Nexperia USA Inc. PHP9NQ20T,127
- Part No.:
- PHP9NQ20T,127
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3
- Datasheet:
-
PHP9NQ20T,127.pdf
- Description:
- MOSFET N-CH 200V 8.7A TO220AB
- Quantity:
- Payment:

- Shipping:

Inventory:8,400
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Product details
Overview
PHP9NQ20T,127 from Nexperia is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78) package, designed for high-efficiency switching in power conversion stages. It delivers 200 V VDS, 8.7 A continuous drain current at Tmb = 25 °C, and 300–400 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, enabling use in off-line SMPS and DC-DC converters.
For engineers reviewing the PHP9NQ20T,127 datasheet, PHP9NQ20T,127 pinout, PHP9NQ20T,127 application, or PHP9NQ20T,127 equivalent, key selection criteria include thermal resistance (Rth(j-mb) = 1.7 K/W), fast switching (tr = 19 ns, tf = 15 ns), avalanche ruggedness (EAS = 93 mJ), and gate charge (QGD = 12 nC).
Technical Context
This device employs TrenchMOS technology to achieve low conduction losses and high thermal efficiency. Its mounting base (tab) is internally connected to the drain, enabling direct heatsink coupling and minimizing thermal path resistance - critical for sustained 88 W power dissipation at Tmb = 25 °C.
The FET features a gate threshold voltage of 2–4 V at 25 °C and maintains stable operation up to Tj = 175 °C. Its dynamic characteristics - including Ciss = 959 pF, Coss = 93 pF, and Crss = 54 pF - support high-frequency switching in hard-switched topologies without excessive drive loss.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 200 V - supports primary-side switching in universal-input off-line SMPS up to 265 VAC. |
| ID (continuous) | 8.7 A at Tmb = 25 °C - enables medium-power DC-DC stages with minimal parallel devices. |
| RDS(on) | 300–400 mΩ at VGS = 10 V, ID = 4.5 A, Tj = 25 °C - reduces conduction loss in 12–48 V output converters. |
| QGD | 12 nC - limits Miller-induced switching delay and improves controllability in high-dV/dt environments. |
| Rth(j-mb) | 1.7 K/W - allows efficient heat transfer to external heatsink, supporting >70 W continuous operation with modest cooling. |
| tr/tf | 19 ns / 15 ns - enables operation above 200 kHz in hard-switched topologies with low switching loss. |
| EAS | 93 mJ - provides unclamped inductive avalanche capability for robustness in motor control and relay driving. |
Pinout & Package
Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mountable metal tab (drain-connected), 3 leads, and one mounting hole. Mounting base serves as both mechanical anchor and primary thermal interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Controls channel conduction; requires 10 V drive for full enhancement; threshold 2–4 V ensures TTL/CMOS compatibility. |
| 2 (D) | Drain | High-voltage power input node; electrically tied to mounting base for low-inductance, low-thermal-resistance heatsinking. |
| 3 (S) | Source | Power return path and reference for gate drive; internal source bond pad inductance is 7.5 nH - impacts high-speed layout. |
Key Features
| Feature | Design Value |
|---|---|
| Low RDS(on) | 300–400 mΩ at 10 V drive - directly reduces I²R conduction loss in 5–10 A load ranges. |
| TrenchMOS architecture | Enables higher cell density and lower gate charge vs planar MOSFETs - improves switching efficiency at 100–500 kHz. |
| Drain-connected mounting base | Eliminates need for insulating washer while maintaining thermal performance - simplifies heatsink integration and lowers assembly cost. |
| Avalanche-rated | 93 mJ non-repetitive EAS - withstands inductive turn-off transients in motor drives and solenoid controls without external snubbers. |
| Fast switching | tr = 19 ns, tf = 15 ns - minimizes overlap loss during PWM transitions in synchronous rectifiers and half-bridges. |
Applications
| DC-DC Converters | Off-line SMPS |
|---|---|
|
Use Scenario: Step-down (buck) converter in telecom power modules delivering 12 V/5 A from 48 V input. IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300 kHz with gate-driven control. Use Value: Low RDS(on) and fast switching reduce total power loss to <1.2 W, improving system efficiency to >94%. |
Use Scenario: Primary-side switch in 65 W open-frame AC-DC adapter for monitors and set-top boxes. IC Role / Device Role / Timing Role: High-voltage switching transistor in flyback topology, handling 265 VAC input peaks. Use Value: 200 V rating and 93 mJ avalanche energy ensure reliable operation during line surges and no-load transients. |
| Motor Control Circuits | General Purpose Switching |
|
Use Scenario: H-bridge leg in 24 V brushed DC motor driver for industrial actuators. IC Role / Device Role / Timing Role: Low-side or high-side power switch controlled by isolated gate driver with 5.6 Ω external resistor. Use Value: 35 A peak drain current and 1.7 K/W thermal resistance allow 100% duty cycle operation under forced air cooling. |
Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules. IC Role / Device Role / Timing Role: Load switching element driven by microcontroller GPIO through level-shifting buffer. Use Value: Gate threshold of 2–4 V ensures clean turn-on with 3.3 V or 5 V logic, eliminating need for dedicated gate drivers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP9NK20ZFP | Zener-protected avalanche rating (EAS = 120 mJ); higher RDS(on) (450 mΩ typ); TO-220FP package (no drain-tab exposure). | Better surge immunity but requires insulating pad; less thermally efficient due to plastic isolation. | Prefer when enhanced overvoltage robustness is prioritized over thermal performance. |
| IRF640NPBF | Higher VDS (200 V same), but higher RDS(on) (180 mΩ min at 10 V, but 250 mΩ typical at 25 °C); slower switching (tr = 55 ns). | Lower conduction loss only at elevated VGS; unsuitable for >100 kHz due to higher QG and Coss. | Choose only for legacy designs where gate drive voltage exceeds 12 V and frequency <80 kHz. |
Compared with STP9NK20ZFP and IRF640NPBF, PHP9NQ20T,127 offers superior thermal management via drain-connected tab, tighter RDS(on) distribution, and faster switching - making it optimal for compact, high-efficiency, medium-frequency power stages where heatsink access is available.
Availability
PHP9NQ20T,127 is available at Aetrix Electronics and suitable for off-line switched-mode power supplies, DC-DC converters, and motor control circuits requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.
Supply support for PHP9NQ20T,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, serving computing, communications, consumer, and industrial markets.
The PHP9NQ20T belongs to Nexperia's standard-level TrenchMOS power MOSFET product line, engineered for cost-sensitive yet thermally demanding applications where robustness, consistency, and ease of heatsink integration are essential.
FAQ
Is PHP9NQ20T,127 suitable for automotive applications?
No. The PHP9NQ20T,127 is not AEC-Q101 qualified and is explicitly rated for computing, communications, consumer, and industrial use only. It lacks automotive-grade screening, extended temperature validation beyond −55 °C to +175 °C junction, and zero-defect manufacturing controls required for automotive systems.
What is the maximum safe gate-source voltage for continuous operation?
The absolute maximum VGS is ±30 V, but for reliable long-term operation, Nexperia specifies a recommended maximum of ±20 V. Exceeding ±20 V risks gate oxide degradation, especially at elevated temperatures or with transient overshoots from PCB trace inductance.
Can the mounting base be electrically isolated from the heatsink?
No - the mounting base is internally connected to the drain terminal. Electrical isolation requires an insulated mounting kit (e.g., silicone pad + shoulder washer), which increases Rth(j-mb) by ≥0.5 K/W and must be accounted for in thermal design.
Does PHP9NQ20T,127 include integrated gate protection?
No. This device has no built-in gate protection diode or Zener clamp. External gate resistors (≥5.6 Ω) and TVS diodes (e.g., P6KE15A) between gate and source are required to suppress ESD and dv/dt-induced gate ringing in real-world layouts.
PHP9NQ20T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 8.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 400mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 24 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 959 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 88W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB
PHP9NQ20T,127 FAQ
1.How can I place an order for PHP9NQ20T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHP9NQ20T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHP9NQ20T,127 reliable?
The price and inventory of PHP9NQ20T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP9NQ20T,127 is usually 5 days.
3.What payment methods are accepted for PHP9NQ20T,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP9NQ20T,127 transactions.
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4.How is shipping managed for PHP9NQ20T,127?
PHP9NQ20T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHP9NQ20T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHP9NQ20T,127?
For technical support, including PHP9NQ20T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP9NQ20T,127 requirements.
6.How does Aetrix verify that PHP9NQ20T,127 is sourced from the original manufacturer or authorized distributors?
All PHP9NQ20T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP9NQ20T,127 meets industry standards.
7.What is the process for return or replacement of PHP9NQ20T,127?
All PHP9NQ20T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP9NQ20T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHP9NQ20T,127 part is unused and in its original packaging.
Return procedure for PHP9NQ20T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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