Nexperia USA Inc. PMCM4401UPEZ

Overview

PMCM4401UPEZ from Nexperia is a P-channel enhancement-mode Trench MOSFET in a 4-bump Wafer Level Chip-Scale Package (WLCSP), rated for −20 V drain-source voltage, 75 mΩ typical R_DS(on) at V_GS = −4.5 V and I_D = −3 A, with ESD protection >2 kV HBM. It serves as a compact, low-threshold battery switch or low-side loadswitch in space-constrained portable electronics.

For engineers reviewing the PMCM4401UPEZ datasheet, PMCM4401UPEZ pinout, PMCM4401UPEZ application, or PMCM4401UPEZ equivalent, key selection criteria include its ultra-small 0.78 × 0.78 mm WLCSP4 footprint, −0.6 V typical gate threshold, thermal resistance of 50–60 K/W (junction-to-solder point), and suitability for high-speed switching in battery-powered systems.

Technical Context

This device uses Trench MOSFET technology to achieve low on-resistance and fast switching in a P-channel configuration. Its gate-source threshold voltage (−0.6 V typ) enables direct logic-level drive from 1.8 V or 2.5 V controllers without level shifting.

The WLCSP4 package features metal-coated device back tied to drain potential, enabling efficient thermal conduction through the PCB mounting pad. The dual-source configuration (A2 and B2 pins) reduces source inductance and improves current sharing in high-frequency switching.

Key Specifications

Pinout & Package

Package: WLCSP4 (Wafer Level Chip-Scale Package), 0.78 × 0.78 × 0.35 mm, 4 bumps in 2×2 array, metal-coated backside connected to drain.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel loadswitch applications.

Compared with DMN2012LFG-7 and SI2301DDS-T1-BE3, PMCM4401UPEZ delivers superior size efficiency (0.6 mm² vs ≥2.9 mm²), lowest thermal resistance to solder point (5–10 K/W), and fastest switching-making it the sole option meeting sub-1 mm², <10 ns turn-on, and 1.2 A continuous current requirements simultaneously.

Availability

PMCM4401UPEZ is available at Aetrix Electronics and suitable for battery protection switches, USB-C port power management, smartwatch backlight control, and wireless charging receiver load control requiring stable component supply across high-mix, low-volume production runs.

Supply support for PMCM4401UPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions optimized for efficiency, miniaturization, and robustness in consumer, computing, and communications markets.

PMCM4401UPEZ belongs to Nexperia's WLCSP Trench MOSFET product line, engineered specifically for ultra-compact, thermally demanding loadswitch and battery isolation roles in next-generation portable electronics.

FAQ

What is the maximum continuous drain current for PMCM4401UPEZ at 100 °C ambient?

The datasheet specifies −2 A continuous drain current at T_amb = 100 °C with standard FR4 mounting (6 cm² drain pad). This derating reflects thermal limits-not electrical failure-and assumes proper PCB copper area and airflow. At 25 °C ambient, the limit rises to −3.2 A under identical conditions.

Can PMCM4401UPEZ be used in high-side switch configurations?

No-it is optimized for low-side switching with source terminals referenced to ground. Using it as a high-side switch would require gate drive above system voltage (e.g., >20 V for full enhancement), which contradicts its −8 V maximum V_GS rating and negates its low-threshold advantage. High-side use risks permanent gate oxide damage.

Does the WLCSP4 package require special PCB layout considerations?

Yes. The metal-coated backside must contact a dedicated, unmasked copper drain pad (minimum 6 cm² per datasheet) for thermal performance. Solder mask should fully expose the pad; stencil aperture must match the 0.4 × 0.4 mm ball pitch. Avoid via-in-pad unless filled and capped to prevent solder voiding.

How does ESD protection >2 kV HBM impact system-level design?

This rating eliminates the need for external HBM-class TVS diodes on gate or drain lines in handheld assembly environments. However, it does not cover system-level ESD (IEC 61000-4-2); external protection remains mandatory for ports exposed to user contact or cable interfaces.