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NXP Semiconductors PHU101NQ03LT,127
- Part No.:
- PHU101NQ03LT,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
PHU101NQ03LT,127.pdf
- Description:
- MOSFET N-CH 30V 75A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,136
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Product details
Overview
PHU101NQ03LT from NXP Semiconductors is a logic-level N-channel TrenchMOS power MOSFET in SOT533 (IPAK) package, rated for 30 V VDS, 75 A continuous drain current at Tmb = 25 °C, and 4.5–5.5 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters for computing and industrial power supplies.
For engineers reviewing the PHU101NQ03LT datasheet, PHU101NQ03LT pinout, PHU101NQ03LT application, or PHU101NQ03LT equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.5 V), low thermal resistance (Rth(j-mb) = 0.19 K/W), and avalanche ruggedness (EDS(AL)S = 185 mJ), critical for robust switching in high-current, thermally constrained designs.
Technical Context
This device employs TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge (QG(tot) = 23 nC, QGD = 8 nC). Its gate threshold voltage ranges from 0.6 V at 175 °C to 2.9 V at −55 °C, enabling stable turn-on across wide temperature extremes.
The integrated source-drain diode exhibits VSD = 0.85–1.2 V at IS = 25 A and Tj = 25 °C, with trr = 37 ns and Qr = 33 nC - characteristics optimized for synchronous rectification in buck and half-bridge topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum drain-source voltage - supports 24 V input rails with margin for transient spikes in industrial DC-DC stages. |
| RDS(on) | 4.5–5.5 mΩ at VGS = 10 V, Tj = 25 °C - enables <1 W conduction loss at 25 A, reducing heatsink requirements. |
| QG(tot) | 23 nC total gate charge - allows efficient driving from standard logic-level PWM controllers without external gate drivers. |
| Rth(j-mb) | 0.19 K/W junction-to-mounting-base thermal resistance - delivers high power density when mounted on copper PCBs or heatsinks. |
| EDS(AL)S | 185 mJ non-repetitive avalanche energy - provides inherent overvoltage protection during inductive switching events. |
| VGS(th) | 1.0–2.5 V typical gate threshold - ensures reliable turn-on with 3.3 V or 5 V microcontroller GPIO or dedicated gate drivers. |
Pinout & Package
Package: SOT533 (IPAK), plastic single-ended 3-lead in-line package with mounting base electrically connected to drain. Requires solderable copper pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; accepts logic-level voltage (≥2.5 V) to fully enhance channel; low QG minimizes drive power. |
| 2 (D) | Drain | Main high-side or low-side switching node; internally bonded to mounting base for direct thermal path and low-inductance layout. |
| 3 (S) | Source | Reference node for gate drive and current sensing; forms return path for load current and body diode conduction. |
| Mounting base (mb) | Drain connection | Exposed metal pad tied to drain; must be soldered to large copper area for thermal management and EMI control. |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate drive | Operates fully enhanced with VGS ≥ 4.5 V - compatible with 3.3 V/5 V MCU outputs and PWM ICs without level-shifting. |
| Low RDS(on) × QG figure-of-merit | ~115 mΩ·nC - balances conduction and switching losses for high-frequency (≤500 kHz) DC-DC operation. |
| TrenchMOS architecture | Enables uniform current distribution and reduced cell pitch - improves current handling and thermal stability under pulse loads. |
| Avalanche-rated design | Rated for unclamped inductive switching up to 185 mJ - eliminates need for external snubbers in flyback or synchronous buck applications. |
Applications
| Server VRM Power Stage | Industrial 24 V DC-DC Converter |
|---|---|
Use Scenario: High-current, high-efficiency buck converter supplying core voltage to multi-core CPUs in rack-mounted servers. IC Role / Device Role / Timing Role: Synchronous rectifier (low-side switch) operating at 300–500 kHz with precise dead-time control. Use Value: Low RDS(on) and fast tf = 33 ns minimize conduction and switching losses, improving overall VRM efficiency above 92% at full load. |
Use Scenario: Isolated or non-isolated 24 V input to 5/12 V output converter powering PLC I/O modules and sensors. IC Role / Device Role / Timing Role: Primary-side high-side switch in hard-switched forward or active-clamp forward topology. Use Value: Avalanche ruggedness and 175 °C Tj rating ensure reliability in ambient temperatures up to 85 °C with no derating penalties. |
| Telecom PoE+ Midspan Supply | Automotive Body Control Module |
Use Scenario: 48 V input DC-DC stage delivering regulated 12 V/5 V to powered devices in IEEE 802.3at PoE+ infrastructure. IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in LLC resonant converter with zero-voltage switching. Use Value: Low QGD/QG ratio (8/23) reduces Miller-induced shoot-through risk during high-dV/dt transitions. |
Use Scenario: Load switch for 12 V battery-fed actuators (e.g., window lift motors, seat adjusters) in automotive BCMs. IC Role / Device Role / Timing Role: High-side load switch with integrated reverse polarity and overtemperature protection. Use Value: Logic-level gate enables direct drive from 3.3 V CAN/LIN transceiver I/O; VGS(th) stability over −40 to 125 °C ensures cold-cranking reliability. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRL3803PBF | RDS(on) = 6.0 mΩ @ VGS = 10 V; TO-220AB package; higher Rth(j-a) = 62 K/W; no avalanche rating specified. | Limited to lower-power (<50 A) applications due to thermal limitations; unsuitable for high-density PCB layouts requiring low-profile packages. | Choose IRL3803PBF only if TO-220 mechanical fit is required and avalanche stress is absent in system design. |
| STP110N3LLH6 | RDS(on) = 3.3 mΩ @ VGS = 10 V; TO-220FP package; QG(tot) = 42 nC; higher gate drive power needed. | Better conduction loss but slower switching; requires stronger gate driver; not qualified for industrial temperature range (−55 to 175 °C). | Select STP110N3LLH6 only when lowest possible RDS(on) dominates over switching speed and temperature qualification. |
Compared with IRL3803PBF and STP110N3LLH6, PHU101NQ03LT offers superior thermal performance via its low Rth(j-mb), guaranteed avalanche capability, and full industrial temperature qualification - making it optimal for space-constrained, high-reliability DC-DC systems where thermal management and fault tolerance are critical.
Availability
PHU101NQ03LT is available at Aetrix Electronics and suitable for server VRMs, industrial 24 V DC-DC converters, and telecom PoE+ midspan supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.
Supply support for PHU101NQ03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and IoT markets.
The PHU101NQ03LT belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered for high-efficiency, high-current switching in thermally demanding computing and industrial power conversion applications.
FAQ
What is the maximum continuous drain current rating for PHU101NQ03LT?
The PHU101NQ03LT supports a maximum continuous drain current of 75 A at mounting base temperature Tmb = 25 °C and VGS = 10 V. Derating applies above 25 °C per Figure 1 in the datasheet, with usable current dropping to ~40 A at Tmb = 100 °C. This rating assumes proper thermal management via the mounting base.
Does PHU101NQ03LT support logic-level gate drive from a 3.3 V microcontroller?
Yes, PHU101NQ03LT is specifically designed as a logic-level FET with VGS(th) ranging from 1.0 V to 2.5 V at Tj = 25 °C. At VGS = 3.3 V, it achieves partial enhancement sufficient for moderate-current switching; full enhancement (RDS(on) ≤ 7.5 mΩ) occurs at VGS = 5 V, making it compatible with 3.3 V and 5 V logic interfaces.
What is the thermal resistance from junction to mounting base for PHU101NQ03LT?
The PHU101NQ03LT has a maximum thermal resistance of Rth(j-mb) = 0.19 K/W from junction to mounting base, measured under standard test conditions. This low value enables high power dissipation (up to 166 W at Tmb = 25 °C) when the mounting base is soldered to a large copper area or heatsink.
Is PHU101NQ03LT rated for avalanche energy, and what is its value?
Yes, PHU101NQ03LT is avalanche-rated with a non-repetitive drain-source avalanche energy EDS(AL)S of 185 mJ under specified test conditions (VGS = 10 V, Tj(init) = 25 °C, ID = 43 A, Vsup ≤ 15 V, unclamped, tp = 0.19 ms). This rating supports robust operation during inductive switching faults without external snubbers.
What package type does PHU101NQ03LT use, and how is the mounting base connected?
PHU101NQ03LT uses the SOT533 (IPAK) package - a plastic single-ended 3-lead in-line outline with an exposed mounting base. The mounting base is electrically and thermally connected to the drain terminal (Pin 2), requiring direct soldering to a PCB copper pour or heatsink for optimal thermal performance and low-inductance current paths.
PHU101NQ03LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 5.5mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 23 nC @ 5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2180 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 166W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
PHU101NQ03LT,127 FAQ
1.How can I place an order for PHU101NQ03LT,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHU101NQ03LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHU101NQ03LT,127 reliable?
The price and inventory of PHU101NQ03LT,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHU101NQ03LT,127 is usually 5 days.
3.What payment methods are accepted for PHU101NQ03LT,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHU101NQ03LT,127 transactions.
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4.How is shipping managed for PHU101NQ03LT,127?
PHU101NQ03LT,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHU101NQ03LT,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHU101NQ03LT,127?
For technical support, including PHU101NQ03LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHU101NQ03LT,127 requirements.
6.How does Aetrix verify that PHU101NQ03LT,127 is sourced from the original manufacturer or authorized distributors?
All PHU101NQ03LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHU101NQ03LT,127 meets industry standards.
7.What is the process for return or replacement of PHU101NQ03LT,127?
All PHU101NQ03LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHU101NQ03LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHU101NQ03LT,127 part is unused and in its original packaging.
Return procedure for PHU101NQ03LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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