NXP Semiconductors PHU78NQ03LT,127

Overview

PHU78NQ03LT from NXP Semiconductors is a logic-level N-channel TrenchMOS power MOSFET in IPAK (SOT533) package, rated for 25 V V_DS, 75 A continuous drain current at T_mb = 25 °C, and 7.65 mΩ R_DS(on) at V_GS = 10 V and T_j = 25 °C. It serves as a high-efficiency synchronous rectifier or main switch in DC-DC converters and motherboard VRMs.

For engineers reviewing the PHU78NQ03LT datasheet, PHU78NQ03LT pinout, PHU78NQ03LT application, or PHU78NQ03LT equivalent, key selection criteria include logic-level gate drive compatibility (V_GS(th) = 1–2 V), low R_DS(on) at 5 V gate drive, fast switching (t_r = 46 ns, Q_GD = 4 nC), thermal resistance R_th(j-mb) = 1.4 K/W, and avalanche energy rating of 100 mJ.

Technical Context

This device employs TrenchMOS technology to achieve low on-resistance and fast switching with minimal gate charge. Its gate threshold voltage ranges from 0.5 V at 175 °C to 2.2 V at −55 °C, enabling stable operation across industrial temperature extremes.

The IPAK package features an exposed mounting base electrically connected to the drain, providing direct thermal path to heatsink and supporting high-power dissipation up to 107 W at T_mb = 25 °C. The source-drain diode exhibits V_SD = 0.78 V at 25 A and t_rr = 35 ns, suitable for freewheeling in buck topologies.

Key Specifications

Pinout & Package

PHU78NQ03LT uses the IPAK (SOT533) plastic single-ended package with three in-line leads and an exposed metal mounting base electrically tied to the drain terminal. Thermal performance relies on mechanical mounting of the base to an external heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel logic-level MOSFET applications.

Compared with IRL3803PBF and STP75NF75, PHU78NQ03LT offers the lowest thermal resistance (1.4 K/W), smallest logic-compatible footprint (IPAK), and best balance of R_DS(on), Q_GD, and avalanche ruggedness for high-density, high-frequency DC-DC applications.

Availability

PHU78NQ03LT is available at Aetrix Electronics and suitable for computer motherboard VRMs, point-of-load DC-DC converters, and industrial motor control drivers requiring stable component supply, long-term lifecycle assurance, and traceable sourcing.

Supply support for PHU78NQ03LT includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company headquartered in Eindhoven, Netherlands, specializing in secure connectivity solutions for automotive, industrial, and consumer markets.

PHU78NQ03LT belongs to NXP's TrenchMOS logic-level power MOSFET product line, engineered for high-efficiency, high-current switching in space-constrained computing and industrial power supplies where thermal performance and gate-drive simplicity are critical.

FAQ

What is the maximum continuous drain current rating for PHU78NQ03LT?

The PHU78NQ03LT supports a maximum continuous drain current of 75 A at mounting base temperature T_mb = 25 °C and V_GS = 10 V. At elevated temperatures, derating applies: 57.5 A at T_mb = 100 °C and V_GS = 10 V. This rating assumes proper heatsinking via the exposed mounting base, which is electrically connected to the drain.

Does PHU78NQ03LT support true logic-level gate drive at 3.3 V?

Yes, PHU78NQ03LT is specifically designed as a logic-level FET with V_GS(th) ranging from 1.0 V to 2.0 V at 25 °C, and as low as 0.5 V at 175 °C. At V_GS = 3.3 V and T_j = 25 °C, R_DS(on) is typically 13.5 mΩ - sufficiently low for many 3.3 V-driven applications such as motherboard VRMs and PoL converters.

What is the thermal resistance from junction to mounting base for PHU78NQ03LT?

The PHU78NQ03LT has a maximum thermal resistance R_th(j-mb) of 1.4 K/W, measured from junction to the exposed mounting base. This value enables efficient heat transfer when the base is mounted to a heatsink with appropriate thermal interface material, making it suitable for high-power-density applications where traditional TO-220 thermal performance is insufficient.

Can PHU78NQ03LT be used in avalanche conditions?

Yes, PHU78NQ03LT is rated for non-repetitive drain-source avalanche energy E_DS(AL)S = 100 mJ under defined test conditions (V_GS = 10 V, I_D = 32 A, unclamped, t_p = 0.17 ms). This ruggedness supports reliability in inductive switching applications like motor drives and DC-DC converters subject to voltage overshoot during turn-off.

What package type does PHU78NQ03LT use, and how is the mounting base connected?

PHU78NQ03LT uses the IPAK (SOT533) package - a plastic single-ended 3-lead in-line outline with an exposed metal mounting base. Per the pinning information, the mounting base is electrically connected to Pin 2 (Drain), enabling simultaneous thermal and electrical integration into heatsink-mounted PCB layouts without additional isolation hardware.