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NXP Semiconductors PHX34NQ11T,127
- Part No.:
- PHX34NQ11T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
PHX34NQ11T,127.pdf
- Description:
- MOSFET N-CH 110V 24.8A TO220F
- Quantity:
- Payment:
- Shipping:
Inventory:6,694
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Product details
Overview
PHX34NQ11T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in a fully isolated TO-220F (SOT186A) package, rated for 110 V drain-source voltage, 24.8 A DC drain current at 25 °C, and 40 mΩ maximum RDS(on) at VGS = 10 V. It serves as a high-efficiency switching element in primary-side power conversion stages of off-line SMPS and DC-DC converters.
For engineers reviewing the PHX34NQ11T datasheet, PHX34NQ11T pinout, PHX34NQ11T application, or PHX34NQ11T equivalent, key selection criteria include its isolated mounting base (2500 VRMS isolation), low thermal resistance (2.2 K/W junction-to-heatsink), avalanche ruggedness (115 mJ), and suitability for thermally constrained industrial power supplies requiring galvanic separation between power switch and heatsink.
Technical Context
This device employs TrenchMOS™ technology to achieve low on-state resistance while maintaining robust gate oxide integrity and stable threshold voltage (2–4 V typical at 25 °C). Its isolated TO-220F package integrates a dielectrically separated mounting base, enabling direct heatsink attachment without additional insulation hardware.
The PHX34NQ11T features a fast-switching profile with 12 ns turn-on delay, 55 ns rise time, and 48 ns turn-off delay under standard test conditions (VDD = 50 V, RG = 5.6 Ω), supported by 40 nC total gate charge and 18 nC Miller charge - optimized for hard-switched topologies operating up to several hundred kHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 110 V - Maximum continuous drain-source blocking voltage; supports 100 V bus designs with 10% margin. |
| RDS(on) | ≤40 mΩ @ VGS = 10 V, Tj = 25 °C - Enables <1 W conduction loss at 5 A; rises to ≤108 mΩ at 150 °C junction. |
| ID (DC) | 24.8 A @ Th = 25 °C - Sustains full-load current with external heatsink; derates to 15.7 A at 100 °C heatsink temperature. |
| Ptot | 56.8 W @ Th = 25 °C - Total dissipation limit with heatsink; requires thermal design using Rth(j-h) = 2.2 K/W. |
| VISOL | 2500 VRMS - Galvanic isolation between all three terminals and heatsink per IEC 50–60 Hz sinusoidal test; eliminates need for insulating pads. |
| EDS(AL)S | 115 mJ - Non-repetitive unclamped inductive avalanche energy at ID = 34 A; supports robust operation during transient overloads. |
| Qg(tot) | 40 nC - Total gate charge determines driver strength requirement; enables efficient gate drive with <1 W average power at 100 kHz. |
Pinout & Package
PHX34NQ11T uses the SOT186A (TO-220F) plastic single-ended package with isolated heatsink mounting and one mounting hole. The metal mounting base (MB) is electrically isolated from all three leads and rated for 2500 VRMS isolation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires ≥±20 V absolute max rating; threshold voltage 2–4 V ensures reliable turn-on with standard 10 V logic-level drivers. |
| 2 | Drain (D) | High-side power node; connected internally to isolated mounting base; must be referenced to heatsink potential only via dielectric interface. |
| 3 | Source (S) | Return path for load current; forms common reference for gate drive; source-drain diode supports synchronous rectification or freewheeling. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Delivers 35–40 mΩ RDS(on) at 10 V drive while maintaining >1000-cycle gate oxide reliability under repetitive stress. |
| Fully isolated mounting base | Enables direct bolt-down to grounded heatsink without insulating hardware; reduces thermal interface resistance and assembly cost. |
| Avalanche-rated operation | Withstands 115 mJ unclamped inductive energy - allows safe operation in flyback or forward converters without snubber redesign. |
| Low gate charge (40 nC) | Reduces driver power consumption and EMI generation; supports efficient 50–200 kHz switching in compact SMPS designs. |
| Enhanced thermal performance | Rth(j-h) = 2.2 K/W enables 25 °C heatsink temperature rise per watt - simplifies thermal management in sealed enclosures. |
Applications
| Industrial AC-DC Adapters | Server PSU Primary Switch |
|---|---|
|
Use Scenario: 300 W universal-input offline adapter for factory automation controllers. IC Role / Device Role / Timing Role: Primary-side switching transistor in discontinuous conduction mode (DCM) flyback topology. Use Value: Isolated TO-220F package eliminates insulator pad, reducing thermal resistance by ~0.8 K/W versus standard TO-220; 110 V rating supports 90–264 VAC input with margin. |
Use Scenario: 80 PLUS Platinum 1 kW server power supply with active clamp forward converter. IC Role / Device Role / Timing Role: Main power switch in high-side configuration with clamped voltage transitions. Use Value: 115 mJ avalanche energy rating prevents failure during clamp capacitor discharge transients; 40 mΩ RDS(on) limits conduction loss to <1.5 W at 6 A RMS. |
| Telecom DC-DC Modules | Industrial Motor Drive Inverters |
|
Use Scenario: 48 V input, 12 V output intermediate bus converter in 5G base station power shelf. IC Role / Device Role / Timing Role: Synchronous rectifier control switch in secondary-side synchronous buck stage. Use Value: Low Qgd/Qgs ratio (18/7 nC) minimizes shoot-through risk during dead-time transitions; 76 ns reverse recovery supports 300 kHz operation. |
Use Scenario: Brake chopper switch in 3-phase 400 VAC industrial VFD for pump control. IC Role / Device Role / Timing Role: Regenerative energy dump switch activated during deceleration. Use Value: 99.4 A peak drain current (IDM) handles 10× motor stall current surges; isolated base prevents ground loop noise coupling into encoder signals. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP36NF10 | 100 V VDS, 36 A ID, 30 mΩ RDS(on), non-isolated TO-220 package. | Lacks 2500 VRMS isolation; requires separate insulator pad and increases thermal resistance by ~1.5 K/W. | Select when isolation is handled at PCB level and lower RDS(on) is prioritized over thermal simplicity. |
| IXTP36N10P | 100 V VDS, 36 A ID, 32 mΩ RDS(on), isolated TO-220FP package (Rth(j-h) = 2.5 K/W). | Slightly higher thermal resistance and lower avalanche rating (85 mJ); same isolation voltage rating. | Choose when sourcing legacy IXYS parts is required and 115 mJ avalanche margin is not critical. |
Compared with STP36NF10 and IXTP36N10P, the PHX34NQ11T offers superior isolation-integrated thermal performance (2.2 K/W) and highest avalanche ruggedness (115 mJ), making it optimal for space-constrained, safety-critical industrial power where heatsink integration and transient robustness are design priorities.
Availability
PHX34NQ11T is available at Aetrix Electronics and suitable for industrial AC-DC adapters, server PSU primary switches, and telecom DC-DC modules requiring stable component supply, long-term lifecycle support, and guaranteed traceable sourcing.
Supply support for PHX34NQ11T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors, formerly Philips Semiconductors, is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications.
The PHX34NQ11T belongs to NXP's legacy TrenchMOS™ power MOSFET family, engineered specifically for high-reliability, isolated-switching applications in industrial power conversion where galvanic separation and thermal efficiency are critical.
FAQ
What is the maximum allowable gate-source voltage for PHX34NQ11T?
The PHX34NQ11T specifies ±20 V as the absolute maximum gate-source voltage (VGS). Operation beyond this range risks irreversible gate oxide damage. For reliable switching, drive the gate between 0 V (off) and +10 V (fully enhanced), as RDS(on) is characterized at 10 V and threshold voltage remains stable across temperature. Always include gate resistor and clamping protection in layout.
Does PHX34NQ11T require an insulating pad when mounted to a heatsink?
No - the PHX34NQ11T features a fully isolated mounting base rated for 2500 VRMS isolation, eliminating the need for insulating pads or shoulder washers. The metal base is dielectrically separated from pins 1–3, allowing direct mechanical and thermal contact with a grounded heatsink. This reduces thermal resistance by ~0.8–1.2 K/W compared to standard TO-220 solutions.
What is the avalanche energy rating of PHX34NQ11T and how is it tested?
The PHX34NQ11T is rated for 115 mJ of non-repetitive drain-source avalanche energy (EDS(AL)S) under unclamped inductive load conditions: ID = 34 A, tp = 0.05 ms, VDD ≤ 100 V, RGS = 50 Ω, VGS = 10 V, starting at Tj = 25 °C. This rating validates robustness against inductive switching transients in flyback, forward, and resonant topologies without external snubbers.
How does PHX34NQ11T perform at elevated junction temperatures?
At Tj = 150 °C, the PHX34NQ11T exhibits increased RDS(on) (≤108 mΩ vs. ≤40 mΩ at 25 °C) and reduced VGS(th) (1 V min vs. 2–4 V typical at 25 °C), but maintains full functionality within limiting values. Its 150 °C maximum junction temperature and 2.2 K/W Rth(j-h) enable stable operation in sealed enclosures when heatsink temperature is maintained ≤100 °C.
Can PHX34NQ11T be used in synchronous rectification applications?
Yes - the PHX34NQ11T includes an integrated body diode with 76 ns reverse recovery time (trr) and 240 nC recovered charge (Qr) at IS = 17 A, making it suitable for secondary-side synchronous rectification in DC-DC converters up to ~300 kHz. Its low Qgd/Qgs ratio further supports clean commutation in high-frequency buck or forward topologies.
PHX34NQ11T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 110 V
- Current - Continuous Drain (Id) @ 25°C:
- 24.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 40mOhm @ 17A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 40 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1700 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 56.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
PHX34NQ11T,127 FAQ
1.How can I place an order for PHX34NQ11T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHX34NQ11T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHX34NQ11T,127 reliable?
The price and inventory of PHX34NQ11T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHX34NQ11T,127 is usually 5 days.
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PHX34NQ11T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHX34NQ11T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHX34NQ11T,127?
For technical support, including PHX34NQ11T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHX34NQ11T,127 requirements.
6.How does Aetrix verify that PHX34NQ11T,127 is sourced from the original manufacturer or authorized distributors?
All PHX34NQ11T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHX34NQ11T,127 meets industry standards.
7.What is the process for return or replacement of PHX34NQ11T,127?
All PHX34NQ11T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHX34NQ11T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHX34NQ11T,127 part is unused and in its original packaging.
Return procedure for PHX34NQ11T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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