20–33 ns, QGD = 4.2–5.6 nC), and thermal performance with Rth(j-mb) = 1.6 K/W.
Technical Context
This device employs TrenchMOS technology to achieve enhanced conduction efficiency and switching speed. Its gate threshold voltage (VGS(th)) ranges from 0.5 V at 175 °C to 2.2 V at –55 °C, ensuring reliable turn-on across industrial temperature extremes while maintaining logic-level compatibility down to 5 V drive.
The integrated source-drain diode supports synchronous rectification with VSD = 0.95–1.2 V at 25 A and trr = 40 ns, and avalanche ruggedness is specified at EDS(AL)S = 185 mJ under unclamped inductive switching conditions - critical for robust operation in hard-switched topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V maximum drain-source voltage - defines safe blocking capability in low-voltage power rails (e.g., 12 V/5 V systems). |
| RDS(on) | 7.65–9 mΩ at VGS = 10 V, 25 °C - enables <1.9 W conduction loss at 50 A, reducing heatsink requirements. |
| QGD | 4.2–5.6 nC - low gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency. |
| td(on)/tf | 20–33 ns / 40–60 ns - fast turn-on and fall times support >500 kHz switching in compact DC-DC designs. |
| Rth(j-mb) | 1.6 K/W - low junction-to-mounting-base thermal resistance allows direct heatsink mounting for high-power dissipation. |
| VGS(th) | 1–2 V typical at 25 °C - ensures full enhancement with standard 3.3 V or 5 V logic-level drivers without level-shifting. |
| ID (pulsed) | 228 A peak drain current (tp ≤10 µs) - supports high-current transient loads in CPU VRMs and POL converters. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted mounting base (pin 2/mb connected to drain), 1 mounting hole, 3 leads.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; accepts logic-level input (3.3 V/5 V); low QG(tot) = 13 nC reduces driver power demand. |
| 2 / mb | D (Drain) / Mounting Base | Main power output node and thermally conductive heatsink interface; electrically tied to drain for low-inductance thermal path. |
| 3 | S (Source) | Power return path and reference for gate drive; connects to ground or low-side switch node in buck topologies. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) = 1–2 V enables direct interfacing with microcontrollers, PWM controllers, and 3.3 V/5 V logic without gate drivers. |
| TrenchMOS technology | Delivers 7.65 mΩ RDS(on) at 10 V and 25 °C - 25% lower on-resistance than planar MOSFETs of comparable size and rating. |
| Fast switching | QGD = 4.2–5.6 nC and tr/tf = 92–130 ns / 40–60 ns reduce switching losses in high-frequency DC-DC converters. |
| Avalanche-rated | EDS(AL)S = 185 mJ (unclamped) provides margin against inductive energy spikes in non-synchronous buck or motor drive circuits. |
| Thermally optimized | Rth(j-mb) = 1.6 K/W allows >70 W continuous dissipation with moderate heatsinking - suitable for space-constrained motherboard VRMs. |
Applications
| Computer Motherboard VRM | DC-to-DC Converter |
|---|---|
|
Use Scenario: High-current, high-efficiency voltage regulation for CPU/GPU core supplies on ATX motherboards. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch in multiphase buck converter topology. Use Value: 7.65 mΩ RDS(on) at 10 V gate drive minimizes conduction loss at 50–100 A load currents, improving VRM efficiency by ≥1.2% versus higher-RDS(on) alternatives. |
Use Scenario: Primary switching element in isolated or non-isolated 12 V to 3.3 V/1.8 V point-of-load (POL) converters. IC Role / Device Role / Timing Role: Power switch in high-frequency (300–1000 kHz) buck regulator stage. Use Value: Fast 20–33 ns turn-on delay and 40–60 ns fall time enable stable operation at >500 kHz, reducing output filter size and cost. |
| Industrial Motor Drive | Hot-Swap Controller |
|
Use Scenario: Half-bridge low-side switch in 24 V BLDC motor gate driver modules for HVAC and automation. IC Role / Device Role / Timing Role: Logic-level-controlled power switch handling pulsed 60–80 A motor phase currents. Use Value: 228 A peak drain current rating and 185 mJ avalanche energy withstand ensure robustness during commutation transients and fault events. |
Use Scenario: Inrush current limiter and fault protection switch in 12 V/24 V backplane hot-swap circuits. IC Role / Device Role / Timing Role: Controlled turn-on switch with precise gate drive timing to limit dI/dt during insertion. Use Value: Low 11.5–13.5 mΩ RDS(on) at 5 V VGS enables soft-start control using standard 5 V microcontroller GPIO, eliminating dedicated hot-swap ICs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 6.0 mΩ @ 10 V (lower), but VDS = 30 V (higher); QGD = 6.2 nC (higher); TO-220 package. | Better conduction loss at high current, but slower switching and less optimized for 25 V systems. | Prefer when lower RDS(on) dominates over switching speed and system voltage is ≤30 V. |
| STP75NF75 | RDS(on) = 10.5 mΩ @ 10 V (higher); VDS = 75 V; QGD = 12 nC (higher); TO-220 package. | Higher voltage rating trades off conduction and switching performance for wider blocking range. | Select only if 75 V blocking is required; otherwise PHP78NQ03LT,127 offers superior efficiency in 25 V applications. |
Compared with IRL3803PBF and STP75NF75, PHP78NQ03LT,127 provides optimal balance for 25 V logic-level switching: lowest QGD/RDS(on) ratio (0.73 nC/mΩ), fastest switching, and best thermal resistance (1.6 K/W), making it ideal for high-density, high-efficiency DC-DC and motherboard VRM designs.
Availability
PHP78NQ03LT,127 is available at Aetrix Electronics and suitable for computer motherboard VRMs, industrial DC-to-DC converters, and hot-swap controller circuits requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHP78NQ03LT,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.
The PHP78NQ03LT,127 belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered specifically for high-efficiency, high-current switching in computing and communications infrastructure where low gate drive voltage and thermal performance are critical.
FAQ
What is the maximum continuous drain current for PHP78NQ03LT,127 at 100 °C mounting base temperature?
The PHP78NQ03LT,127 supports 53 A continuous drain current at VGS = 10 V and Tmb = 100 °C, as specified in Table 4 (Limiting values). This derating reflects thermal constraints at elevated temperatures and must be verified against actual PCB layout and heatsink performance in the final design.
Does PHP78NQ03LT,127 have an integrated body diode, and what are its key parameters?
Yes, PHP78NQ03LT,127 includes an integrated source-drain diode with VSD = 0.95–1.2 V at 25 A and Tj = 25 °C, and reverse recovery time trr = 40 ns. These values support synchronous rectification and freewheeling in buck and half-bridge topologies without external diodes.
What is the gate threshold voltage range of PHP78NQ03LT,127 across temperature?
The PHP78NQ03LT,127 exhibits a gate threshold voltage (VGS(th)) of 1–2 V at 25 °C, 0.5 V minimum at 175 °C, and up to 2.2 V maximum at –55 °C. This wide operational window ensures reliable turn-on with 3.3 V or 5 V logic drivers across industrial temperature ranges.
Can PHP78NQ03LT,127 be used in avalanche mode, and what is its rated energy?
Yes, PHP78NQ03LT,127 is rated for non-repetitive drain-source avalanche energy EDS(AL)S = 185 mJ under specified test conditions (VGS = 10 V, ID = 43 A, unclamped, tp = 0.25 ms). This rating applies to single-event inductive switching stress, not continuous operation.
What is the thermal resistance from junction to mounting base for PHP78NQ03LT,127?
The PHP78NQ03LT,127 has a maximum thermal resistance Rth(j-mb) of 1.6 K/W, measured from junction to mounting base (Table 5). This value assumes proper mechanical mounting to a heatsink and is critical for calculating junction temperature rise under load.
PHP78NQ03LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 9mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 13 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1074 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 93W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP78NQ03LT,127 FAQ
1.How can I place an order for PHP78NQ03LT,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP78NQ03LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP78NQ03LT,127 reliable?
The price and inventory of PHP78NQ03LT,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP78NQ03LT,127 is usually 5 days.
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Once your PHP78NQ03LT,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP78NQ03LT,127?
For technical support, including PHP78NQ03LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP78NQ03LT,127 requirements.
6.How does Aetrix verify that PHP78NQ03LT,127 is sourced from the original manufacturer or authorized distributors?
All PHP78NQ03LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP78NQ03LT,127 meets industry standards.
7.What is the process for return or replacement of PHP78NQ03LT,127?
All PHP78NQ03LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP78NQ03LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP78NQ03LT,127 part is unused and in its original packaging.
Return procedure for PHP78NQ03LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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