Nexperia USA Inc. PHP79NQ08LT,127
- Part No.:
- PHP79NQ08LT,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP79NQ08LT,127.pdf
- Description:
- MOSFET N-CH 75V 73A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:2,649
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Product details
Overview
PHP79NQ08LT from NXP Semiconductors is a logic-level N-channel TrenchMOS power FET in TO-220AB (SOT78) package, designed for high-current switching in DC-DC converters and industrial power supplies. It delivers 73 A continuous drain current at 10 V gate drive, 14 mΩ RDS(on) at 25 °C, and 75 V drain-source breakdown voltage - enabling efficient 12–48 V system-level power management.
For engineers reviewing the PHP79NQ08LT datasheet, PHP79NQ08LT pinout, PHP79NQ08LT application, or PHP79NQ08LT equivalent, this device supports logic-compatible gate drive (VGS(th) = 1.1–2.0 V), offers avalanche ruggedness (120 mJ), and integrates a low-loss source-drain diode (VSD = 0.85 V @ 25 A) - critical for synchronous rectification and motor control designs.
Technical Context
This MOSFET employs TrenchMOS technology to achieve low on-resistance and fast switching with QGD = 14 nC and tr = 102 ns at VGS = 5 V. Its gate threshold voltage range (0.5–2.3 V) ensures reliable turn-on with 3.3 V or 5 V microcontroller outputs without level-shifting.
The device features a thermally optimized TO-220AB package with mounting base electrically connected to the drain, delivering Rth(j-mb) = 0.95 K/W for direct heatsink coupling. Its safe operating area supports 240 A pulsed drain current and unclamped avalanche energy up to 120 mJ - suitable for inductive load switching with minimal snubbering.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 75 V - supports 48 V nominal bus systems with 50 % safety margin against transients |
| ID (continuous) | 73 A @ Tmb = 25 °C - enables high-power buck/boost stages without parallel devices |
| RDS(on) | 14 mΩ @ VGS = 10 V, ID = 25 A, Tj = 25 °C - reduces conduction loss to ≤0.88 W at 25 A |
| QGD | 14 nC - minimizes Miller-induced switching delay and gate drive power in hard-switched topologies |
| VGS(th) | 1.1–2.0 V @ Tj = 25 °C - ensures full enhancement with standard 3.3 V logic outputs |
| EAS | 120 mJ - withstands inductive energy dump in relay/motor driver applications without external clamping |
| Rth(j-mb) | 0.95 K/W - allows 157 W power dissipation with ≤150 K temperature rise to heatsink |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mounted metal base electrically tied to drain terminal. Mounting hole enables mechanical stability and thermal transfer to external heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | High-impedance control input; requires <100 nA leakage current drive; compatible with 3.3 V/5 V logic |
| 2 (D) | Drain | Main power output node; electrically connected to mounting base for low-inductance heatsinking |
| 3 (S) | Source | Power return path; referenced to gate drive ground; forms common node for current sensing |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | VGS(th) ≤ 2.0 V ensures full enhancement using standard MCU GPIOs without gate drivers |
| Low RDS(on) | 14 mΩ at 10 V drive reduces I²R losses by >30 % vs. comparable 20 mΩ FETs in 25 A applications |
| TrenchMOS architecture | Enables higher cell density and lower gate charge (QG(tot) = 30 nC) for faster switching |
| Integrated body diode | VSD = 0.85 V @ 25 A supports freewheeling in H-bridge and flyback topologies |
| Avalanche-rated | 120 mJ unclamped EAS eliminates need for external TVS in solenoid/relay snubbing circuits |
Applications
| DC-DC Converters | Motor Control |
|---|---|
|
Use Scenario: High-efficiency 48 V input, 12 V output synchronous buck converter in telecom power supplies. IC Role / Device Role / Timing Role: Primary high-side switch handling 50 A continuous current with 100 kHz PWM switching. Use Value: 14 mΩ RDS(on) limits conduction loss to 0.35 W at 50 A, improving full-load efficiency by ≥1.2 % over 18 mΩ alternatives. |
Use Scenario: Bidirectional 24 V brushed DC motor driver in industrial automation actuators. IC Role / Device Role / Timing Role: Low-side switch in H-bridge configuration, commutated at 20 kHz with dead-time control. Use Value: Logic-level VGS(th) ensures clean turn-on with 3.3 V FPGA outputs; 240 A pulsed rating handles motor stall currents. |
| Uninterruptible Power Supplies | Lamp & Solenoid Drivers |
|
Use Scenario: Transfer switch and battery charging FET in 1 kVA line-interactive UPS. IC Role / Device Role / Timing Role: Main AC/DC isolation switch and battery disconnect MOSFET operating in linear and saturated modes. Use Value: 75 V VDS rating accommodates 60 V peak rectified mains; 157 W Ptot supports 10 s overload without thermal shutdown. |
Use Scenario: High-current incandescent lamp dimmer and solenoid actuator in building HVAC controls. IC Role / Device Role / Timing Role: Pulse-width modulated power switch driving 100 W resistive loads and 30 W inductive solenoids. Use Value: Avalanche ruggedness (120 mJ) absorbs back-EMF from 30 W solenoids; low QGD prevents shoot-through during fast PWM transitions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power FET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF75 | RDS(on) = 10.5 mΩ @ 10 V but VGS(th) = 2.0–4.0 V; higher gate charge (QG = 120 nC) | Requires 5 V gate drive; less suitable for 3.3 V MCU control; slower switching | Prefer when lowest conduction loss dominates and gate drive voltage ≥5 V is available |
| IRFZ44NPBF | RDS(on) = 28 mΩ @ 10 V; VGS(th) = 2–4 V; no avalanche rating specified | Higher conduction loss (2×); unsuitable for inductive switching without external protection | Acceptable only in cost-sensitive, low-frequency (<10 kHz), non-avalanche applications |
Compared with STP75NF75 and IRFZ44NPBF, PHP79NQ08LT uniquely balances logic-level compatibility (≤2 V threshold), low RDS(on), and rated avalanche energy - making it optimal for compact, 3.3 V-controlled industrial power stages where reliability under transient stress is mandatory.
Availability
PHP79NQ08LT is available at Aetrix Electronics and suitable for DC-DC convertors, motor control systems, and uninterruptible power supplies requiring stable component supply across extended production lifecycles.
Supply support for PHP79NQ08LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
PHP79NQ08LT belongs to NXP's TrenchMOS logic-level power FET product line, engineered for high-current, medium-voltage switching in computing, communications, and industrial power conversion - emphasizing robustness, thermal performance, and logic-compatible drive.
FAQ
Is PHP79NQ08LT suitable for 3.3 V microcontroller gate drive?
Yes. With a gate threshold voltage of 1.1–2.0 V at 25 °C and guaranteed turn-on at VGS = 4.5 V, PHP79NQ08LT fully enhances using standard 3.3 V GPIO outputs. Its low QG (30 nC) further ensures minimal gate drive power and fast switching without external buffers.
What is the maximum continuous current at 100 °C mounting base temperature?
At Tmb = 100 °C, PHP79NQ08LT supports 51 A continuous drain current with VGS = 10 V, per Figure 1 in the datasheet. This derating reflects thermal limits - junction-to-mounting-base resistance is 0.95 K/W, so 51 A yields ~120 K temperature rise above heatsink.
Does PHP79NQ08LT include an integrated body diode, and what are its characteristics?
Yes. The intrinsic source-drain diode has VSD = 0.85 V at 25 A and 25 °C, with reverse recovery time trr = 90 ns and recovered charge Qr = 110 nC. These values enable use in freewheeling paths of buck converters and H-bridges without external diodes in many cases.
Can PHP79NQ08LT be used in avalanche mode, and what is its rated energy?
Yes. PHP79NQ08LT is fully rated for unclamped inductive switching with EAS = 120 mJ at Tj(init) = 25 °C, ID = 35 A, and Vsup ≤ 75 V. This specification is validated per JEDEC standards and permits reliable operation in relay, solenoid, and motor drive circuits without external clamping components.
PHP79NQ08LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 73A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 16mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 30 nC @ 5 V
- Vgs (Max):
- ±15V
- Input Capacitance (Ciss) (Max) @ Vds:
- 3026 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 157W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP79NQ08LT,127 FAQ
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Please submit a Request for Quotation (RFQ) for PHP79NQ08LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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5.How can I obtain technical support or documentation for PHP79NQ08LT,127?
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6.How does Aetrix verify that PHP79NQ08LT,127 is sourced from the original manufacturer or authorized distributors?
All PHP79NQ08LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP79NQ08LT,127 meets industry standards.
7.What is the process for return or replacement of PHP79NQ08LT,127?
All PHP79NQ08LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP79NQ08LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP79NQ08LT,127 part is unused and in its original packaging.
Return procedure for PHP79NQ08LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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