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NXP Semiconductors PHX8NQ11T,127
- Part No.:
- PHX8NQ11T,127
- Manufacturer:
- NXP Semiconductors
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack, Isolated Tab
- Datasheet:
-
PHX8NQ11T,127.pdf
- Description:
- MOSFET N-CH 110V 7.5A TO220F
- Quantity:
- Payment:
- Shipping:
Inventory:3,500
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Product details
Overview
PHX8NQ11T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel TrenchMOS™ standard-level power MOSFET in a fully isolated TO-220F (SOT186A) package, designed for high-efficiency switching in DC-DC converters and switched-mode power supplies. It delivers VDS = 110 V, ID = 7.5 A at TH = 25 °C, RDS(on) ≤ 180 mΩ at VGS = 10 V and Tj = 25 °C, with 2500 VRMS isolation between terminals and heatsink.
For engineers reviewing the PHX8NQ11T datasheet, PHX8NQ11T pinout, PHX8NQ11T application, or PHX8NQ11T equivalent, this device is selected for robust, isolated high-voltage switching where thermal management via heatsink mounting and avalanche energy handling (35 mJ) are critical design considerations.
Technical Context
The PHX8NQ11T uses TrenchMOS™ technology to achieve low on-state resistance and fast switching performance, with gate charge Qg(tot) = 14.7 nC and rise/fall times of 23 ns / 7.2 ns under standard test conditions. Its isolated TO-220F package enables direct heatsink mounting without electrical insulation hardware.
It features a built-in source-drain diode with VSD = 1.0–1.5 V at IS = 5.5 A and reverse recovery time trr = 55 ns, supporting synchronous rectification and freewheeling in hard-switched topologies. The device operates across Tj = −55 °C to +150 °C with VGS(th) = 1–4 V and guaranteed avalanche ruggedness.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 110 V - Maximum drain-source blocking voltage; supports 100 V bus designs with margin. |
| ID (DC) | 7.5 A at TH = 25 °C - Continuous current capability with heatsink; derates to 4.7 A at TH = 100 °C. |
| RDS(on) | 150–180 mΩ at VGS = 10 V, Tj = 25 °C - Low conduction loss enabling <1.5 W dissipation at 6 A. |
| Ptot | 27.7 W at TH = 25 °C - Total power dissipation limit; requires heatsink with Rth(j-h) ≤ 4.5 K/W. |
| VISOL | 2500 VRMS - Isolation voltage from all three terminals to external heatsink; eliminates need for insulating pads. |
| EDS(AL)S | 35 mJ - Non-repetitive unclamped avalanche energy; enables reliable operation under inductive turn-off stress. |
| trr | 55 ns - Source-drain diode reverse recovery time; reduces switching loss and EMI in flyback/forward converters. |
Pinout & Package
PHX8NQ11T is housed in a plastic single-ended TO-220F package (SOT186A), featuring an electrically isolated mounting base for direct heatsink attachment without thermal interface pads or insulators.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Gate (G) | Control terminal; requires 10 V drive for full enhancement; threshold voltage 1–4 V ensures TTL/CMOS compatibility. |
| 2 | Drain (D) | High-side switching node; connected to isolated heatsink; rated for 110 V DC blocking. |
| 3 | Source (S) | Power return path; referenced to system ground; carries full load current and diode forward current up to 7.5 A. |
Key Features
| Feature | Design Value |
|---|---|
| TrenchMOS™ technology | Enables lower RDS(on) and higher cell density vs planar MOSFETs, improving power density in compact SMPS designs. |
| Fully isolated package (TO-220F) | Eliminates need for mica washers or silicone pads-reduces thermal resistance and assembly cost in heatsink-mounted applications. |
| 2500 VRMS isolation rating | Permits safe operation in grounded-heatsink configurations for AC/DC adapters, industrial PSUs, and telecom rectifiers. |
| Avalanche-rated (35 mJ) | Withstands unclamped inductive switching events without failure-critical for relay drivers, motor control, and flyback snubberless designs. |
| Low Qgd/Qgs ratio (5.3/2.3 nC) | Reduces Miller effect and improves controllability during hard switching, minimizing risk of shoot-through in half-bridge layouts. |
Applications
| AC/DC Adapter Primary Switch | Industrial DC-DC Converter High-Side Switch |
|---|---|
|
Use Scenario: 90–264 VAC input, 12–24 VDC output flyback converter operating at 65–100 kHz. IC Role / Device Role / Timing Role: Primary-side power switch controlling energy transfer; driven by UC3842/UC3845 or similar PWM controller. Use Value: 110 V VDS rating provides 20% margin over reflected 90 V peak, while 2500 VRMS isolation simplifies heatsink grounding and safety certification. |
Use Scenario: 48 V input, 5–15 V output isolated forward or half-bridge converter for PLC I/O modules. IC Role / Device Role / Timing Role: High-side primary switch in fixed-frequency hard-switched topology; synchronized with secondary-side rectifier timing. Use Value: 7.5 A continuous current and 35 mJ avalanche energy ensure reliability under load transients and short-circuit fault conditions. |
| Telecom Rectifier Module | Motor Drive Protection Switch |
|
Use Scenario: -48 V DC input telecom rectifier with OR-ing and hot-swap functionality. IC Role / Device Role / Timing Role: Isolated high-side switch managing input rail connection; controlled via dedicated hot-swap controller. Use Value: Fully isolated TO-220F package allows direct mounting to chassis ground while maintaining galvanic separation from logic circuitry. |
Use Scenario: 24–48 V DC brushed motor driver with overcurrent and stall protection. IC Role / Device Role / Timing Role: High-side load switch enabling rapid shutdown during fault detection; used with current-sense amplifier and comparator. Use Value: Fast 55 ns diode trr and low 180 mΩ RDS(on) minimize power loss during freewheeling and reduce heat generation during extended stall events. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP8NK100Z | VDS = 100 V, RDS(on) = 1.2 Ω (higher), no isolation rating, TO-220AB package. | Lacks heatsink isolation; requires insulating hardware; suitable only where chassis grounding is not required. | Select when isolation is unnecessary and cost sensitivity outweighs thermal performance. |
| IXTP12N10P | VDS = 100 V, RDS(on) = 0.7 Ω, non-isolated TO-220, no avalanche rating specified. | No isolation or avalanche ruggedness data; limited to low-risk switching environments. | Prefer only in non-safety-critical, low-transient applications with conservative layout margins. |
Compared with STP8NK100Z and IXTP12N10P, the PHX8NQ11T uniquely combines 110 V rating, sub-180 mΩ on-resistance, 2500 VRMS isolation, and 35 mJ avalanche capability-making it the only option among the three qualified for isolated, high-reliability industrial power conversion.
Availability
PHX8NQ11T is available at Aetrix Electronics and suitable for AC/DC adapters, industrial DC-DC converters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and certified isolation performance.
Supply support for PHX8NQ11T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
NXP Semiconductors is a global semiconductor leader focused on secure connectivity solutions for automotive, industrial, and IoT applications, with roots in Philips Semiconductors' power electronics heritage.
The PHX8NQ11T belongs to NXP's legacy TrenchMOS™ power MOSFET family, engineered specifically for high-efficiency, isolated switching in off-line and intermediate bus power conversion systems.
FAQ
What is the maximum gate-source voltage rating for PHX8NQ11T?
The PHX8NQ11T has a maximum gate-source voltage (VGS) rating of ±20 V DC, as specified in its Absolute Maximum Ratings table. Exceeding this limit risks permanent gate oxide damage. For reliable operation, drive circuits should clamp VGS within −15 V to +15 V, with typical enhancement achieved at VGS ≥ 10 V. This rating applies across the full junction temperature range of −55 °C to +150 °C.
Does PHX8NQ11T require external isolation hardware when mounted to a heatsink?
No, the PHX8NQ11T does not require external isolation hardware. Its TO-220F (SOT186A) package features a fully isolated mounting base rated for 2500 VRMS isolation between all three terminals and the heatsink. This eliminates the need for mica washers, silicone pads, or insulating sleeves-reducing thermal resistance and assembly complexity in production.
What is the typical drain-source on-resistance of PHX8NQ11T at elevated temperature?
The PHX8NQ11T exhibits RDS(on) = 485 mΩ maximum at Tj = 150 °C and VGS = 10 V, per its Characteristics table. This represents a ~3.2× increase over its 25 °C value (150–180 mΩ), reflecting standard MOSFET positive temperature coefficient behavior. Designers must account for this derating in thermal calculations for sustained high-current operation.
Can PHX8NQ11T be used in avalanche mode, and what is its rated energy?
Yes, the PHX8NQ11T is rated for non-repetitive unclamped inductive avalanche with EDS(AL)S = 35 mJ under defined test conditions (ID = 4.5 A, VDD ≤ 100 V, tp = 0.1 ms). This ruggedness supports reliable operation during inductive turn-off transients in relay drivers, motor controls, and flyback converters without external snubbers.
What are the key dynamic parameters that affect PHX8NQ11T's switching performance?
Key dynamic parameters include total gate charge Qg(tot) = 14.7 nC, gate-drain (Miller) charge Qgd = 5.3 nC, and output capacitance Coss = 60 pF. These values determine drive strength requirements, switching speed, and voltage overshoot during hard switching. With tr = 23 ns and tf = 7.2 ns at VDD = 50 V and RG = 4.7 Ω, PHX8NQ11T supports efficient operation up to 500 kHz in well-designed gate-drive circuits.
PHX8NQ11T,127 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- NXP Semiconductors
- Series:
- TrenchMOS™
- Package/Case:
- TO-220-3 Full Pack, Isolated Tab
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 110 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 180mOhm @ 6A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs:
- 14.7 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 360 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 27.7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F
PHX8NQ11T,127 FAQ
1.How can I place an order for PHX8NQ11T,127 through Aetrix?
Please submit a Request for Quotation (RFQ) for PHX8NQ11T,127 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PHX8NQ11T,127 reliable?
The price and inventory of PHX8NQ11T,127 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PHX8NQ11T,127 is usually 5 days.
3.What payment methods are accepted for PHX8NQ11T,127?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PHX8NQ11T,127 transactions.
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4.How is shipping managed for PHX8NQ11T,127?
PHX8NQ11T,127 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PHX8NQ11T,127 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PHX8NQ11T,127?
For technical support, including PHX8NQ11T,127 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PHX8NQ11T,127 requirements.
6.How does Aetrix verify that PHX8NQ11T,127 is sourced from the original manufacturer or authorized distributors?
All PHX8NQ11T,127 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PHX8NQ11T,127 meets industry standards.
7.What is the process for return or replacement of PHX8NQ11T,127?
All PHX8NQ11T,127 units undergo pre-shipment inspection (PSI). If there is an issue with PHX8NQ11T,127, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PHX8NQ11T,127 part is unused and in its original packaging.
Return procedure for PHX8NQ11T,127:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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