Nexperia USA Inc. PMCM4401VPEZ

Overview

PMCM4401VPEZ from Nexperia is a P-channel enhancement-mode Trench MOSFET in WLCSP4 (0.78 × 0.78 × 0.35 mm) package, rated for −12 V drain-source voltage, 65 mΩ R_DS(on) at V_GS = −4.5 V and I_D = −3 A, with ESD protection >2 kV HBM. It serves as a compact, low-threshold battery switch or low-side loadswitch in space-constrained portable electronics.

For engineers reviewing the PMCM4401VPEZ datasheet, PMCM4401VPEZ pinout, PMCM4401VPEZ application, or PMCM4401VPEZ equivalent, this page delivers verified electrical specs, thermal derating curves, gate charge behavior, safe operating area limits, and real-world use context for high-speed switching and power management design validation.

Technical Context

This device uses Trench MOSFET technology to achieve low threshold voltage (−0.6 V typ.) and stable sub-threshold conduction, enabling efficient operation from low-voltage rails (e.g., 1.8 V gate drive). Its dual-source configuration (A2 and B2 pins) supports symmetric current handling and thermal distribution across the WLCSP die.

The MOSFET exhibits gate charge parameters optimized for fast switching: Q_G(tot) = 8.3 nC typ., Q_GD = 2.2 nC, and C_iss/C_oss/C_rss of 415/195/165 pF respectively - enabling <25 ns turn-off delay and <17 ns fall time under 6 Ω external gate resistance.

Key Specifications

Pinout & Package

Package: WLCSP4 (Wafer Level Chip-Scale Package), 0.78 mm × 0.78 mm × 0.35 mm, metal-coated backside connected to drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel loadswitch applications.

Compared with DMN2053LFG-7 and SI2301DDS-T1-GE3, the PMCM4401VPEZ offers the smallest footprint and highest ESD robustness among the three, making it optimal for miniaturized battery-powered systems where gate drive voltage may be marginal and handling risk is elevated.

Availability

PMCM4401VPEZ is available at Aetrix Electronics and suitable for battery protection switches, high-speed line drivers, low-side loadswitches, and power-rail sequencing circuits requiring stable component supply, consistent wafer-lot traceability, and long-term production continuity.

Supply support for PMCM4401VPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-grade and industrial MOSFETs, ESD protection, and logic solutions.

The PMCM4401VPEZ belongs to Nexperia's WLCSP P-channel MOSFET product line, engineered specifically for ultra-compact, low-voltage power switching in portable and wearable electronics where board area and thermal density are critical constraints.

FAQ

What is the maximum continuous drain current for PMCM4401VPEZ at 100 °C ambient temperature?

The maximum continuous drain current is −2.5 A at T_amb = 100 °C, as specified in Table 5 (Limiting values) under "ID drain current" with V_GS = −4.5 V. This value assumes mounting on an FR4 PCB with single-sided copper, tin-plated, and a 6 cm² drain pad - matching the thermal test condition used for R_th(j-a) = 85 K/W.

Does PMCM4401VPEZ require a heatsink for operation at 3 A continuous current?

No external heatsink is required, but thermal design must follow the datasheet's mounting specification: a 6 cm² tin-plated copper pad on FR4 PCB for the drain (backside metal). At 3 A and 25 °C ambient, junction temperature rises ~195 mW × 85 K/W ≈ 16.6 °C above ambient - well within the 150 °C limit. Derating applies above 25 °C ambient per Figure 2.

Can PMCM4401VPEZ be used as a high-side switch with 3.3 V logic-level gate drive?

Yes - its typical V_GS(th) of −0.6 V and R_DS(on) of 77 mΩ max at V_GS = −2.5 V ensure reliable enhancement with 3.3 V logic (i.e., V_GS = −3.3 V relative to source). However, gate drive must be referenced to the source node, not ground, since it is a P-channel device configured as high-side switch.

How is the dual-source pin configuration (A2 and B2) intended to be used in PCB layout?

Both A2 and B2 are electrically connected to the same internal source node and must be routed to the same net - typically the system ground or load return path. Using both pads improves current sharing, reduces effective source inductance, and enhances thermal conduction from the die to the PCB, especially under pulsed or high-duty-cycle operation.