Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Nexperia USA Inc. PHP9NQ20T,127

Part No.:
PHP9NQ20T,127
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
AetrixPHP9NQ20T,127.pdf
Description:
MOSFET N-CH 200V 8.7A TO220AB
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,400

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

PHP9NQ20T,127 from Nexperia is a standard-level N-channel TrenchMOS FET in TO-220AB (SOT78) package, designed for high-efficiency switching in power conversion stages. It delivers 200 V VDS, 8.7 A continuous drain current at Tmb = 25 °C, and 300–400 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C, enabling use in off-line SMPS and DC-DC converters.

For engineers reviewing the PHP9NQ20T,127 datasheet, PHP9NQ20T,127 pinout, PHP9NQ20T,127 application, or PHP9NQ20T,127 equivalent, key selection criteria include thermal resistance (Rth(j-mb) = 1.7 K/W), fast switching (tr = 19 ns, tf = 15 ns), avalanche ruggedness (EAS = 93 mJ), and gate charge (QGD = 12 nC).

Technical Context

This device employs TrenchMOS technology to achieve low conduction losses and high thermal efficiency. Its mounting base (tab) is internally connected to the drain, enabling direct heatsink coupling and minimizing thermal path resistance - critical for sustained 88 W power dissipation at Tmb = 25 °C.

The FET features a gate threshold voltage of 2–4 V at 25 °C and maintains stable operation up to Tj = 175 °C. Its dynamic characteristics - including Ciss = 959 pF, Coss = 93 pF, and Crss = 54 pF - support high-frequency switching in hard-switched topologies without excessive drive loss.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 200 V - supports primary-side switching in universal-input off-line SMPS up to 265 VAC.
ID (continuous) 8.7 A at Tmb = 25 °C - enables medium-power DC-DC stages with minimal parallel devices.
RDS(on) 300–400 mΩ at VGS = 10 V, ID = 4.5 A, Tj = 25 °C - reduces conduction loss in 12–48 V output converters.
QGD 12 nC - limits Miller-induced switching delay and improves controllability in high-dV/dt environments.
Rth(j-mb) 1.7 K/W - allows efficient heat transfer to external heatsink, supporting >70 W continuous operation with modest cooling.
tr/tf 19 ns / 15 ns - enables operation above 200 kHz in hard-switched topologies with low switching loss.
EAS 93 mJ - provides unclamped inductive avalanche capability for robustness in motor control and relay driving.

Pinout & Package

Package: TO-220AB (SOT78), plastic single-ended package with heatsink-mountable metal tab (drain-connected), 3 leads, and one mounting hole. Mounting base serves as both mechanical anchor and primary thermal interface.

Pin/Terminal Circuit Role Design Meaning
1 (G) Gate Controls channel conduction; requires 10 V drive for full enhancement; threshold 2–4 V ensures TTL/CMOS compatibility.
2 (D) Drain High-voltage power input node; electrically tied to mounting base for low-inductance, low-thermal-resistance heatsinking.
3 (S) Source Power return path and reference for gate drive; internal source bond pad inductance is 7.5 nH - impacts high-speed layout.

Key Features

Feature Design Value
Low RDS(on) 300–400 mΩ at 10 V drive - directly reduces I²R conduction loss in 5–10 A load ranges.
TrenchMOS architecture Enables higher cell density and lower gate charge vs planar MOSFETs - improves switching efficiency at 100–500 kHz.
Drain-connected mounting base Eliminates need for insulating washer while maintaining thermal performance - simplifies heatsink integration and lowers assembly cost.
Avalanche-rated 93 mJ non-repetitive EAS - withstands inductive turn-off transients in motor drives and solenoid controls without external snubbers.
Fast switching tr = 19 ns, tf = 15 ns - minimizes overlap loss during PWM transitions in synchronous rectifiers and half-bridges.

Applications

DC-DC Converters Off-line SMPS

Use Scenario: Step-down (buck) converter in telecom power modules delivering 12 V/5 A from 48 V input.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier switch operating at 300 kHz with gate-driven control.

Use Value: Low RDS(on) and fast switching reduce total power loss to <1.2 W, improving system efficiency to >94%.

Use Scenario: Primary-side switch in 65 W open-frame AC-DC adapter for monitors and set-top boxes.

IC Role / Device Role / Timing Role: High-voltage switching transistor in flyback topology, handling 265 VAC input peaks.

Use Value: 200 V rating and 93 mJ avalanche energy ensure reliable operation during line surges and no-load transients.

Motor Control Circuits General Purpose Switching

Use Scenario: H-bridge leg in 24 V brushed DC motor driver for industrial actuators.

IC Role / Device Role / Timing Role: Low-side or high-side power switch controlled by isolated gate driver with 5.6 Ω external resistor.

Use Value: 35 A peak drain current and 1.7 K/W thermal resistance allow 100% duty cycle operation under forced air cooling.

Use Scenario: Solid-state relay replacement in programmable logic controller (PLC) output modules.

IC Role / Device Role / Timing Role: Load switching element driven by microcontroller GPIO through level-shifting buffer.

Use Value: Gate threshold of 2–4 V ensures clean turn-on with 3.3 V or 5 V logic, eliminating need for dedicated gate drivers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
STP9NK20ZFP Zener-protected avalanche rating (EAS = 120 mJ); higher RDS(on) (450 mΩ typ); TO-220FP package (no drain-tab exposure). Better surge immunity but requires insulating pad; less thermally efficient due to plastic isolation. Prefer when enhanced overvoltage robustness is prioritized over thermal performance.
IRF640NPBF Higher VDS (200 V same), but higher RDS(on) (180 mΩ min at 10 V, but 250 mΩ typical at 25 °C); slower switching (tr = 55 ns). Lower conduction loss only at elevated VGS; unsuitable for >100 kHz due to higher QG and Coss. Choose only for legacy designs where gate drive voltage exceeds 12 V and frequency <80 kHz.

Compared with STP9NK20ZFP and IRF640NPBF, PHP9NQ20T,127 offers superior thermal management via drain-connected tab, tighter RDS(on) distribution, and faster switching - making it optimal for compact, high-efficiency, medium-frequency power stages where heatsink access is available.

Availability

PHP9NQ20T,127 is available at Aetrix Electronics and suitable for off-line switched-mode power supplies, DC-DC converters, and motor control circuits requiring stable component supply, long-term manufacturability, and consistent parametric performance across production lots.

Supply support for PHP9NQ20T,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, serving computing, communications, consumer, and industrial markets.

The PHP9NQ20T belongs to Nexperia's standard-level TrenchMOS power MOSFET product line, engineered for cost-sensitive yet thermally demanding applications where robustness, consistency, and ease of heatsink integration are essential.

FAQ

Is PHP9NQ20T,127 suitable for automotive applications?

No. The PHP9NQ20T,127 is not AEC-Q101 qualified and is explicitly rated for computing, communications, consumer, and industrial use only. It lacks automotive-grade screening, extended temperature validation beyond −55 °C to +175 °C junction, and zero-defect manufacturing controls required for automotive systems.

What is the maximum safe gate-source voltage for continuous operation?

The absolute maximum VGS is ±30 V, but for reliable long-term operation, Nexperia specifies a recommended maximum of ±20 V. Exceeding ±20 V risks gate oxide degradation, especially at elevated temperatures or with transient overshoots from PCB trace inductance.

Can the mounting base be electrically isolated from the heatsink?

No - the mounting base is internally connected to the drain terminal. Electrical isolation requires an insulated mounting kit (e.g., silicone pad + shoulder washer), which increases Rth(j-mb) by ≥0.5 K/W and must be accounted for in thermal design.

Does PHP9NQ20T,127 include integrated gate protection?

No. This device has no built-in gate protection diode or Zener clamp. External gate resistors (≥5.6 Ω) and TVS diodes (e.g., P6KE15A) between gate and source are required to suppress ESD and dv/dt-induced gate ringing in real-world layouts.

PHP9NQ20T,127 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
TrenchMOS™
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
8.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
400mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
959 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
88W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB

PHP9NQ20T,127 FAQ

1.How can I place an order for PHP9NQ20T,127 through Aetrix?

Please submit a Request for Quotation (RFQ) for PHP9NQ20T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PHP9NQ20T,127 reliable?

The price and inventory of PHP9NQ20T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHP9NQ20T,127 is usually 5 days.

3.What payment methods are accepted for PHP9NQ20T,127?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHP9NQ20T,127 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PHP9NQ20T,127?

PHP9NQ20T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PHP9NQ20T,127 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PHP9NQ20T,127?

For technical support, including PHP9NQ20T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHP9NQ20T,127 requirements.

6.How does Aetrix verify that PHP9NQ20T,127 is sourced from the original manufacturer or authorized distributors?

All PHP9NQ20T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHP9NQ20T,127 meets industry standards.

7.What is the process for return or replacement of PHP9NQ20T,127?

All PHP9NQ20T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHP9NQ20T,127, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PHP9NQ20T,127 part is unused and in its original packaging.

Return procedure for PHP9NQ20T,127:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

PHP9NQ20T,127 Tags

  • PHP9NQ20T,127
  • PHP9NQ20T,127 PDF
  • PHP9NQ20T,127 Datasheet
  • PHP9NQ20T,127 Specifications
  • PHP9NQ20T,127 Images
  • Nexperia USA Inc.
  • Nexperia USA Inc. PHP9NQ20T,127
  • Buy PHP9NQ20T,127
  • PHP9NQ20T,127 Price
  • PHP9NQ20T,127 Distributor
  • PHP9NQ20T,127 Supplier
  • PHP9NQ20T,127 Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER