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NXP Semiconductors PHU108NQ03LT,127
- Part No.:
- PHU108NQ03LT,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
PHU108NQ03LT,127.pdf
- Description:
- MOSFET N-CH 25V 75A IPAK
- Quantity:
- Payment:
- Shipping:
Inventory:9,078
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Product details
Overview
PHU108NQ03LT from NXP Semiconductors (formerly Philips Semiconductors) is a logic-level N-channel enhancement-mode MOSFET using TrenchMOS™ technology, designed for high-current switching in low-voltage DC-DC converters and switch-mode power supplies. It delivers 75 A continuous drain current at VGS = 5 V, features 6.7 mΩ typical RDS(on) at 25 °C, and supports 25 V drain-source voltage rating with ±20 V gate-source voltage tolerance.
For engineers reviewing the PHU108NQ03LT datasheet, PHU108NQ03LT pinout, PHU108NQ03LT application, or PHU108NQ03LT equivalent, key selection criteria include its logic-level gate drive compatibility (VGS(th) = 1.0–2.0 V), low Qgd of 5.6 nC for fast switching, and thermal resistance Rth(j-mb) of 0.8 K/W enabling high-power density board designs.
Technical Context
This device operates as a unidirectional power switch in synchronous rectification and primary-side switching topologies. Its TrenchMOS™ structure enables low on-resistance while maintaining robust avalanche ruggedness (180 mJ unclamped) and stable threshold voltage across −55 °C to +175 °C junction temperature range.
The PHU108NQ03LT uses an IPAK (SOT533) package with in-line leads and electrically isolated mounting base connected to drain. Gate drive requires only 4.5 V for full enhancement, and dynamic parameters-including 16.3 nC total gate charge and 38 ns rise time-support efficient operation at frequencies up to several hundred kHz in hard-switched applications.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 25 V maximum - defines safe operating voltage ceiling in 12 V/24 V bus systems |
| ID (DC) | 75 A at Tmb = 25 °C, VGS = 5 V - supports high-current output stages without parallel devices |
| RDS(on) | 6.7 mΩ typ at VGS = 5 V, Tj = 25 °C - minimizes conduction loss in high-efficiency SMPS |
| Qgd | 5.6 nC typ - reduces Miller-induced switching delay and improves gate drive efficiency |
| Rth(j-mb) | 0.8 K/W max - enables direct heatsink mounting for thermal management in compact layouts |
| VGS(th) | 1.0–2.0 V at Tj = 25 °C - ensures reliable turn-on with standard 3.3 V or 5 V logic-level controllers |
| EAS | 180 mJ unclamped avalanche energy - provides robustness against inductive switching transients |
Pinout & Package
PHU108NQ03LT is housed in an IPAK (SOT533) plastic single-ended in-line package with three leads and an isolated mounting base electrically connected to the drain terminal. The package supports through-hole or surface-mount assembly and is optimized for thermal transfer via the metal mounting base.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control input requiring ≤20 V absolute max; low 1.2 Ω gate resistance enables fast charging |
| 2 | Drain (D) | Main power input/output node; internally bonded to mounting base for low-inductance thermal path |
| 3 | Source (S) | Power return reference; forms common node with gate driver ground in low-side configurations |
| Mounting base | Drain (D) | Electrically tied to pin 2; provides mechanical attachment and primary thermal conduction path to heatsink |
Key Features
| Feature | Design Value |
|---|---|
| Logic-level gate threshold | VGS(th) = 1.0–2.0 V enables direct drive from microcontrollers and PWM ICs without level-shifting |
| Ultra-low RDS(on) | 6.7 mΩ at 5 V gate drive reduces I²R losses by >30% vs. comparable 8–10 mΩ MOSFETs in 50 A applications |
| Low gate charge | Qg(tot) = 16.3 nC minimizes gate driver power consumption and allows use of smaller gate resistors |
| Avalanche-rated | 180 mJ unclamped energy rating protects against inductive kickback in relay drivers and motor control |
| Lead-free construction | RoHS-compliant materials and finish support environmentally regulated industrial and automotive production |
Applications
| DC-DC Converter Secondary Side | Switch-Mode Power Supply Primary Switch |
|---|---|
Use Scenario: High-current synchronous rectification in 12 V input, 3.3 V/5 V output buck converters for server VRMs and telecom power modules. IC Role / Device Role / Timing Role: Low-side power switch replacing Schottky diodes to reduce forward voltage drop and improve conversion efficiency above 90%. Use Value: 6.7 mΩ RDS(on) cuts conduction loss by ~65% versus 40 V Schottky diodes, directly increasing full-load efficiency by 1.2–1.8%. |
Use Scenario: Primary-side switching element in 24 V input, 48 V output flyback or forward converters used in industrial PLC power supplies. IC Role / Device Role / Timing Role: High-current, low-RDS(on) switch handling repetitive 75 A peak currents during PWM on-time. Use Value: 0.8 K/W thermal resistance allows direct heatsink mounting without thermal interface pads, reducing thermal stack height by 0.5 mm. |
| Motor Drive Half-Bridge Low-Side | Hot-Swap Controller Load Switch |
Use Scenario: Low-side switch in 24 V brushed DC motor drivers for HVAC actuators and factory automation equipment. IC Role / Device Role / Timing Role: Fast-turning power switch controlling motor winding current with minimal shoot-through risk due to low Qgd. Use Value: 5.6 nC Qgd and 38 ns rise time enable clean 20 kHz PWM edge transitions, suppressing audible motor whine. |
Use Scenario: Inrush current limiting and fault protection switch in 12 V hot-swap backplane cards for network switches and storage enclosures. IC Role / Device Role / Timing Role: Controlled turn-on load switch with integrated avalanche capability to absorb capacitive surge energy. Use Value: 180 mJ EAS withstands repeated 100 A inrush events without degradation, eliminating need for external TVS clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP75NF03L | RDS(on) = 7.5 mΩ @ 5 V; higher Qgd = 8.2 nC; TO-220 package with higher Rth(j-c) | Limited to lower-frequency (<100 kHz) applications due to slower switching; less suitable for compact SMT layouts | Prefer PHU108NQ03LT where board space, thermal performance, or switching speed are critical |
| IRF1404ZLPbF | RDS(on) = 4.0 mΩ @ 10 V but VGS(th) = 2.0–4.0 V; not logic-level compatible at 3.3 V drive | Requires 10 V gate drive for optimal RDS(on); unsuitable for 3.3 V controller interfaces without boost circuitry | Choose PHU108NQ03LT when interfacing directly with 3.3 V or 5 V microcontrollers or PWM ICs |
Compared with STP75NF03L and IRF1404ZLPbF, the PHU108NQ03LT uniquely combines true logic-level operation, ultra-low thermal resistance, and industry-leading Qgd/RDS(on) ratio-making it optimal for space-constrained, high-efficiency, and fast-switching 24 V system designs.
Availability
PHU108NQ03LT is available at Aetrix Electronics and suitable for DC-DC converter secondary side, switch-mode power supply primary switch, motor drive half-bridge low-side, and hot-swap controller load switch applications requiring stable component supply and long-term industrial availability.
Supply support for PHU108NQ03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, with core expertise in automotive, industrial, and power management technologies.
The PHU108NQ03LT belongs to NXP's TrenchMOS™ logic-level power MOSFET family, engineered specifically for high-current, low-voltage switching in energy-efficient power conversion and motor control systems.
FAQ
What is the maximum continuous drain current rating for PHU108NQ03LT?
The PHU108NQ03LT is rated for 75 A continuous drain current at mounting base temperature Tmb = 25 °C and VGS = 5 V. This rating decreases with rising temperature per Figure 2 in the datasheet, reaching 75 A again at Tmb = 100 °C due to derating curves. Actual design current must account for PCB copper area, heatsinking, and ambient conditions to maintain junction temperature below 175 °C.
Does PHU108NQ03LT support 3.3 V logic-level gate drive?
Yes, PHU108NQ03LT supports 3.3 V logic-level gate drive: its gate-source threshold voltage VGS(th) is specified from 1.0 V to 2.0 V at 25 °C, ensuring reliable turn-on with standard 3.3 V microcontroller outputs. At VGS = 3.3 V, RDS(on) increases to ~10.5 mΩ (extrapolated from Figure 6), still enabling functional operation in moderate-current applications.
What is the thermal resistance from junction to mounting base for PHU108NQ03LT?
The PHU108NQ03LT has a maximum thermal resistance Rth(j-mb) of 0.8 K/W from junction to mounting base, as specified in Table 4. This value assumes proper mechanical contact between the isolated mounting base and an external heatsink. Effective thermal performance depends on mounting pressure, thermal interface material, and heatsink fin geometry.
Is PHU108NQ03LT lead-free and RoHS compliant?
Yes, PHU108NQ03LT is lead-free and RoHS compliant, as explicitly stated in the "Features" section of the datasheet. Its construction meets Directive 2011/65/EU requirements, including restrictions on lead, mercury, cadmium, hexavalent chromium, PBB, and PBDE. The device carries appropriate marking and documentation for compliance verification.
Can PHU108NQ03LT be used in avalanche mode?
Yes, PHU108NQ03LT is rated for non-repetitive unclamped inductive switching with EAS = 180 mJ at ID = 43 A, VDD ≤25 V, and starting Tj = 25 °C. This avalanche ruggedness supports reliable operation in circuits with inductive loads such as relays, solenoids, and motor windings-provided single-event energy remains within this limit and junction temperature stays within −55 °C to +175 °C.
PHU108NQ03LT,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 25 V
- Current - Continuous Drain (Id) @ 25°C:
- 75A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 5V, 10V
- Rds On (Max) @ Id, Vgs:
- 6mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id:
- 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 16.3 nC @ 4.5 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1375 pF @ 12 V
- FET Feature:
- -
- Power Dissipation (Max):
- 187W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- IPAK
PHU108NQ03LT,127 FAQ
1.How can I place an order for PHU108NQ03LT,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHU108NQ03LT,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHU108NQ03LT,127 reliable?
The price and inventory of PHU108NQ03LT,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHU108NQ03LT,127 is usually 5 days.
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Once your PHU108NQ03LT,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHU108NQ03LT,127?
For technical support, including PHU108NQ03LT,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHU108NQ03LT,127 requirements.
6.How does Aetrix verify that PHU108NQ03LT,127 is sourced from the original manufacturer or authorized distributors?
All PHU108NQ03LT,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHU108NQ03LT,127 meets industry standards.
7.What is the process for return or replacement of PHU108NQ03LT,127?
All PHU108NQ03LT,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHU108NQ03LT,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHU108NQ03LT,127 part is unused and in its original packaging.
Return procedure for PHU108NQ03LT,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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