My Inquiry
My Account
NXP Semiconductors PHX18NQ11T,127
- Part No.:
- PHX18NQ11T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
PHX18NQ11T,127.pdf
- Description:
- MOSFET N-CH 110V 12.5A TO220F
- Quantity:
- Payment:
- Shipping:
Inventory:7,386
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PHX18NQ11T,127 from NXP Semiconductors (formerly Philips Semiconductors) is a standard-level N-channel TrenchMOS™ power MOSFET in an isolated TO-220F (SOT186A) package, rated for 110 V VDS, 12.5 A ID at TH = 25 °C, and 90 mΩ RDS(on) at VGS = 10 V and Tj = 25 °C. It delivers fast switching, low thermal resistance (Rth(j-h) = 4 K/W), and 2500 VRMS isolation between terminals and heatsink - used in DC-DC converters, SMPS primary-side switches, and Class-D amplifier output stages.
For engineers reviewing the PHX18NQ11T,127 datasheet, PHX18NQ11T,127 pinout, PHX18NQ11T,127 application, or PHX18NQ11T,127 equivalent, key selection criteria include its isolated mounting base, avalanche ruggedness (56 mJ unclamped), gate charge (21 nC total), and thermal performance under heatsink-cooled operation.
Technical Context
This device operates as a standard-level (VGS(th) = 2–4 V) enhancement-mode MOSFET with trench-gate architecture optimized for high-current, medium-voltage switching. Its isolated TO-220F package enables direct heatsink mounting without insulating hardware while maintaining 2500 VRMS isolation between drain/source/gate and heatsink.
Dynamic behavior is defined by Qg(tot) = 21 nC, Qgd = 8 nC, and Ciss = 635 pF at VDS = 25 V, supporting efficient hard-switching up to several hundred kHz. The source-drain diode exhibits VSD = 0.87–1.2 V at IS = 12 A and trr = 55 ns, enabling synchronous rectification or freewheeling in non-isolated topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 110 V - Maximum continuous drain-source blocking voltage; supports 90 V bus designs with 20 % margin. |
| ID (DC) | 12.5 A at TH = 25 °C - Continuous current capability with external heatsink; derates to 7.9 A at TH = 100 °C. |
| RDS(on) | 67–90 mΩ at VGS = 10 V - On-resistance range defines conduction loss in high-efficiency power stages. |
| Ptot | 31.2 W at TH = 25 °C - Total power dissipation limit under heatsink-cooled conditions. |
| Rth(j-h) | 4 K/W - Junction-to-heatsink thermal resistance enables compact thermal design with minimal heatsink mass. |
| VisolRMS | 2500 V - RMS isolation voltage from all three terminals to external heatsink; eliminates need for insulating pads. |
| EDS(AL)S | 56 mJ - Non-repetitive unclamped inductive avalanche energy; supports robust operation during transient overloads. |
Pinout & Package
PHX18NQ11T,127 uses the SOT186A package - a 3-lead, plastic single-ended TO-220F variant with fully isolated mounting base (mb) for direct heatsink attachment. The package includes one mounting hole and conforms to JEDEC TO-220 'full pack' mechanical standards.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (G) | Gate | Control terminal; requires 10 V drive for full enhancement; threshold voltage 2–4 V at 25 °C. |
| 2 (D) | Drain | Main high-side switching node; electrically isolated from mounting base per 2500 VRMS rating. |
| 3 (S) | Source | Power return path and reference for gate drive; tied to source-drain body diode cathode. |
| Mounting base (mb) | Isolated thermal interface | Electrically isolated heatsink contact surface; enables safe, low-thermal-resistance cooling without insulation hardware. |
Key Features
| Feature | Design Value |
|---|---|
| Isolated mounting base | Enables direct heatsink mounting with 2500 VRMS isolation - eliminates insulating washers and thermal interface complexity. |
| TrenchMOS™ technology | Delivers 67 mΩ typical RDS(on) at 10 V drive, reducing conduction losses in high-current DC-DC and SMPS stages. |
| Low thermal resistance | Rth(j-h) = 4 K/W allows >7 W dissipation with ≤28 °C temperature rise across junction-to-heatsink path. |
| Avalanche ruggedness | 56 mJ unclamped inductive avalanche energy supports reliable operation during load dump or inductive kick events. |
| Fast switching | td(on) = 6 ns, tr = 12 ns, td(off) = 20 ns, tf = 10 ns - enables high-frequency operation with minimized switching loss. |
Applications
| DC-DC Converters | Switched-Mode Power Supplies |
|---|---|
|
Use Scenario: Primary-side switch in isolated flyback or forward converters operating at 100–300 kHz with 24–48 V input. IC Role / Device Role / Timing Role: High-side power switch controlling energy transfer into transformer primary winding. Use Value: Isolated mounting base simplifies heatsinking in compact enclosures; 90 mΩ RDS(on) reduces conduction loss at 10 A load current. |
Use Scenario: Main switching transistor in industrial AC-DC power supplies delivering 100–300 W output. IC Role / Device Role / Timing Role: Active switch in PFC boost stage or main PWM output stage. Use Value: 110 V VDS rating accommodates 100 V peak line transients; 56 mJ avalanche energy prevents failure during surge events. |
| Class-D Audio Amplifiers | Motor Drive Half-Bridge Stages |
|
Use Scenario: Output half-bridge switch in 50–200 W audio amplifiers with PWM carrier frequencies above 300 kHz. IC Role / Device Role / Timing Role: High-speed switching element in complementary output stage driving loudspeaker load. Use Value: Low Qgd/Qg ratio (8/21 nC) minimizes Miller-induced shoot-through risk; fast tf = 10 ns ensures clean waveform edges. |
Use Scenario: Low-side switch in 24–48 V brushed DC motor control modules with PWM frequency up to 20 kHz. IC Role / Device Role / Timing Role: Ground-referenced power switch enabling bidirectional current flow via H-bridge configuration. Use Value: Source-drain diode with trr = 55 ns and Qr = 135 nC supports efficient freewheeling; 12.5 A ID sustains 15 A peak motor stall current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP12NK110Z | 1100 V VDS, 12 A ID, 0.7 Ω RDS(on), TO-220 package without isolation | Higher voltage rating but significantly higher on-resistance; no integrated isolation - requires separate insulator | Choose STP12NK110Z only when >110 V blocking is required; not suitable for isolated heatsink mounting without redesign. |
| IRFZ44NPBF | 55 V VDS, 49 A ID, 28 mΩ RDS(on), TO-220 package without isolation | Lower voltage rating, higher current, lower RDS(on); lacks isolation and avalanche rating | IRFZ44NPBF fits 24–36 V systems needing higher current density but cannot replace PHX18NQ11T,127 in 48–100 V isolated designs. |
Compared with STP12NK110Z and IRFZ44NPBF, PHX18NQ11T,127 uniquely combines 110 V rating, sub-100 mΩ on-resistance, 2500 VRMS isolation, and 56 mJ avalanche capability in a single TO-220F package - making it irreplaceable in space-constrained, heatsink-integrated 48–100 V power stages where safety and reliability are critical.
Availability
PHX18NQ11T,127 is available at Aetrix Electronics and suitable for DC-DC converters, switched-mode power supplies, and Class-D amplifiers requiring stable component supply, long-term lifecycle support, and traceable sourcing from authorized channels.
Supply support for PHX18NQ11T,127 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader specializing in high-performance analog, logic, and power management solutions, with roots in Philips Semiconductors' legacy power device portfolio.
The PHX18NQ11T,127 belongs to NXP's TrenchMOS™ standard-level power MOSFET family, engineered for cost-sensitive, high-reliability industrial and consumer power conversion where isolated thermal management and avalanche robustness are essential.
FAQ
What is the maximum continuous drain current for PHX18NQ11T,127 at 100 °C heatsink temperature?
The PHX18NQ11T,127 supports 7.9 A continuous drain current (ID) at TH = 100 °C with VGS = 10 V, as specified in Table 3 of the datasheet. This derating reflects thermal limits under real-world heatsink-cooled operation and must be verified against actual board layout and airflow conditions before final design sign-off. PHX18NQ11T,127 maintains safe operation within its SOA envelope up to this point.
Does PHX18NQ11T,127 require an insulating pad when mounted to a heatsink?
No - PHX18NQ11T,127 features a fully isolated mounting base rated for 2500 VRMS isolation between all three terminals (gate, drain, source) and the heatsink. This eliminates the need for mica or silicone insulating pads, reducing thermal interface resistance and assembly complexity. PHX18NQ11T,127 achieves Rth(j-h) = 4 K/W directly through the isolated base.
What is the gate threshold voltage range for PHX18NQ11T,127 across temperature?
The gate-source threshold voltage (VGS(th)) of PHX18NQ11T,127 ranges from 1.2 V (min) at Tj = 150 °C to 4.4 V (max) at Tj = −55 °C, with a typical 2–4 V span at 25 °C. This standard-level characteristic means PHX18NQ11T,127 is compatible with 10 V gate drivers but not with 5 V logic-level controllers without level shifting.
Can PHX18NQ11T,127 be used in avalanche mode repeatedly?
No - PHX18NQ11T,127 is rated for non-repetitive drain-source avalanche energy (EDS(AL)S) of 56 mJ under defined test conditions (ID = 7.5 A, tp = 0.09 ms). This rating supports single-event robustness during transients like inductive turn-off spikes, but repeated avalanche operation will degrade reliability. PHX18NQ11T,127 is not designed for repetitive avalanche switching.
What is the source-drain diode forward voltage of PHX18NQ11T,127 at 12 A?
The source-drain (body) diode forward voltage (VSD) of PHX18NQ11T,127 is 0.87–1.2 V at IS = 12 A and VGS = 0 V, per Table 5. This low VSD enables efficient freewheeling in buck or half-bridge topologies, and the 55 ns reverse recovery time (trr) minimizes switching loss during commutation. PHX18NQ11T,127's diode performance is integral to its use in synchronous and quasi-resonant designs.
PHX18NQ11T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 110 V
- Current - Continuous Drain (Id) @ 25°C:
- 12.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 90mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 21 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 635 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 31.2W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
PHX18NQ11T,127 FAQ
1.How can I place an order for PHX18NQ11T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHX18NQ11T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHX18NQ11T,127 reliable?
The price and inventory of PHX18NQ11T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHX18NQ11T,127 is usually 5 days.
3.What payment methods are accepted for PHX18NQ11T,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHX18NQ11T,127 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PHX18NQ11T,127?
PHX18NQ11T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHX18NQ11T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHX18NQ11T,127?
For technical support, including PHX18NQ11T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHX18NQ11T,127 requirements.
6.How does Aetrix verify that PHX18NQ11T,127 is sourced from the original manufacturer or authorized distributors?
All PHX18NQ11T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHX18NQ11T,127 meets industry standards.
7.What is the process for return or replacement of PHX18NQ11T,127?
All PHX18NQ11T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHX18NQ11T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHX18NQ11T,127 part is unused and in its original packaging.
Return procedure for PHX18NQ11T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PHX18NQ11T,127 Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
