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NXP Semiconductors PHX23NQ11T,127
- Part No.:
- PHX23NQ11T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
PHX23NQ11T,127.pdf
- Description:
- MOSFET N-CH 110V 16A TO220F
- Quantity:
- Payment:
- Shipping:
Inventory:3,452
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Product details
Overview
PHX23NQ11T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in a fully isolated TO-220F (SOT186A) package, designed for high-efficiency switching in DC-to-DC converters and switched-mode power supplies. It delivers VDS = 110 V, RDS(on) ≤ 70 mΩ at VGS = 10 V and Tj = 25 °C, ID = 16 A continuous, and features 2500 VRMS isolation between terminals and heatsink.
For engineers reviewing the PHX23NQ11T datasheet, PHX23NQ11T pinout, PHX23NQ11T application, or PHX23NQ11T equivalent, this device is selected for isolated high-current switching where thermal robustness, avalanche energy rating (93 mJ), and gate drive compatibility with standard 10 V logic are critical design requirements.
Technical Context
The PHX23NQ11T employs TrenchMOS™ technology to achieve low on-resistance and fast switching dynamics, with Qg(tot) = 22 nC and tr/tf = 39 ns/24 ns under specified test conditions. Its isolated mounting base enables direct heatsink attachment without electrical coupling to drain potential.
It operates as a standard-level gate-drive MOSFET requiring VGS(th) = 2–4 V and supports ±20 V gate-source voltage. The integrated source-drain diode exhibits VSD = 0.9–1.5 V at IS = 11 A and trr = 64 ns, supporting synchronous rectification and flyback recovery.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 110 V - Maximum drain-source blocking voltage; suitable for 48 V input SMPS and 100 V bus applications. |
| RDS(on) | 49–70 mΩ @ VGS = 10 V, Tj = 25 °C - Enables low conduction loss at 16 A DC, reducing thermal load in high-current paths. |
| ID (DC) | 16 A @ Th = 25 °C - Supports sustained current delivery in power stages with external heatsink. |
| Ptot | 41.6 W @ Th = 25 °C - Total dissipation capability with Rth(j-h) ≤ 3 K/W, enabling compact thermal design. |
| VISOL | 2500 VRMS - Full galvanic isolation between all three terminals and heatsink; eliminates need for insulating pads in grounded-heatsink layouts. |
| EDS(AL)S | 93 mJ - Non-repetitive unclamped avalanche energy; provides robustness against inductive switching transients. |
| Qg(tot) | 22 nC - Total gate charge determines driver strength requirement; compatible with medium-power gate drivers (e.g., TC442x). |
Pinout & Package
PHX23NQ11T uses the SOT186A (TO-220F) plastic single-ended package with isolated mounting base. The heatsink-connected metal tab is electrically isolated from all leads and rated for 2500 VRMS isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires 10 V drive for full enhancement; threshold voltage 2–4 V ensures reliable turn-on with standard logic. |
| 2 | Drain (D) | High-side switch node; connected to power rail; isolated from heatsink, enabling floating drain configurations. |
| 3 | Source (S) | Power return path; referenced to control ground; source-drain diode supports freewheeling in buck/flyback topologies. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables 49 mΩ RDS(on) at 10 V gate drive, improving efficiency over planar MOSFETs in 10–20 A power stages. |
| Fully isolated mounting base | Eliminates need for mica washers or silicone pads; simplifies mechanical assembly and improves thermal reliability in grounded-chassis systems. |
| 2500 VRMS isolation rating | Permits direct heatsink mounting in Class I safety designs without additional creepage/clearance barriers. |
| 93 mJ avalanche energy | Withstands unclamped inductive turn-off events up to 14 A, enhancing ruggedness in motor drive and relay-switching applications. |
| Low Qgd/Qgs ratio | 10 nC Miller charge vs. 5 nC gate-source charge reduces risk of false turn-on during high dV/dt commutation. |
Applications
| Industrial DC-DC Converters | Isolated AC-DC Power Supplies |
|---|---|
Use Scenario: 48 V to 12 V step-down converter in programmable logic controller (PLC) backplane power. IC Role / Device Role / Timing Role: Primary-side high-side switch in synchronous buck topology operating at 200 kHz. Use Value: 70 mΩ RDS(on) minimizes conduction loss at 15 A load; isolated tab allows direct chassis-mount heatsinking without insulation layers. |
Use Scenario: Secondary-side synchronous rectifier in 300 W telecom AC-DC front-end with active clamp forward topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode to reduce forward drop and improve efficiency. Use Value: VSD = 0.9 V and trr = 64 ns enable faster recovery than discrete diodes, lowering switching losses by ~15% at 100 kHz. |
| Motor Drive Half-Bridge Stages | Uninterruptible Power Supply (UPS) Inverters |
Use Scenario: High-side switch in 24 V BLDC motor gate driver module for HVAC fan control. IC Role / Device Role / Timing Role: Upper-leg switch in three-phase half-bridge; driven by bootstrap gate driver. Use Value: 110 V VDS rating accommodates 40 V bus spikes; 93 mJ avalanche rating protects against inductive kickback during fault conditions. |
Use Scenario: Output stage switch in 1 kVA online UPS inverter delivering 230 VAC from 380 VDC bus. IC Role / Device Role / Timing Role: Low-side switching element in H-bridge output stage operating at 16 kHz PWM. Use Value: 41.6 W Ptot and Rth(j-h) ≤ 3 K/W support 12 A RMS current with passive heatsink, reducing thermal subsystem cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP16NF10 | VDS = 100 V, RDS(on) = 80 mΩ, non-isolated TO-220 package, no heatsink isolation rating. | Lacks 2500 VRMS isolation; requires insulating hardware for grounded heatsinks. | Select when isolation is not required and lower cost is prioritized over thermal integration simplicity. |
| IRFZ44NPBF | VDS = 55 V, RDS(on) = 28 mΩ, non-isolated TO-220, higher ID (49 A) but lower voltage rating. | Not suitable for >60 V bus applications; insufficient VDS margin for 48 V systems with transients. | Choose only for 24 V or lower DC systems where ultra-low RDS(on) outweighs voltage and isolation needs. |
Compared with STP16NF10 and IRFZ44NPBF, the PHX23NQ11T uniquely combines 110 V rating, 70 mΩ on-resistance, and certified 2500 VRMS isolation-enabling simplified thermal management and enhanced safety compliance in industrial power conversion without layout or BOM changes for isolation hardware.
Availability
PHX23NQ11T is available at Aetrix Electronics and suitable for industrial DC-DC converters, isolated AC-DC power supplies, and motor drive half-bridge stages requiring stable component supply and long-term lifecycle continuity.
Supply support for PHX23NQ11T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications.
The PHX23NQ11T belongs to NXP's legacy TrenchMOS™ power MOSFET family, engineered for high-reliability industrial power conversion where isolation, avalanche ruggedness, and thermal stability are primary design constraints.
FAQ
What is the maximum continuous drain current rating for PHX23NQ11T?
The PHX23NQ11T supports 16 A continuous drain current at heatsink temperature Th = 25 °C with VGS = 10 V. At Th = 100 °C, the derated current is 10.1 A. This rating assumes use of an external heatsink connected to the isolated mounting base, as specified in the limiting values table.
Does PHX23NQ11T require a thermal pad or insulator when mounted to a heatsink?
No - the PHX23NQ11T features a fully isolated mounting base rated for 2500 VRMS isolation. It can be directly bolted to a grounded heatsink without mica washers, silicone pads, or other insulating hardware, simplifying mechanical assembly and improving thermal contact reliability.
What is the gate-source threshold voltage range for PHX23NQ11T?
The PHX23NQ11T has a gate-source threshold voltage VGS(th) of 2–4 V at Tj = 25 °C, and 1–4.4 V across the full junction temperature range (−55 °C to +150 °C). This standard-level threshold ensures compatibility with 5 V and 10 V gate drivers without level-shifting circuitry.
Can PHX23NQ11T be used in avalanche mode, and what is its rated energy?
Yes - the PHX23NQ11T is rated for non-repetitive drain-source avalanche energy EDS(AL)S = 93 mJ under defined test conditions (ID = 14 A, VDD ≤ 100 V, tp = 0.1 ms). This specification confirms ruggedness against inductive switching transients in motor and relay drive applications.
What package type does PHX23NQ11T use, and how is pin 2 configured?
The PHX23NQ11T uses the SOT186A (TO-220F) package, where pin 2 is the drain terminal and is internally connected to the isolated mounting base. Unlike standard TO-220, the drain is not electrically tied to the heatsink tab - instead, the entire tab is insulated, enabling safe mounting to conductive surfaces.
PHX23NQ11T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 110 V
- Current - Continuous Drain (Id) @ 25°C:
- 16A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 70mOhm @ 13A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 22 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 830 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 41.6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
PHX23NQ11T,127 FAQ
1.How can I place an order for PHX23NQ11T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHX23NQ11T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHX23NQ11T,127 reliable?
The price and inventory of PHX23NQ11T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHX23NQ11T,127 is usually 5 days.
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PHX23NQ11T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHX23NQ11T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHX23NQ11T,127?
For technical support, including PHX23NQ11T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHX23NQ11T,127 requirements.
6.How does Aetrix verify that PHX23NQ11T,127 is sourced from the original manufacturer or authorized distributors?
All PHX23NQ11T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHX23NQ11T,127 meets industry standards.
7.What is the process for return or replacement of PHX23NQ11T,127?
All PHX23NQ11T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHX23NQ11T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHX23NQ11T,127 part is unused and in its original packaging.
Return procedure for PHX23NQ11T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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