NXP Semiconductors PHT8N06LT,135

Overview

PHT8N06LT,135 from Nexperia is an N-channel logic-level TrenchMOS™ power transistor in SOT223 package, rated for 55 V drain-source voltage, 7.5 A DC drain current (on PCB), and 80 mΩ R_DS(ON) at V_GS = 5 V. It integrates ESD protection via built-in zener diodes and is designed for DC-DC converters and general-purpose switching in industrial and computing power rails.

For engineers reviewing the PHT8N06LT,135 datasheet, PHT8N06LT,135 pinout, PHT8N06LT,135 application, or PHT8N06LT,135 equivalent, key selection criteria include its logic-level gate drive compatibility (V_GS(th) = 1.0–2.0 V), low thermal resistance (R_{th j-sp} = 12–15 K/W), and pulsed current capability (I_DM = 40 A) in surface-mount power switching designs.

Technical Context

The PHT8N06LT,135 employs a trench-gate MOSFET structure optimized for low conduction loss and fast switching. Its static characteristics include a gate threshold voltage of 1.5 V (typical) at 25 °C and a maximum R_DS(ON) of 148 mΩ at 150 °C, ensuring stable operation across automotive-grade temperature ranges.

Dynamic behavior is defined by Q_g(tot) = 11.2 nC, Q_gd = 5 nC, and C_iss = 650 pF (max), supporting efficient gate driving in high-frequency DC-DC topologies. The integrated body diode exhibits t_rr = 38 ns and Q_rr = 0.2 µC, enabling moderate-speed synchronous rectification.

Key Specifications

Pinout & Package

SOT223 surface-mount package with exposed drain tab (Pin 4) for enhanced thermal dissipation and mechanical anchoring. Package dimensions: 6.7 × 3.7 × 1.8 mm (L × W × H), net mass 0.11 g, UL94 V0 compliant epoxy.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IPD25N06S4-135 and DMN3020LFG-7, the PHT8N06LT,135 uniquely balances logic-level compatibility (V_GS(th) ≤ 2.0 V), integrated ESD protection, and SOT223 thermal performance-making it optimal for mid-power industrial DC-DC and load-switching where 3.3 V/5 V drive and reliability are prioritized over ultra-low R_DS(ON).

Availability

PHT8N06LT,135 is available at Aetrix Electronics and suitable for DC-DC converters, industrial load switches, and LED drivers requiring stable component supply with consistent parametric performance across production batches.

Supply support for PHT8N06LT,135 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global leader in discrete, logic, and power MOSFET semiconductors, spun off from NXP's Standard Products division in 2017 and focused on automotive, industrial, computing, and consumer markets.

The PHT8N06LT,135 belongs to Nexperia's TrenchMOS™ logic-level power MOSFET product line, engineered for high-efficiency, low-voltage gate-driven switching in space- and thermally constrained power conversion and load management applications.

FAQ

What is the maximum continuous drain current for PHT8N06LT,135 under standard PCB conditions?

The PHT8N06LT,135 supports 3.5 A continuous drain current when mounted on the reference FR4 PCB per Figure 17 (1.6 mm thick, 35 µm copper). This rating applies at T_amb = 25 °C and drops to 2.2 A at T_amb = 100 °C due to thermal derating. The 7.5 A rating is valid only at T_sp = 25 °C with ideal heat sinking-not typical in real PCB layouts. Always verify thermal design using R_{th j-amb} = 70 K/W.

Does PHT8N06LT,135 require external ESD protection in end equipment?

No, the PHT8N06LT,135 incorporates integral zener diodes providing 2 kV Human Body Model (HBM) ESD protection, as confirmed in the "ESD LIMITING VALUE" section of its datasheet. This eliminates the need for external TVS devices in most industrial and computing applications, though system-level IEC 61000-4-2 compliance may still require board-level protection depending on interface exposure.

Can PHT8N06LT,135 be driven directly by a 3.3 V microcontroller GPIO?

Yes, the PHT8N06LT,135 is a logic-level MOSFET with V_GS(th) ranging from 1.0 V to 2.0 V (typical 1.5 V), ensuring full enhancement at 3.3 V gate drive. At V_GS = 3.3 V, R_DS(ON) remains ≤120 mΩ (based on interpolation of datasheet curves), delivering acceptable conduction loss for ≤2.5 A loads without gate driver assistance.

What is the safe operating area (SOA) limitation for PHT8N06LT,135 in linear mode?

The PHT8N06LT,135 SOA is defined in Figure 3 of its datasheet, showing single-pulse operation up to 7.5 A at V_DS = 10 V (tp = 10 ms) and 2.5 A at V_DS = 40 V (tp = 100 µs). Linear-mode use is restricted by thermal limits: maximum power dissipation on PCB is 1.8 W at 25 °C ambient, and junction temperature must not exceed 150 °C. Derating is mandatory above 25 °C.

How does the body diode performance of PHT8N06LT,135 compare to discrete Schottky diodes?

The PHT8N06LT,135 body diode has V_SD = 0.85–1.1 V at 5 A and t_rr = 38 ns, making it suitable for non-synchronous flyback or buck converters below 500 kHz. While less efficient than a 0.4 V Schottky diode, its integration eliminates component count and layout complexity. For high-frequency or high-efficiency designs, external Schottky or synchronous rectification is recommended.