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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMCM4401VNEAZ

Name: PMCM4401VNEAZ
Brand: Nexperia USA Inc.
SKU: PMCM4401VNEAZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMCM4401VNEAZ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 4-XFBGA, WLCSP

Datasheet:: PMCM4401VNEAZ.pdf

Description:: MOSFET N-CH 12V 4.7A 4WLCSP

Quantity:: RFQ Add To RFQ list

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Inventory:112,495

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Product details

Overview

PMCM4401VNEAZ from Nexperia is a 12 V, N-channel enhancement-mode Trench MOSFET in a 4-bump Wafer Level Chip-Scale Package (WLCSP), optimized for low-threshold switching in space-constrained loadswitch and line driver applications. It delivers 6 A continuous drain current at V_GS = 4.5 V, 36 mΩ typical R_DS(on) at 25 °C, and ESD protection >2 kV HBM.

For engineers reviewing the PMCM4401VNEAZ datasheet, PMCM4401VNEAZ pinout, PMCM4401VNEAZ application, or PMCM4401VNEAZ equivalent, key selection criteria include ultra-small footprint (0.78 × 0.78 mm), low gate threshold (0.6 V typ), thermal resistance to solder point (5–10 K/W), and validated performance in high-speed relay driving and low-side switching circuits.

Technical Context

This MOSFET employs Trench technology to achieve low R_DS(on) and fast switching with minimal gate charge (Q_G(tot) = 6–9 nC). Its symmetric dual-source WLCSP4 layout (A2 and B2 both labeled S) supports compact PCB routing while maintaining thermal integrity via metal-coated drain backside.

The device operates within a junction temperature range of –55 °C to 150 °C and supports gate drive down to 1.5 V, enabling compatibility with 1.8 V logic systems. Its sub-threshold conduction behavior (I_D = 200 nA at V_GS = 2.5 V) ensures low leakage in battery-powered standby modes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	12 V maximum - defines safe operating voltage ceiling for low-voltage power rail switching
R_DS(on)	36 mΩ typ @ V_GS = 4.5 V, I_D = 3 A, T_j = 25 °C - enables <100 mW conduction loss at 3 A
V_GS(th)	0.6 V typical - allows direct interface with 1.8 V microcontroller GPIO without level shifting
Q_G(tot)	6–9 nC - supports <50 ns turn-on/turn-off times with 6 Ω external gate resistor
ESD Rating	>2 kV HBM - provides robust handling during automated assembly and board-level integration
P_tot	1250 mW @ T_sp = 25 °C - achievable with 6 cm² drain pad on FR4, enabling passive thermal management
R_th(j-sp)	5–10 K/W - quantifies thermal path efficiency from junction to solder point, critical for WLCSP reliability

Pinout & Package

Package: WLCSP4 (OL-PMCM4401VNE), 0.78 mm × 0.78 mm × 0.35 mm, metal-coated drain backside, 4 bumps in 2×2 array.

Pin/Terminal	Circuit Role	Design Meaning
A1	G	Gate input - accepts logic-level drive; low C_iss (335 pF) minimizes drive power
A2	S	Source terminal - tied internally to B2; forms common return path for low-side switch configuration
B1	D	Drain output - connected to metal-coated package backside; requires dedicated thermal pad on PCB
B2	S	Second source terminal - electrically redundant with A2; improves current sharing and reduces bond wire inductance

Key Features

Feature	Design Value
Ultra-compact WLCSP footprint	0.78 × 0.78 mm - reduces PCB area by >70% vs. comparable SOT-23 MOSFETs, ideal for wearables and IoT sensors
Low R_DS(on) at 1.8 V drive	77 mΩ max @ V_GS = 1.8 V, I_D = 1 A - enables efficient operation from single-cell Li-ion or coin-cell supplies
High peak current capability	I_DM = 19 A (10 µs pulse) - supports inrush current limiting in LED drivers and solenoid control
Thermally optimized construction	R_th(j-sp) = 5–10 K/W - enables 1.25 W dissipation with minimal temperature rise when soldered to copper pad
Integrated ESD protection	>2 kV HBM - eliminates need for external TVS diodes in handheld and portable designs

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving electromagnetic relays in industrial PLC I/O modules where board space is constrained and 3.3 V/1.8 V MCU outputs are standard.

IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current; turn-on delay <7 ns ensures precise timing in synchronized control sequences.

Use Value: Eliminates discrete level-shifter stages; 36 mΩ R_DS(on) limits coil voltage drop to <200 mV at 5.5 A, preserving relay pull-in margin.

Use Scenario: Transmitting TTL/CMOS signals across short PCB traces or flex cables in high-density sensor hubs.

IC Role / Device Role / Timing Role: Active pull-down element in push-pull or open-drain bus configurations; fast fall time (18 ns) maintains signal integrity up to 50 MHz.

Use Value: 120 pF Crss minimizes capacitive loading on driven lines; dual-source pins reduce ground bounce during edge transitions.

Low-Side Loadswitch

Switching Power Circuit

Use Scenario: Enabling/disabling power to peripheral ICs (e.g., RF transceivers, ADCs) in battery-powered medical monitors.

IC Role / Device Role / Timing Role: Controlled power path switch; sub-1 V V_GS(th) ensures full enhancement even under brown-out conditions.

Use Value: 1 µA I_DSS at 12 V blocks >99.9% of standby current; 0.78 mm² footprint fits within tight keep-out zones near sensitive analog sections.

Use Scenario: Synchronous rectification in buck converters for portable computing peripherals operating from 5 V input rails.

IC Role / Device Role / Timing Role: Secondary-side switch replacing Schottky diode; gate drive synchronized to primary FET using bootstrap or isolated gate driver.

Use Value: 42 mΩ max R_DS(on) at 150 °C reduces conduction loss by 65% vs. 100 mΩ discrete alternatives, improving efficiency by 2.1% at 3 A load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
PMZB390UN,115	R_DS(on) = 45 mΩ @ 4.5 V; larger SOT-23 package (2.9 × 1.3 mm); higher Q_G = 12 nC	Less suitable for ultra-dense layouts; better thermal derating above 85 °C ambient	Choose when board-level reworkability or higher power dissipation (>1.5 W) is required
DMN10H7TSE-7	R_DS(on) = 28 mΩ @ 4.5 V; X2-DFN0606 package (0.6 × 0.6 mm); no integrated ESD protection	Requires external ESD protection; tighter pitch demands advanced stencil design	Choose when lowest possible R_DS(on) and smallest footprint are prioritized over assembly robustness

Compared with PMZB390UN and DMN10H7TSE-7, PMCM4401VNEAZ offers the best balance of ultra-miniature size, built-in ESD resilience, and verified 1.8 V drive capability-making it optimal for consumer wearables and space-limited industrial sensors where rework access is limited and supply voltage headroom is minimal.

Availability

PMCM4401VNEAZ is available at Aetrix Electronics and suitable for relay driver, high-speed line driver, low-side loadswitch, and switching power circuit applications requiring stable component supply and long-term production continuity.

Supply support for PMCM4401VNEAZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable, and energy-efficient components for automotive, industrial, mobile, and consumer electronics markets.

The PMCM4401VNEAZ belongs to Nexperia's TrenchMOS® low-voltage logic-level MOSFET product line, engineered specifically for miniaturized, battery-operated, and thermally constrained applications where gate drive voltage headroom is limited and PCB real estate is at a premium.

FAQ

What is the maximum continuous drain current for PMCM4401VNEAZ at 100 °C ambient?

The maximum continuous drain current is 3 A at T_amb = 100 °C with device mounted on an FR4 PCB having a 6 cm² drain pad. This value accounts for thermal derating due to reduced heat dissipation at elevated ambient temperatures and is specified in Table 5 of the datasheet under "Limiting values."

Can PMCM4401VNEAZ be used with 1.8 V logic-level gate drive?

Yes - V_GS(th) is as low as 0.4 V (min), and R_DS(on) is characterized down to V_GS = 1.5 V (86–120 mΩ @ 0.1 A). At V_GS = 1.8 V, typical R_DS(on) is 60–77 mΩ, enabling functional switching in low-power microcontroller interfaces without external level shifters.

How is thermal performance affected by PCB layout for this WLCSP device?

Thermal resistance R_th(j-a) varies from 250 K/W (free air) to 85 K/W (6 cm² drain pad), so PCB layout directly determines power handling. A minimum 6 cm² tin-plated copper pad under the metal-coated drain backside is required to achieve the 1250 mW P_tot rating; smaller pads increase junction temperature and reduce safe operating current.

Does PMCM4401VNEAZ have a body diode, and what is its forward voltage?

Yes - it includes an inherent source-drain body diode. At I_S = 1.1 A and T_j = 25 °C, V_SD is 0.7–1.2 V. The diode supports freewheeling in inductive load circuits but is not rated for continuous reverse recovery; use external flyback diodes for high-frequency switching applications.

PMCM4401VNEAZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 4-XFBGA, WLCSP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 12 V

Current - Continuous Drain (Id) @ 25°C:: 4.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 9 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 335 pF @ 6 V

FET Feature:: -

Power Dissipation (Max):: 400mW (Ta), 12.5W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 4-WLCSP (0.78x0.78)

PMCM4401VNEAZ FAQ

1.How can I place an order for PMCM4401VNEAZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMCM4401VNEAZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMCM4401VNEAZ reliable?

The price and inventory of PMCM4401VNEAZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMCM4401VNEAZ is usually 5 days.

3.What payment methods are accepted for PMCM4401VNEAZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMCM4401VNEAZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMCM4401VNEAZ?

PMCM4401VNEAZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMCM4401VNEAZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMCM4401VNEAZ?

For technical support, including PMCM4401VNEAZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMCM4401VNEAZ requirements.

6.How does Aetrix verify that PMCM4401VNEAZ is sourced from the original manufacturer or authorized distributors?

All PMCM4401VNEAZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMCM4401VNEAZ meets industry standards.

7.What is the process for return or replacement of PMCM4401VNEAZ?

All PMCM4401VNEAZ units undergo pre-shipment inspection (PSI). If there is an issue with PMCM4401VNEAZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMCM4401VNEAZ part is unused and in its original packaging.

Return procedure for PMCM4401VNEAZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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