NXP Semiconductors PHX9NQ20T,127

Overview

PHX9NQ20T from NXP Semiconductors (formerly Philips Semiconductors) is an N-channel enhancement-mode TrenchMOS power transistor in SOT186A (FPAK) package, rated for 200 V drain-source voltage, 5.2 A continuous drain current at 25 °C, and ≤400 mΩ on-state resistance at V_GS = 10 V. It serves as a high-efficiency switching element in off-line SMPS, TV/computer monitor power supplies, and DC-DC converters.

For engineers reviewing the PHX9NQ20T datasheet, PHX9NQ20T pinout, PHX9NQ20T application, or PHX9NQ20T equivalent, this page delivers verified electrical parameters, thermal performance data, gate charge characteristics, avalanche energy rating (93 mJ), and isolation specifications critical for reliable high-voltage power stage design.

Technical Context

The PHX9NQ20T employs trench-gate MOSFET technology to achieve low R_DS(on) and fast switching with minimal gate charge (Q_g(tot) = 24 nC). Its isolated heatsink mounting enables direct thermal coupling to external heatsinks while maintaining 2500 V_RMS isolation between terminals and heatsink.

It features a robust body diode with reverse recovery time of 92 ns and Q_rr = 0.5 µC, supporting synchronous rectification and hard-switched topologies. Thermal resistance junction-to-mounting base is 5 K/W, enabling high-power operation with proper heatsinking.

Key Specifications

Pinout & Package

SOT186A (FPAK) is a plastic single-ended TO-220 variant with electrically isolated heatsink mounting plane, 3 leads, and 1 mounting hole. The case (heatsink tab) is isolated from all terminals and rated for 2500 V_RMS isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel high-voltage power MOSFET applications.

Compared with STP9NK20ZFP and IRF640NPBF, the PHX9NQ20T offers unique value through its integrated isolated heatsink, certified 2500 V_RMS isolation, and guaranteed 93 mJ avalanche energy-making it preferred for safety-critical, space-constrained, and thermally demanding off-line power designs where reliability under transient stress is essential.

Availability

PHX9NQ20T is available at Aetrix Electronics and suitable for off-line switched-mode power supplies, TV and computer monitor power supplies, and DC-DC converters requiring stable component supply, long-term lifecycle support, and consistent parametric performance across production batches.

Supply support for PHX9NQ20T includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

NXP Semiconductors is a global semiconductor company formed from the spin-off of Philips' semiconductor division, specializing in high-performance analog, logic, and power devices for automotive, industrial, and consumer markets.

The PHX9NQ20T belongs to NXP's TrenchMOS power transistor family, engineered for high-efficiency, high-reliability switching in safety-isolated AC-DC and DC-DC power conversion systems.

FAQ

What is the maximum continuous drain current rating for PHX9NQ20T at 100 °C heatsink temperature?

The PHX9NQ20T supports 3.3 A continuous drain current at a heatsink temperature (T_hs) of 100 °C and V_GS = 10 V. This derating reflects thermal limits defined in the Absolute Maximum Ratings table; operation beyond this requires verification of junction temperature using R_{th j-hs} = 5 K/W and actual power dissipation in the PHX9NQ20T application.

Does PHX9NQ20T have a built-in body diode, and what are its key characteristics?

Yes, the PHX9NQ20T integrates a parasitic body diode with typical forward voltage V_SD = 0.85 V at 9 A and reverse recovery time t_rr = 92 ns. Its Q_rr = 0.5 µC and I_SM = 35 A pulsed rating make it suitable for freewheeling in hard-switched converters-though external Schottky diodes may be added for ultra-low-loss or high-frequency operation.

What is the gate threshold voltage range for PHX9NQ20T, and how does it vary with temperature?

The PHX9NQ20T has a gate threshold voltage V_GS(th) of 2–4 V at 25 °C, narrowing to 1–6 V across -55 °C to +150 °C. At 150 °C, minimum V_GS(th) drops to 1 V, which improves turn-on margin at high temperature but requires careful gate drive design to avoid unintended conduction during transients.

Can PHX9NQ20T be used in avalanche mode, and what is its rated non-repetitive avalanche energy?

Yes, the PHX9NQ20T is fully rated for non-repetitive avalanche operation with E_AS = 93 mJ under specified conditions (unclamped inductive load, I_AS = 7.2 A, t_p = 100 µs, T_j = 25 °C). This rating is validated per IEC 134 and enables use in circuits subject to inductive switching stress without external clamping components.

What is the thermal resistance from junction to mounting base (R_{th j-hs}) for PHX9NQ20T, and how is it measured?

The PHX9NQ20T has a maximum R_{th j-hs} of 5 K/W, measured from the silicon junction to the isolated mounting base (case/heatsink interface) under standard test conditions. This value assumes optimal thermal interface material and flat, clean mounting surface-actual system R_th will include interface resistance and heatsink thermal resistance in series with the PHX9NQ20T's intrinsic 5 K/W.