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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMCB60XNEAYL

Name: PMCB60XNEAYL
Brand: Nexperia USA Inc.
SKU: PMCB60XNEAYL
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMCB60XNEAYL

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 3-XFDFN

Datasheet:: PMCB60XNEAYL.pdf

Description:: SMALL SIGNAL MOSFET FOR MOBILE

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMCB60XNEAYL from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in an ultra-small DSN1006-3 (SOT8026) chip-scale package. It delivers 4.3 A continuous drain current at V_GS = 4.5 V and 25 °C, with R_DS(on) of 40 mΩ (typ), low 0.8 V gate threshold, and ESD protection >2 kV HBM - optimized for space-constrained battery-switching and high-speed load control.

For engineers reviewing the PMCB60XNEAYL datasheet, PMCB60XNEAYL pinout, PMCB60XNEAYL application, or PMCB60XNEAYL equivalent, this device is selected for ultra-compact DC power path switching where thermal performance on FR4 PCBs, fast turn-on/turn-off timing (t_d(on) = 20 ns, t_f = 74 ns), and low-voltage gate drive compatibility are critical.

Technical Context

This MOSFET uses Trench technology to achieve low R_DS(on) and fast switching while maintaining robust gate oxide integrity. Its 1.0 × 0.6 × 0.2 mm DSN1006-3 package places all three terminals (G, S, D) on the bottom die attach side, requiring solder paste stencil optimization per JEDEC-standard reflow footprint.

The device operates with V_GS(th) from 0.5 V to 1.1 V (25 °C), enabling reliable turn-on from 1.8 V logic, and exhibits normalized R_DS(on) increase of ~1.4× at 150 °C junction temperature - supporting stable operation in thermally dense portable electronics.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V maximum - supports 24 V rail switching and automotive stop-start battery systems.
R_DS(on)	40 mΩ typ @ V_GS = 4.5 V, I_D = 3.5 A, T_j = 25 °C - enables <150 mW conduction loss at 3 A.
Q_G(tot)	5 nC typ - ensures low gate drive energy and fast switching with standard 3.3 V/5 V microcontroller outputs.
t_f	74 ns typ @ V_DS = 15 V, I_D = 4 A, R_G(ext) = 6 Ω - minimizes switching transition losses in PWM load control.
ESD Rating	>2 kV HBM (Class H2) - eliminates need for external ESD protection in handheld and wearables designs.
P_tot	1 W @ T_amb = 25 °C on FR4 (6 cm² drain pad) - defines thermal derating envelope for compact PCB layouts.
V_GS(th)	0.8 V typ - allows full enhancement with 1.8 V GPIO, reducing system-level voltage translation complexity.

Pinout & Package

Package: DSN1006-3 (SOT8026), ultra-thin chip-scale package measuring 1.0 × 0.6 × 0.2 mm, with bottom-terminal configuration and no leads. Requires controlled reflow profile and precise stencil aperture (0.08 mm thickness recommended).

Pin/Terminal	Circuit Role	Design Meaning
1	G (Gate)	Control terminal; accepts logic-level drive; low C_iss (420 pF) reduces Miller effect during switching.
2	S (Source)	Reference node for gate drive; tied to system ground in low-side configurations; forms cathode of intrinsic body diode.
3	D (Drain)	Power output node; large copper pad required (6 cm²) for thermal dissipation; connects to load or battery positive.

Key Features

Feature	Design Value
Ultra-small footprint	1.0 × 0.6 mm body area - saves >70% board space vs. SOT23-3 in wearable and hearing aid PCBs.
Trench MOSFET architecture	Enables 40 mΩ R_DS(on) at 4.5 V drive - achieves higher current density than planar equivalents in same package.
Low V_GS(th)	0.8 V typical - ensures guaranteed turn-on with 1.8 V I/O without level shifters in modern SoC interfaces.
Fast switching	t_d(on) = 20 ns, t_f = 74 ns - reduces transition losses in 1–5 MHz PWM load switching applications.
ESD-hardened gate	HBM >2 kV - withstands handling and assembly stress without gate oxide damage in automated SMT lines.

Applications

Battery Protection Switch

High-Speed Line Driver

Use Scenario: Bidirectional battery disconnect in USB-C PD power banks to prevent reverse current and over-discharge.

IC Role / Device Role / Timing Role: Low-side N-channel switch controlling battery-to-system power path; activated/deactivated within 100 µs during fault detection.

Use Value: 40 mΩ R_DS(on) limits voltage drop to <120 mV at 3 A, preserving battery runtime; 0.8 V V_GS(th) ensures compatibility with 1.8 V fuel-gauge MCU outputs.

Use Scenario: Transmit-side driver in industrial sensor interface modules requiring 10 Mbps digital signal routing over 50 Ω traces.

IC Role / Device Role / Timing Role: Active pull-down element in push-pull line driver topology; switches between high-Z and grounded states.

Use Value: 74 ns fall time and 5 nC Q_G enable clean edge transitions up to 10 MHz; ultra-small DSN1006 footprint avoids trace stubs that degrade signal integrity.

Low-Side Load Switch

DC-DC Converter Synchronous Rectifier

Use Scenario: Controlled power delivery to peripheral modules (e.g., BLE radio, display backlight) in medical IoT sensors.

IC Role / Device Role / Timing Role: Low-side load switch enabling software-controlled power gating; driven directly by ARM Cortex-M0+ GPIO.

Use Value: 0.8 V V_GS(th) guarantees turn-on with 3.3 V or 1.8 V logic; 2 kV HBM ESD rating eliminates external TVS in compact sealed enclosures.

Use Scenario: Secondary-side synchronous rectifier in isolated 5 V/3 A flyback converter for smart home hubs.

IC Role / Device Role / Timing Role: High-efficiency replacement for Schottky diode; driven by transformer-coupled gate signal synchronized to primary switch.

Use Value: 40 mΩ R_DS(on) cuts conduction loss by >60% vs. 0.4 V Schottky; 150 °C max T_j supports sustained operation under 70 °C ambient in enclosed housings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN10H400LQ-7	R_DS(on) = 45 mΩ @ 4.5 V; larger SOT-723 package (1.2 × 0.8 mm); Q_G = 6.2 nC	Higher thermal resistance (R_th(j-a) ≈ 300 K/W) limits power handling on minimal PCB copper	Preferred when legacy SOT-723 footprint reuse is required and 5 mΩ R_DS(on) penalty is acceptable.
AO3414	R_DS(on) = 44 mΩ @ 4.5 V; SOT-23 package (3.0 × 1.4 mm); V_GS(th) = 1.0–2.5 V	Higher V_GS(th) risks incomplete turn-on with 1.8 V logic; 3× larger footprint consumes more board area	Selected only when existing SOT-23 layout cannot be modified and gate drive voltage ≥2.5 V is guaranteed.

Compared with DMN10H400LQ-7 and AO3414, PMCB60XNEAYL offers the smallest footprint, lowest gate threshold, and best R_DS(on)/size ratio - making it optimal for next-generation ultra-compact battery-powered devices where thermal margin and logic-level compatibility are non-negotiable.

Availability

PMCB60XNEAYL is available at Aetrix Electronics and suitable for battery protection switches, high-speed line drivers, low-side load switches, and synchronous rectifier circuits requiring stable component supply across high-mix, low-volume production runs.

Supply support for PMCB60XNEAYL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and logic ICs for consumer, industrial, and automotive markets.

This part belongs to Nexperia's TrenchMOS portfolio - engineered specifically for space- and power-constrained portable electronics, emphasizing ultra-low R_DS(on), fast switching, and robust ESD tolerance in chip-scale packages.

FAQ

What is the maximum continuous drain current for PMCB60XNEAYL at 100 °C ambient temperature?

The maximum continuous drain current is 2.2 A at T_amb = 100 °C, measured with the device mounted on an FR4 PCB with single-sided copper, tin-plated, and a 6 cm² drain pad. This reflects thermal derating due to increased R_th(j-a) at elevated ambient temperatures - design must ensure junction temperature stays below 150 °C under worst-case power dissipation.

Can PMCB60XNEAYL be used in a high-side switching configuration?

No - PMCB60XNEAYL is an N-channel MOSFET with source tied to the reference node; high-side switching requires either a P-channel device or an N-channel with gate drive above the supply rail. Its pinout and threshold characteristics are optimized for low-side placement where source connects to ground and gate is referenced to that node.

What is the recommended solder paste stencil thickness for DSN1006-3 reflow?

The recommended stencil thickness is 0.08 mm, per Nexperia's SOT8026 footprint guidelines. This ensures adequate solder volume for reliable interconnects while preventing bridging between the 0.25 mm pitch terminals. The land pattern specifies 0.4 mm × 0.5 mm solder pads with 0.2 mm solder mask clearance.

Does PMCB60XNEAYL have a specified avalanche rating?

No - the datasheet does not specify unclamped inductive switching (UIS) or avalanche energy rating. The device is intended for linear or switching operation within its absolute maximum ratings (e.g., V_DS ≤ 30 V, I_D ≤ 4.3 A). Designers must avoid inductive load conditions that could cause voltage overshoot beyond V_DS = 30 V without external clamping.

PMCB60XNEAYL Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 3-XFDFN

Packaging:: Tape & Reel (TR)

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 30 V

Current - Continuous Drain (Id) @ 25°C:: 3.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.8V, 4.5V

Rds On (Max) @ Id, Vgs:: 55mOhm @ 3.5A, 4.5V

Vgs(th) (Max) @ Id:: 1.1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 7.5 nC @ 4.5 V

Vgs (Max):: ±12V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 15 V

FET Feature:: -

Power Dissipation (Max):: 480mW (Ta), 7W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: DSN1006-3

PMCB60XNEAYL FAQ

1.How can I place an order for PMCB60XNEAYL through Aetrix?

Please submit a Request for Quotation (RFQ) for PMCB60XNEAYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMCB60XNEAYL reliable?

The price and inventory of PMCB60XNEAYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMCB60XNEAYL is usually 5 days.

3.What payment methods are accepted for PMCB60XNEAYL?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMCB60XNEAYL transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMCB60XNEAYL?

PMCB60XNEAYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMCB60XNEAYL order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMCB60XNEAYL?

For technical support, including PMCB60XNEAYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMCB60XNEAYL requirements.

6.How does Aetrix verify that PMCB60XNEAYL is sourced from the original manufacturer or authorized distributors?

All PMCB60XNEAYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMCB60XNEAYL meets industry standards.

7.What is the process for return or replacement of PMCB60XNEAYL?

All PMCB60XNEAYL units undergo pre-shipment inspection (PSI). If there is an issue with PMCB60XNEAYL, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMCB60XNEAYL part is unused and in its original packaging.

Return procedure for PMCB60XNEAYL:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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