NXP Semiconductors PHX45NQ11T,127

Overview

PHX45NQ11T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in a fully isolated TO-220F (SOT186A) package, designed for high-efficiency switching in DC-to-DC converters and switched-mode power supplies. It delivers V_DS = 110 V, R_DS(on) ≤ 25 mΩ at V_GS = 10 V and I_D = 25 A, with 2500 V_RMS isolation between terminals and heatsink.

For engineers reviewing the PHX45NQ11T datasheet, PHX45NQ11T pinout, PHX45NQ11T application, or PHX45NQ11T equivalent, this device is selected for robust high-current switching where galvanic isolation, avalanche ruggedness (250 mJ), and thermal stability up to 150 °C junction temperature are critical design requirements.

Technical Context

The PHX45NQ11T employs TrenchMOS™ technology to achieve low on-state resistance and fast switching dynamics, with gate charge parameters (Q_g(tot) = 61 nC, Q_gd = 25 nC) optimized for hard-switched topologies. Its isolated mounting base enables direct heatsink attachment without additional insulation.

It features a fully rated avalanche energy capability (250 mJ, unclamped inductive load), integrated source-drain diode with V_SD = 0.87–1.2 V at I_S = 25 A, and isolation characteristics including 2500 V_RMS terminal-to-heatsink withstand voltage and 10 pF drain-to-heatsink capacitance.

Key Specifications

Pinout & Package

PHX45NQ11T uses the SOT186A (TO-220F) plastic single-ended package with isolated mounting base - a 3-lead, full-pack TO-220 variant where the metal tab (pin 2, drain) is electrically isolated from the heatsink interface, enabling safe chassis-grounded heatsink mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP45NF10 and IRF450B, the PHX45NQ11T uniquely combines 110 V rating, sub-25 mΩ on-resistance, galvanic isolation, and verified avalanche ruggedness - making it optimal for space-constrained, safety-certified, high-current SMPS where thermal and isolation integrity are non-negotiable.

Availability

PHX45NQ11T is available at Aetrix Electronics and suitable for server power supplies, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and certified isolation performance.

Supply support for PHX45NQ11T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors, formerly Philips Semiconductors, is a global leader in high-performance analog and power semiconductor solutions, with deep expertise in automotive, industrial, and power management applications.

The PHX45NQ11T belongs to NXP's legacy TrenchMOS™ power MOSFET family, engineered specifically for high-reliability, isolated switching in industrial and telecom power conversion systems where safety, thermal robustness, and avalanche tolerance are mandatory.

FAQ

What is the maximum continuous drain current rating for PHX45NQ11T at 100 °C heatsink temperature?

The PHX45NQ11T supports a continuous drain current of 19.2 A at a heatsink temperature of 100 °C and V_GS = 10 V, as specified in Table 3 of the product data sheet. This derating reflects thermal limits under real-world heatsink conditions and must be used for thermal design validation - not the 30.4 A rating at 25 °C.

Does PHX45NQ11T require external gate resistors for reliable switching in a 200 kHz SMPS?

Yes - while the PHX45NQ11T has moderate gate charge (61 nC), its 25 nC Miller charge necessitates a carefully selected gate resistor (typically 5–15 Ω) to control dV/dt, suppress oscillation, and prevent shoot-through in high-frequency hard-switched topologies. The 5.6 Ω resistor used in the datasheet's timing test (td(on)/tr) serves as a validated reference point.

Can PHX45NQ11T be mounted directly to a grounded aluminum heatsink without electrical isolation hardware?

Yes - the PHX45NQ11T's TO-220F (SOT186A) package features a fully isolated mounting base, allowing direct mechanical and thermal attachment to a grounded heatsink. Its 2500 V_RMS isolation rating ensures no breakdown occurs between drain and heatsink, eliminating the need for mica washers or silicone pads in compliant designs.

What is the typical reverse recovery charge (Q_r) of the intrinsic body diode in PHX45NQ11T?

The PHX45NQ11T's source-drain diode exhibits a typical recovered charge (Q_r) of 260 nC under conditions of I_S = 20 A, dI_S/dt = −100 A/µs, and V_GS = 0 V, as measured in Table 5. This value directly impacts switching losses in synchronous rectification and freewheeling applications.

Is PHX45NQ11T suitable for use in automotive under-hood applications?

No - the PHX45NQ11T is not qualified to AEC-Q101 and lacks extended temperature characterization beyond 150 °C junction limit. Its datasheet specifies operation from −55 °C to +150 °C, but automotive under-hood environments demand validated reliability, PPAP documentation, and failure-in-time (FIT) data not provided for this part. Use only in industrial or telecom applications.