NXP Semiconductors PHX23NQ10T,127

Overview

PHX23NQ10T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS™ power transistor in SOT186A (FPAK) package, rated for 100 V drain-source voltage, 13 A continuous drain current at 25 °C, and ≤70 mΩ R_DS(ON) at V_GS = 10 V. It serves as a high-efficiency switching element in d.c.-to-d.c. converters and switched-mode power supplies.

For engineers reviewing the PHX23NQ10T datasheet, PHX23NQ10T pinout, PHX23NQ10T application, or PHX23NQ10T equivalent, this page delivers verified electrical parameters, thermal resistance values, avalanche energy rating (93 mJ), gate charge profile (22 nC total), and isolation specifications critical for power stage design and heatsink-mounting layout validation.

Technical Context

The PHX23NQ10T employs trench-gate MOSFET architecture to achieve low conduction loss and fast switching with 8 ns turn-on delay and 24 ns turn-off fall time under resistive load conditions. Its isolated heatsink mounting base enables direct thermal coupling while maintaining 2500 V_RMS isolation between terminals and heatsink.

It features a robust body diode with 11 A forward current capability, 0.9–1.2 V forward voltage, and 64 ns reverse recovery time-enabling synchronous rectification and freewheeling operation in hard-switched topologies without external diodes.

Key Specifications

Pinout & Package

SOT186A (FPAK) is a plastic single-ended package with electrically isolated heatsink mounting base, 3 leads, and TO-220-compatible footprint. Mounting hole allows mechanical fixation and thermal interface to external heatsink.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP14NK10Z and IRF540NPBF, the PHX23NQ10T uniquely combines isolated heatsink mounting, guaranteed avalanche energy, and optimized gate charge for space-constrained, thermally demanding SMPS designs-making it preferable where reliability under fault conditions and simplified thermal assembly are prioritized over raw current rating.

Availability

PHX23NQ10T is available at Aetrix Electronics and suitable for d.c.-to-d.c. converters, switched-mode power supplies, and TV/computer monitor power supplies requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for PHX23NQ10T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips' semiconductor division, specializing in high-performance analog, logic, and power devices for industrial and automotive markets.

The PHX23NQ10T belongs to NXP's TrenchMOS™ power transistor family, engineered for high-efficiency, high-reliability switching in compact, heatsink-mounted power conversion systems.

FAQ

What is the maximum continuous drain current rating for the PHX23NQ10T?

The PHX23NQ10T supports 13 A continuous drain current at mounting base temperature (T_mb) of 25 °C and V_GS = 10 V. At T_mb = 100 °C, the rating reduces to 8 A due to thermal derating. This specification is defined in the Limiting Values table and confirmed in Fig.2 of the official datasheet. The PHX23NQ10T must be mounted on a heatsink to sustain these currents reliably.

Does the PHX23NQ10T have an electrically isolated package?

Yes, the PHX23NQ10T uses the SOT186A (FPAK) package with an electrically isolated mounting base. It is rated for 2500 V_RMS isolation between all three terminals and the heatsink, as specified in the Isolation Limiting Value section. This eliminates the need for insulating pads in most applications, and the PHX23NQ10T can be directly bolted to a grounded heatsink.

What is the typical gate charge of the PHX23NQ10T and how does it affect driver selection?

The PHX23NQ10T has a total gate charge (Q_g(tot)) of 22 nC (typical) at V_DD = 80 V and V_GS = 10 V. This value determines the required gate driver current: for 500 kHz switching, average gate drive power is ~110 µW. A driver capable of sourcing/sinking ≥1 A peak is recommended to achieve fast 8 ns t_d(on) and 24 ns t_f, as documented for the PHX23NQ10T.

Can the PHX23NQ10T be used in avalanche mode, and what is its rated energy?

Yes, the PHX23NQ10T is fully rated for single-pulse avalanche operation with E_AS = 93 mJ (minimum) under unclamped inductive load conditions (IAS = 23 A, tp = 100 µs, V_DD ≤ 25 V). This is explicitly specified in the Avalanche Energy Limiting Values table and validated in Fig.15. Designers may rely on this rating for fault-tolerant power stage design without external clamping circuits.

What are the key thermal resistance values for the PHX23NQ10T and how do they impact heatsink design?

The PHX23NQ10T specifies R_{th j-mb} = 4.6 K/W (max) from junction to mounting base and R_{th j-a} = 55 K/W (typ) in free air. Since the isolated case serves as the primary thermal path, heatsink design must target R_{th mb-sink} ≤ 1.0 K/W to maintain T_j < 150 °C at 27 W dissipation. These values are measured per IEC 134 and apply directly to the PHX23NQ10T in its intended FPAK mounting configuration.