My Inquiry
My Account
Nexperia USA Inc. PHT4NQ10T,135
- Part No.:
- PHT4NQ10T,135
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
PHT4NQ10T,135.pdf
- Description:
- MOSFET N-CH 100V 3.5A SOT223
- Quantity:
- Payment:
- Shipping:
Inventory:2,663
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PHT4NQ10T,135 from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in SOT223 package, rated for 100 V VDS, 3.5 A continuous drain current at Tsp = 25 °C, and 200 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a primary-side switch in DC-DC converters and high-speed line driver.
For engineers reviewing the PHT4NQ10T,135 datasheet, PHT4NQ10T,135 pinout, PHT4NQ10T,135 application, or PHT4NQ10T,135 equivalent, key selection criteria include its 100 V blocking capability, fast switching (td(on) = 8 ns, tf = 11 ns), avalanche ruggedness (45 mJ), thermal resistance to solder point (18 K/W), and SOT223 surface-mount compatibility with metal-clad substrate cooling.
Technical Context
This device uses TrenchMOS™ technology to achieve low RDS(on) and fast switching with minimal gate charge (Qg(tot) = 7.4 nC). Its gate-source threshold voltage (VGS(th)) ranges from 2–4 V at 25 °C, enabling standard logic-level drive while maintaining robust noise immunity.
The integrated source-drain diode supports synchronous rectification and flyback recovery, with VSD = 0.87–1.5 V at IS = 3.5 A and reverse recovery time trr = 50 ns. Avalanche energy rating (45 mJ) confirms suitability for unclamped inductive switching in non-isolated topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 100 V - Maximum DC drain-source voltage; defines safe operation in 48 V input DC-DC stages with margin. |
| ID (DC) | 3.5 A at Tsp = 25 °C - Continuous current handling with PCB-mounted metal-clad heatsinking. |
| RDS(on) | 200 mΩ max at VGS = 10 V, ID = 1.75 A, Tj = 25 °C - Low conduction loss enabling <1 W dissipation at 2 A. |
| td(on)/tf | 8 ns / 11 ns - Enables >1 MHz switching in hard-switched converters without excessive switching loss. |
| EAS | 45 mJ - Non-repetitive avalanche energy rating supports reliable operation under transient overvoltage or inductive kick. |
| Ciss/Coss | 300 pF / 44 pF - Low input/output capacitance reduces gate drive power and improves EMI behavior. |
| Rth(j-sp) | 18 K/W - Thermal resistance to solder point enables direct thermal coupling to copper pour or metal-core PCB. |
Pinout & Package
Package: SOT223 (SC-73), plastic surface-mount package with exposed drain pad for enhanced thermal transfer to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≤±20 V drive; low Qgs (1.5 nC) enables fast turn-on with modest gate driver current. |
| 2 | Drain (D) | Main power output terminal; electrically connected to exposed metal tab (Pin 4); must be routed to high-voltage node. |
| 3 | Source (S) | Power return and reference for gate drive; tied to ground or low-side switch node; carries full load current. |
| 4 | Drain (D) | Thermal and electrical extension of Pin 2; soldered directly to large copper area for heat dissipation and low-inductance path. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 200 mΩ RDS(on) in SOT223 - delivers higher current density than planar MOSFETs in same footprint. |
| Very fast switching | 8 ns turn-on delay + 11 ns fall time - reduces switching losses in high-frequency DC-DC converters (>500 kHz). |
| Avalanche ruggedness | 45 mJ non-repetitive EAS - eliminates need for external snubbers in inductive load switching applications. |
| Integrated source-drain diode | 50 ns trr, 100 nC Qr - supports efficient freewheeling in buck/boost topologies without discrete diode. |
| SOT223 surface-mount package | 4-pin layout with dual drain terminals - simplifies PCB layout and improves thermal reliability via dual thermal paths. |
Applications
| Primary-Side DC-DC Switch | High-Speed Line Driver |
|---|---|
|
Use Scenario: Primary-side switch in isolated flyback or forward converters for industrial power supplies. IC Role / Device Role / Timing Role: High-voltage, medium-current switching element controlling energy transfer across transformer. Use Value: 100 V VDS rating and 45 mJ avalanche energy ensure robustness against reflected voltage spikes during demagnetization. |
Use Scenario: Driving capacitive transmission lines in PLC, CAN bus stubs, or digital I/O buffers. IC Role / Device Role / Timing Role: Fast edge-rate switch delivering controlled rise/fall times into 50–100 Ω loads. Use Value: 8 ns td(on) and 11 ns tf enable clean 10–20 MHz square-wave signal delivery with minimal overshoot. |
| Fast General-Purpose Switch | Low-Voltage Motor Control |
|
Use Scenario: Solid-state relay replacement or load switching in battery-powered instrumentation. IC Role / Device Role / Timing Role: Low-loss, logic-compatible power switch for 12–48 V loads up to 3 A. Use Value: 2–4 V VGS(th) allows direct drive from microcontroller GPIO; 200 mΩ RDS(on) limits I²R loss to <2 W at 3 A. |
Use Scenario: H-bridge half-bridge leg or PWM-controlled fan/motor driver in embedded systems. IC Role / Device Role / Timing Role: Unidirectional power stage in brushed DC motor control with freewheeling via internal body diode. Use Value: 50 ns trr and 100 nC Qr minimize diode conduction loss and switching noise during PWM commutation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel MOSFET switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP4NK10Z | 100 V, 4 A, RDS(on) = 220 mΩ, TO-92 package, no avalanche rating specified | Larger through-hole footprint; lacks documented EAS spec - less suitable for inductive switching | Prefer when board space permits through-hole mounting and avalanche stress is absent |
| DMN3020LFG-7 | 30 V, 5.8 A, RDS(on) = 30 mΩ, SOT23-3 package, logic-level gate | Lower voltage rating; unsuitable for >40 V rails; optimized for battery-powered logic-level apps | Choose only for sub-30 V systems requiring ultra-low RDS(on) and minimal gate charge |
Compared with STP4NK10Z and DMN3020LFG-7, PHT4NQ10T,135 uniquely balances 100 V capability, SOT223 thermal performance, and verified avalanche ruggedness - making it optimal for compact, high-reliability DC-DC and line-driving designs where voltage margin and transient robustness are critical.
Availability
PHT4NQ10T,135 is available at Aetrix Electronics and suitable for industrial power supplies, PLC interface modules, and embedded motor control systems requiring stable component supply and long-term manufacturability.
Supply support for PHT4NQ10T,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering semiconductor division.
PHT4NQ10T,135 belongs to NXP's legacy TrenchMOS™ power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in space-constrained industrial and telecom power systems.
FAQ
Is PHT4NQ10T,135 suitable for 48 V automotive applications?
No - while rated for 100 V DC, PHT4NQ10T,135 is not AEC-Q101 qualified and lacks automotive-grade screening, temperature cycling validation, or guaranteed operation beyond 150 °C junction. It is intended for industrial and commercial power systems, not automotive environments.
What is the maximum recommended gate resistor for driving PHT4NQ10T,135 at 1 MHz?
Based on Qg(tot) = 7.4 nC and typical gate driver output impedance, a 6 Ω series gate resistor (as used in the datasheet test condition) achieves optimal trade-off between switching speed and ringing suppression at 1 MHz. Values above 15 Ω significantly increase td(off) and switching loss.
Can the source-drain diode be used for synchronous rectification?
No - the internal body diode has 50 ns trr and 100 nC Qr, which cause significant reverse recovery loss in synchronous rectifier configurations. External Schottky or MOSFET-based synchronous rectifiers are required for high-efficiency designs.
Does PHT4NQ10T,135 require a heatsink on standard FR-4 PCB?
Not for continuous 2 A operation: with 200 mΩ RDS(on), power dissipation is ~400 mW. Using the SOT223 drain pad soldered to ≥1 cm² 2-oz copper pour achieves ~45 °C/W effective Rth(j-a), keeping Tj < 100 °C at ambient 60 °C - no external heatsink needed.
PHT4NQ10T,135 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- TrenchMOS™
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 250mOhm @ 1.75A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.4 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 300 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 6.9W (Tc)
- Operating Temperature:
- -65°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
PHT4NQ10T,135 FAQ
1.How can I place an order for PHT4NQ10T,135 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHT4NQ10T,135 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHT4NQ10T,135 reliable?
The price and inventory of PHT4NQ10T,135 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHT4NQ10T,135 is usually 5 days.
3.What payment methods are accepted for PHT4NQ10T,135?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHT4NQ10T,135 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHT4NQ10T,135?
PHT4NQ10T,135 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHT4NQ10T,135 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHT4NQ10T,135?
For technical support, including PHT4NQ10T,135 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHT4NQ10T,135 requirements.
6.How does Aetrix verify that PHT4NQ10T,135 is sourced from the original manufacturer or authorized distributors?
All PHT4NQ10T,135 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHT4NQ10T,135 meets industry standards.
7.What is the process for return or replacement of PHT4NQ10T,135?
All PHT4NQ10T,135 units undergo pre-shipment inspection (PSI). If there is an issue with PHT4NQ10T,135, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHT4NQ10T,135 part is unused and in its original packaging.
Return procedure for PHT4NQ10T,135:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PHT4NQ10T,135 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
