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Nexperia USA Inc. PMCB60XNEZ
- Part No.:
- PMCB60XNEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 3-XFDFN
- Datasheet:
-
PMCB60XNEZ.pdf
- Description:
- PMCB60XNE/SOT8026/DSN1006-3
- Quantity:
- Payment:
- Shipping:
Inventory:7,727
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Product details
Overview
PMCB60XNEZ from Nexperia is a 30 V, N-channel enhancement-mode Trench MOSFET in an ultra-small DSN1006-3 (SOT8026) chip-scale package, designed for low-side load switching and high-speed line driving. It delivers RDS(on) = 40 mΩ (typ) at VGS = 4.5 V, supports 4.3 A continuous drain current at 25 °C, and features ESD protection >2 kV HBM (Class H2).
For engineers reviewing the PMCB60XNEZ datasheet, PMCB60XNEZ pinout, PMCB60XNEZ application, or PMCB60XNEZ equivalent, this device is selected for space-constrained battery-switching circuits where fast switching, low threshold voltage (0.8 V typ), and thermal performance on FR4 PCBs are critical design requirements.
Technical Context
This MOSFET uses Trench technology to achieve low RDS(on) and fast switching with td(on) = 20 ns and tf = 74 ns under standard test conditions. Its gate threshold voltage (VGS(th) = 0.5–1.1 V) enables direct drive from 1.8 V and 2.5 V logic interfaces without level shifting.
The device operates across –55 °C to 150 °C junction temperature, with thermal resistance Rth(j-sp) = 13–18 K/W to solder point and Rth(j-a) = 220–258 K/W on single-layer FR4 (6 cm² drain pad), enabling reliable operation in thermally constrained portable electronics.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - Maximum drain-source blocking voltage; suitable for 3.3 V/5 V/12 V rail switching with margin. |
| RDS(on) | 40 mΩ (typ) at VGS = 4.5 V, ID = 3.5 A, Tj = 25 °C - Enables <150 mW conduction loss at 3.5 A, reducing thermal load in compact layouts. |
| VGS(th) | 0.8 V (typ) - Allows full enhancement with 1.8 V GPIO, eliminating need for gate drivers in low-voltage microcontroller interfaces. |
| QG(tot) | 5 nC (typ) - Low gate charge supports efficient 1–10 MHz switching in DC-DC load switches and PWM-driven loads. |
| ID (cont) | 4.3 A at Tamb = 25 °C, t ≤ 5 s - Sustains peak load currents in portable power paths without derating for short bursts. |
| ESD Rating | >2 kV HBM (Class H2) - Provides robust handling during board assembly and end-user service without external protection diodes. |
| Ciss | 420 pF - Low input capacitance minimizes gate drive power and improves noise immunity in high-frequency switching. |
Pinout & Package
Package: DSN1006-3 (SOT8026), ultra-compact chip-scale package measuring 1.0 × 0.6 × 0.2 mm, optimized for high-density PCB layouts and automated reflow assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | G (Gate) | Control terminal; accepts logic-level voltages (1.8–4.5 V); low Ciss enables fast edge rates with minimal drive strength. |
| 2 | S (Source) | Reference node for gate drive and current return path; internally connected to substrate; requires low-impedance PCB ground plane. |
| 3 | D (Drain) | High-current output terminal; exposed copper pad on bottom side serves as primary thermal and electrical path to PCB drain pad (6 cm² recommended). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.0 × 0.6 mm body size - Reduces PCB area by >60% vs. SOT23, enabling placement beneath connectors or near battery contacts. |
| Low RDS(on) at 1.8 V | 155 mΩ (max) at VGS = 1.8 V, ID = 0.5 A - Ensures usable on-resistance even with legacy 1.8 V I/O rails. |
| Fast switching | tr = 40 ns, tf = 74 ns - Supports clean transitions in 5–10 MHz load-switching applications with minimal shoot-through risk. |
| Trench MOSFET architecture | Optimized cell pitch and channel geometry - Delivers higher current density per mm² than planar alternatives without sacrificing ruggedness. |
| ESD-hardened gate | HBM >2 kV - Eliminates need for external gate protection in handheld and wearables designs, reducing BOM count. |
Applications
| Battery Protection Switch | USB-C Power Path Control |
|---|---|
|
Use Scenario: Isolating Li-ion battery from system during overvoltage, overtemperature, or fault conditions in portable medical devices. IC Role / Device Role / Timing Role: Low-side load switch controlled by fuel gauge or protection IC; must respond within 100 µs to fault signals. Use Value: 0.8 V VGS(th) ensures turn-on with 1.8 V supervisor outputs; 40 mΩ RDS(on) limits voltage drop to <140 mV at 3.5 A, preserving battery runtime. |
Use Scenario: Enabling/disabling 5 V power delivery from USB-C port to internal 3.3 V LDO in compact IoT hubs. IC Role / Device Role / Timing Role: High-speed power gate between VBUS and system rail; toggled during hot-plug negotiation and role swap. Use Value: 5 nC QG(tot) allows full switching in <1 µs with 5 mA GPIO drive; ultra-small DSN1006 fits adjacent to USB-C receptacle without routing congestion. |
| Wireless Earbud Charging Case | Smartwatch Display Backlight Driver |
|
Use Scenario: Controlling charging current flow from case battery to earbud PCB via pogo-pin interface. IC Role / Device Role / Timing Role: Low-side switch activated only during physical mating; must withstand repeated hot-insertion transients. Use Value: 2 kV HBM ESD rating protects against user-handling discharge; 150 °C max Tj accommodates localized heating near battery contacts. |
Use Scenario: PWM-dimming LED backlight in always-on smartwatch displays with tight thickness constraints. IC Role / Device Role / Timing Role: Synchronous low-side switch in boost converter feedback path; switched at 1–2 MHz for flicker-free dimming. Use Value: 420 pF Ciss and 74 ns tf enable stable 2 MHz operation with <5% duty-cycle jitter; 0.2 mm profile avoids interference with OLED stack height. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN10H400LQ-7 | RDS(on) = 45 mΩ (min) at VGS = 4.5 V; larger X1-DFN1006-3 package (1.0 × 0.6 × 0.35 mm); no specified HBM rating. | Higher thermal resistance (Rth(j-a) ≈ 300 K/W) limits continuous current to ~3.0 A on same FR4 layout. | Select when board assembly uses standard DFN reflow profiles and ESD sensitivity is mitigated externally. |
| AO3414 | RDS(on) = 44 mΩ (max) at VGS = 4.5 V; SOT-23 package (2.9 × 1.3 × 1.0 mm); VGS(th) = 0.7–1.4 V. | 3.7× larger footprint consumes PCB area incompatible with sub-10 mm wide wearable modules. | Choose when mechanical clearance allows SOT-23 and gate drive voltage exceeds 2.5 V consistently. |
Compared with DMN10H400LQ-7 and AO3414, PMCB60XNEZ offers the smallest form factor and lowest VGS(th), making it uniquely suited for 1.8 V–driven, space-limited battery switches where thermal headroom and ESD robustness are non-negotiable.
Availability
PMCB60XNEZ is available at Aetrix Electronics and suitable for battery protection switches, USB-C power path control, wireless earbud charging cases, and smartwatch display backlight drivers requiring stable component supply and long-term production continuity.
Supply support for PMCB60XNEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert specializing in high-performance, energy-efficient components for automotive, industrial, mobile, and computing applications.
PMCB60XNEZ belongs to Nexperia's TrenchMOS portfolio-designed specifically for ultra-compact, low-voltage power switching in portable and wearable electronics where size, efficiency, and reliability are co-constrained.
FAQ
What is the maximum continuous drain current for PMCB60XNEZ at 100 °C ambient temperature?
The maximum continuous drain current is 2.2 A at Tamb = 100 °C, as specified in Table 5 (Limiting values) under "ID drain current" with VGS = 4.5 V. This derating reflects thermal limitations of the DSN1006-3 package on standard FR4 PCBs and must be verified against actual board layout and airflow conditions.
Does PMCB60XNEZ require a gate resistor for typical 3.3 V GPIO switching?
No external gate resistor is required for basic on/off control with 3.3 V GPIO, due to its low QG(tot) (5 nC typ) and 0.8 V VGS(th). However, a 10–47 Ω series resistor is recommended if driving at >1 MHz or in noisy environments to damp ringing and reduce EMI.
Can PMCB60XNEZ be used in avalanche-rated applications?
No-PMCB60XNEZ is not characterized or guaranteed for repetitive avalanche operation. The datasheet does not specify EAS (avalanche energy) or IAR (repetitive avalanche current). It must be operated within Safe Operating Area (SOA) limits shown in Figure 4, avoiding unclamped inductive switching.
How is thermal performance affected when the drain pad is not implemented as a 6 cm² copper area?
Without the recommended 6 cm² drain pad, Rth(j-a) degrades from 220–258 K/W to ≥300 K/W (per Table 6 notes), reducing continuous current capability by ~35% at 25 °C ambient. Thermal simulation or IR imaging is advised for layouts using smaller pads or multilayer stacks.
PMCB60XNEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 3-XFDFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 30 V
- Current - Continuous Drain (Id) @ 25°C:
- 3.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 55mOhm @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.5 nC @ 4.5 V
- Vgs (Max):
- ±12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 420 pF @ 15 V
- FET Feature:
- -
- Power Dissipation (Max):
- 480mW (Ta), 7W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DSN1006-3
PMCB60XNEZ FAQ
1.How can I place an order for PMCB60XNEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMCB60XNEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMCB60XNEZ reliable?
The price and inventory of PMCB60XNEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMCB60XNEZ is usually 5 days.
3.What payment methods are accepted for PMCB60XNEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMCB60XNEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMCB60XNEZ?
PMCB60XNEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMCB60XNEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMCB60XNEZ?
For technical support, including PMCB60XNEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMCB60XNEZ requirements.
6.How does Aetrix verify that PMCB60XNEZ is sourced from the original manufacturer or authorized distributors?
All PMCB60XNEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMCB60XNEZ meets industry standards.
7.What is the process for return or replacement of PMCB60XNEZ?
All PMCB60XNEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMCB60XNEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMCB60XNEZ part is unused and in its original packaging.
Return procedure for PMCB60XNEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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