NXP Semiconductors PHP83N03LT,127

Overview

PHP83N03LT from NXP Semiconductors (formerly Philips) is an N-channel logic-level TrenchMOS™ power transistor in SOT78 (TO-220AB) package, rated for 25 V V_DS, 75 A I_D (DC at T_mb = 25 °C), and 115 W P_tot. It delivers 6.5 mΩ R_DS(on) at V_GS = 10 V and supports high-frequency switching in DC–DC converters on computer motherboards.

For engineers reviewing the PHP83N03LT datasheet, PHP83N03LT pinout, PHP83N03LT application, or PHP83N03LT equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.5 V typ), low on-resistance at 5 V gate drive (10 mΩ), avalanche ruggedness (120 mJ E_AS), and thermal resistance of 1.3 K/W from junction to mounting base.

Technical Context

This device uses TrenchMOS™ technology to achieve low R_DS(on) and fast switching with 9 ns t_d(on), 14 ns t_r, 75 ns t_d(off), and 60 ns t_f under resistive load conditions. Its gate charge profile includes 33 nC Q_g(tot), 7 nC Q_gs, and 12.5 nC Q_gd, enabling efficient PWM control in synchronous buck stages.

The source-drain diode exhibits 0.9 V V_SD at 25 A and supports 75 A continuous forward current, while the device operates across −55 °C to +175 °C junction temperature range and withstands ±15 V gate-source voltage (±20 V pulsed).

Key Specifications

Pinout & Package

SOT78 (TO-220AB) plastic single-ended package with isolated mounting base electrically connected to drain (pin 2). Pin 1 = gate (G), pin 2 = drain (D), pin 3 = source (S); mounting base serves as thermal and electrical extension of drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRL3803PBF and STP80NF55-08, PHP83N03LT offers the best balance of low gate charge (33 nC), verified avalanche energy (120 mJ), and logic-level drive (1.5 V V_GS(th)) for high-frequency, high-current DC–DC applications below 25 V, without sacrificing thermal performance or package compatibility.

Availability

PHP83N03LT is available at Aetrix Electronics and suitable for server VRMs, laptop CPU power stages, industrial PLC power supplies, and telecom board DC–DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for PHP83N03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, headquartered in Eindhoven, Netherlands.

The PHP83N03LT belongs to the TrenchMOS™ logic-level power MOSFET product line, engineered specifically for high-efficiency, high-frequency DC–DC conversion in computing and communications infrastructure where low gate drive voltage and robust thermal performance are essential.

FAQ

What is the maximum continuous drain current rating for PHP83N03LT at 100 °C mounting base temperature?

The PHP83N03LT supports 61 A continuous drain current (I_D) at T_mb = 100 °C and V_GS = 5 V, as specified in Table 3 (Limiting values). This derating reflects thermal constraints when heatsinking is limited, and must be validated against actual PCB copper area and airflow in the final design. The PHP83N03LT's 1.3 K/W R_th(j-mb) enables this current level with appropriate thermal interface material and heatsink contact.

Does PHP83N03LT have avalanche capability, and how is it characterized?

Yes, PHP83N03LT is rated for non-repetitive avalanche energy (E_AS) of 120 mJ under defined test conditions: unclamped inductive load, I_D = 75 A, t_p = 0.1 ms, V_DD = 15 V, R_GS = 50 Ω, V_GS = 5 V, starting T_j = 25 °C. This rating is confirmed in Table 3 and ensures robustness against transient voltage spikes during hard switching, a key requirement in synchronous buck converters where PHP83N03LT is commonly deployed.

What is the gate-source threshold voltage range for PHP83N03LT across temperature?

The PHP83N03LT has a gate-source threshold voltage (V_GS(th)) of 1.0–2.0 V at T_j = 25 °C, 0.5–2.3 V at T_j = −55 °C to +175 °C per Table 5. This wide operational window ensures reliable turn-on with 3.3 V or 5 V logic drivers across industrial temperature ranges, and the PHP83N03LT maintains sufficient overdrive margin even at elevated junction temperatures where V_GS(th) decreases.

Can PHP83N03LT be used with 3.3 V gate drive in high-frequency applications?

Yes, PHP83N03LT is explicitly designed as a logic-level MOSFET with V_GS(th) = 1.5 V typical and R_DS(on) = 10–12 mΩ at V_GS = 5 V and 17–20.5 mΩ at V_GS = 5 V and T_j = 175 °C. While 3.3 V drive yields higher R_DS(on) than 5 V, the PHP83N03LT remains fully enhanced and usable up to ~300 kHz in well-designed gate drive circuits; however, 5 V drive is recommended for optimal efficiency and thermal margin in sustained high-current operation.

What is the thermal resistance from junction to mounting base for PHP83N03LT, and how does it impact heatsink selection?

The PHP83N03LT has R_th(j-mb) = 1.3 K/W, measured from junction to mounting base (Table 4). This low value means that for every watt dissipated, the junction rises only 1.3 °C above the mounting base temperature. When designing heatsinks, this value must be combined with R_{th(mb-heatsink)} and R_{th(heatsink-ambient)}; for example, at 80 W dissipation, a 1.3 K/W R_th(j-mb) contributes 104 °C of the total thermal budget - making low-contact-resistance interface materials and finned aluminum heatsinks essential to maintain T_j ≤ 175 °C in the PHP83N03LT.