NXP Semiconductors PHT2NQ10T,135

Overview

PHT2NQ10T,135 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power transistor in SOT223 package, rated for 100 V drain-source voltage, 2.5 A continuous drain current at 25 °C, and 430 mΩ maximum R_DS(on) at V_GS = 10 V and I_D = 1.75 A. It serves as a primary-side switching element in DC-DC converters requiring fast switching and surface-mount reliability.

For engineers reviewing the PHT2NQ10T,135 datasheet, PHT2NQ10T,135 pinout, PHT2NQ10T,135 application, or PHT2NQ10T,135 equivalent, key selection criteria include its 100 V V_DS rating, 6.25 W power dissipation at T_sp = 25 °C, 20 K/W junction-to-solder-point thermal resistance, avalanche ruggedness (32 mJ E_AS), and SOT223 pin configuration with dual-drain terminals.

Technical Context

The PHT2NQ10T,135 employs TrenchMOS™ technology to achieve low on-resistance and fast switching performance. Its gate threshold voltage ranges from 2 V to 4 V at 25 °C, and R_DS(on) increases to 990 mΩ at 150 °C junction temperature - confirming strong thermal derating behavior.

Dynamic characteristics include 5.1 nC total gate charge, 2.1 nC Miller charge, and sub-10 ns turn-on/turn-off delay times under standard test conditions (V_DD = 50 V, R_G = 6 Ω). The integrated source-drain diode exhibits 45 ns reverse recovery time and 90 nC recovered charge, supporting synchronous or quasi-resonant topologies.

Key Specifications

Pinout & Package

SOT223 plastic surface-mount package with collector pad (drain-connected tab) for enhanced thermal transfer; 4-terminal configuration with Pin 1 = Gate, Pin 2 = Drain, Pin 3 = Source, Pin 4 = Drain (dual-drain design).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with PH2NQ10T,115 and IPB070N10N3 G, the PHT2NQ10T,135 delivers optimal balance of SMT compatibility, thermal performance in constrained spaces, and cost-effectiveness for sub-150 W power conversion - without over-engineering for higher-current or through-hole requirements.

Availability

PHT2NQ10T,135 is available at Aetrix Electronics and suitable for DC-DC converters, high-speed drivers, and general-purpose power switching applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHT2NQ10T,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, with core expertise in automotive, industrial, and power management ICs.

The PHT2NQ10T,135 belongs to NXP's legacy TrenchMOS™ discrete power transistor family, designed specifically for cost-sensitive, space-constrained medium-power switching applications where reliability and thermal performance in SMT packages are critical.

FAQ

What is the maximum continuous drain current rating for PHT2NQ10T,135?

The PHT2NQ10T,135 is rated for 2.5 A continuous drain current (I_D) at solder point temperature (T_sp) = 25 °C and V_GS = 10 V. At T_sp = 100 °C, this derates to 1.6 A. The device's 20 K/W junction-to-solder-point thermal resistance means actual current capability depends heavily on PCB copper area and thermal vias - sustained operation above 1.5 A typically requires metal-clad substrate or thermal pad attachment.

Does PHT2NQ10T,135 have avalanche capability, and how is it specified?

Yes, the PHT2NQ10T,135 is rated for non-repetitive avalanche energy (E_AS) of 32 mJ under defined conditions: unclamped inductive load, I_D = 2.5 A, V_DD ≤15 V, R_GS = 50 Ω, V_GS = 10 V, and starting junction temperature of 25 °C. This specification confirms robustness against transient overvoltage events common in flyback and forward converter primary switches - eliminating need for external clamping in many designs.

What is the gate threshold voltage range for PHT2NQ10T,135, and how does it vary with temperature?

The PHT2NQ10T,135 has a gate-source threshold voltage (V_GS(th)) range of 2 V to 4 V at T_j = 25 °C, with typical value of 3 V. It decreases to 1.2 V at T_j = 150 °C and increases to 6 V at T_j = −55 °C. This negative temperature coefficient ensures inherent current-limiting behavior at high temperatures, improving thermal stability in sustained high-load operation of the PHT2NQ10T,135.

How is the dual-drain configuration implemented in PHT2NQ10T,135's SOT223 package?

The PHT2NQ10T,135 uses Pins 2 and 4 as electrically parallel drain connections, both tied internally to the exposed metal tab. This dual-drain structure reduces effective source inductance and improves high-frequency switching behavior - especially beneficial in hard-switched DC-DC topologies where dI/dt-induced voltage spikes must be minimized. Layout best practice is to connect both drain pins directly to the same large copper pour or heatsink pad.

What is the typical reverse recovery time of the body diode in PHT2NQ10T,135?

The source-drain body diode in the PHT2NQ10T,135 has a typical reverse recovery time (t_rr) of 45 ns under test conditions of I_S = 2.5 A, dI/dt = −100 A/µs, and V_GS = 0 V. Its recovered charge (Q_r) is 90 nC. These values indicate suitability for moderate-frequency synchronous rectification or freewheeling roles, though dedicated Schottky or SiC diodes remain preferred for >200 kHz operation due to lower Q_r.