NXP Semiconductors PHW80NQ10T,127

Overview

PHW80NQ10T from NXP (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power MOSFET in TO-247 (SOT429) package, rated for 100 V V_DSS, 80 A continuous drain current at T_mb = 25 °C, and R_DS(ON) ≤ 15 mΩ at V_GS = 10 V. It serves as a high-current switching element in primary-side power conversion stages of industrial SMPS and DC-DC converters.

For engineers reviewing the PHW80NQ10T datasheet, PHW80NQ10T pinout, PHW80NQ10T application, or PHW80NQ10T equivalent, key selection criteria include its low thermal resistance (R_{th j-mb} = 0.57 K/W), unclamped avalanche energy rating (E_AS = 481 mJ), and fast switching performance with Q_g(tot) = 109 nC and t_f = 95 ns under specified conditions.

Technical Context

This device employs trench-gate silicon technology to achieve low on-resistance and high current density. Its gate threshold voltage (V_GS(TO)) ranges from 2.0 V to 4.0 V at 25 °C and drops to 1.0 V at 175 °C, enabling robust turn-on across temperature extremes.

The integrated body diode supports synchronous rectification and freewheeling functions, with V_SD = 0.8–1.2 V at I_F = 25 A and t_rr = 90 ns under defined dI_F/dt and voltage conditions - critical for minimizing switching losses in hard-switched topologies.

Key Specifications

Pinout & Package

PHW80NQ10T is housed in the SOT429 (TO-247) plastic through-hole package with isolated leads and metal tab connected to drain (pin 2). The package features a single mounting hole and is optimized for heatsink attachment via the drain-connected tab.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel 100 V power MOSFET applications.

Compared with STP80NF10 and IRFP460LC, PHW80NQ10T delivers the best combination of low R_DS(ON), high avalanche energy, and thermal performance in the 100 V class - making it preferred for high-density, high-reliability industrial and server power supplies where thermal headroom and transient robustness are design constraints.

Availability

PHW80NQ10T is available at Aetrix Electronics and suitable for industrial SMPS, server power supplies, and motor drive inverters requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.

Supply support for PHW80NQ10T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips' pioneering analog and power device development.

The PHW80NQ10T belongs to NXP's TrenchMOS™ power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial and computing power conversion systems where low R_DS(ON), thermal performance, and avalanche ruggedness are critical.

FAQ

What is the maximum continuous drain current rating for PHW80NQ10T at 100 °C mounting base temperature?

The PHW80NQ10T supports 57 A continuous drain current at T_mb = 100 °C, as specified in the Limiting Values table. This derating reflects thermal constraints of the TO-247 package and must be applied when heatsink temperature exceeds 25 °C - ensuring safe operation within the 175 °C maximum junction temperature limit.

Does PHW80NQ10T have a fully rated avalanche capability, and what is its EAS value?

Yes, PHW80NQ10T is characterized for non-repetitive avalanche with E_AS = 481 mJ under defined test conditions (IAS = 74 A, tp = 100 µs, VDD ≤ 50 V, VGS = 10 V). This rating is measured per IEC 134 and confirms ruggedness for inductive switching transients - a key differentiator versus non-avalanche-rated MOSFETs.

What is the gate threshold voltage range of PHW80NQ10T, and how does it vary with temperature?

The PHW80NQ10T has a gate threshold voltage V_GS(TO) of 2.0–4.0 V at T_j = 25 °C, and it decreases to 1.0 V (min) at T_j = 175 °C. This negative temperature coefficient ensures stable turn-on behavior across wide operating temperatures, reducing risk of thermal runaway in parallel configurations.

Can PHW80NQ10T be used in synchronous rectification applications, and what are its body diode characteristics?

Yes, PHW80NQ10T integrates a fast body diode with V_SD = 0.8–1.2 V at I_F = 25 A and t_rr = 90 ns. These parameters make it suitable for synchronous rectification in LLC and flyback converters where low forward drop and fast recovery minimize conduction and switching losses.

What is the thermal resistance from junction to mounting base (R_{th j-mb}) for PHW80NQ10T, and why is it important?

The PHW80NQ10T has a maximum R_{th j-mb} of 0.57 K/W, measured from junction to the drain-connected mounting base. This low value is critical because it directly determines how efficiently heat transfers from the silicon die to the heatsink - enabling higher power dissipation (up to 263 W at T_mb = 25 °C) without exceeding T_j(max) = 175 °C.