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Nexperia USA Inc. PMCM4402UPEZ

Part No.:
PMCM4402UPEZ
Manufacturer:
Nexperia USA Inc.
Category:
FETs, MOSFETs
Package:
4-XFBGA, WLCSP
Datasheet:
AetrixPMCM4402UPEZ.pdf
Description:
MOSFET P-CH 20V 4WLCSP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:256

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Product details

Overview

PMCM4402UPEZ from Nexperia is a P-channel enhancement-mode Trench MOSFET in a 4-bump WLCSP package (0.78 × 0.78 × 0.35 mm), rated for −20 V drain-source voltage, −4.2 A continuous drain current at VGS = −4.5 V and 25 °C, with RDS(on) of 65 mΩ (typ) under same conditions. It serves as a compact high-side load switch in space-constrained battery-powered systems.

For engineers reviewing the PMCM4402UPEZ datasheet, PMCM4402UPEZ pinout, PMCM4402UPEZ application, or PMCM4402UPEZ equivalent, key selection criteria include ultra-low-profile WLCSP packaging, sub-1 V gate threshold (−0.6 V typ), ESD robustness (>2 kV HBM), and thermal performance on FR4 PCBs with 6 cm² drain pad.

Technical Context

This device uses Trench MOSFET technology to achieve low RDS(on) and fast switching (td(on) = 4 ns, tf = 11 ns) with minimal gate charge (QG(tot) = 6.2 nC typ). Its symmetrical dual-source configuration (A2 and B2 pins) supports low-inductance layout in high-speed line driver applications.

The −0.6 V typical VGS(th) enables direct interface with 1.8 V and 2.5 V logic, while its −20 V VDS rating and −13 A peak drain current support robust operation in portable power rail switching. Thermal resistance Rth(j-sp) is 5–10 K/W, enabling efficient heat transfer to the PCB solder point.

Key Specifications

Parameter Value and Actual Design Meaning
VDS −20 V - Maximum blocking voltage for battery-switch and high-side loadswitch circuits
RDS(on) 65 mΩ (typ) at VGS = −4.5 V, ID = −3 A, Tj = 25 °C - Enables <100 mW conduction loss at 3 A
VGS(th) −0.6 V (typ) at ID = −250 µA - Supports direct drive from low-voltage I/O without level shifting
QG(tot) 6.2 nC (typ) - Reduces gate drive power and enables >1 MHz switching in DC-DC and load-switching
ESD Rating >2 kV HBM - Ensures robust handling during board assembly and end-user integration
Ptot 1.3 W at Tamb = 25 °C (FR4, 6 cm² drain pad) - Defines maximum steady-state power dissipation in standard PCB layout
tf 11 ns (VDS = −10 V, ID = −3.3 A, RG(ext) = 6 Ω) - Critical for minimizing switching losses in high-frequency load control

Pinout & Package

Package: WLCSP4 (WLCSP4_2-2), 0.78 mm × 0.78 mm × 0.35 mm, wafer-level chip-scale package with four solder bumps arranged in 2×2 array; drain connected to metal-coated device back.

Pin/Terminal Circuit Role Design Meaning
A1 G (Gate) Control input; accepts −0.4 V to −0.9 V threshold range for reliable turn-on with low-voltage logic
A2 S (Source) Reference node for gate drive; tied to system ground or battery negative in high-side switch topology
B1 D (Drain) Main current path output; electrically connected to metal backside for enhanced thermal and current handling
B2 S (Source) Second source terminal; used for Kelvin sensing or low-inductance return path in high-speed switching

Key Features

Feature Design Value
Ultra-small footprint 0.78 × 0.78 mm WLCSP enables placement in <1 mm² board area - critical for wearables and hearing aids
Low RDS(on) at low VGS 88 mΩ (typ) at VGS = −2.5 V, ID = −2 A - ensures efficient operation with 2.5 V microcontroller GPIO
Trench MOSFET architecture Enables higher cell density and lower specific on-resistance vs planar MOSFETs - improves power efficiency per mm²
Integrated ESD protection ≥2 kV HBM rating eliminates need for external TVS in most portable designs - reduces BOM count and layout complexity
Thermal performance Rth(j-sp) = 5–10 K/W - allows >1 W dissipation with minimal temperature rise when soldered to standard FR4

Applications

Battery Protection Switch High-Speed Line Driver

Use Scenario: Reverse-current blocking and over-discharge cutoff in single-cell Li-ion battery packs for Bluetooth earbuds.

IC Role / Device Role / Timing Role: High-side load switch controlling battery-to-system power path; operates in static on/off mode with <10 µs response to protection IC signal.

Use Value: 65 mΩ RDS(on) limits voltage drop to <200 mV at 3 A, preserving runtime; ultra-thin WLCSP fits beneath battery cell.

Use Scenario: Transmit enable/disable for USB 2.0 data lines in portable docking stations.

IC Role / Device Role / Timing Role: Bidirectional analog switch with <11 ns fall time; placed between PHY and connector to isolate idle lines.

Use Value: Low QGD (2 nC) and Coss (72 pF) minimize signal distortion; dual-source pins reduce ground bounce in 480 Mbps signaling.

High-Side Loadswitch Power-Rail Sequencing Switch

Use Scenario: Controlled power-up of RF front-end modules in IoT sensor nodes powered by coin-cell batteries.

IC Role / Device Role / Timing Role: P-channel high-side switch driven directly by MCU GPIO; enables soft-start via PWM dimming at ~10 kHz.

Use Value: −0.6 V VGS(th) ensures full enhancement with 1.8 V I/O; 2.1 A derated current at 100 °C supports sustained operation in sealed enclosures.

Use Scenario: Independent sequencing of 3.3 V and 1.8 V rails in wearable health monitors using shared enable logic.

IC Role / Device Role / Timing Role: Discrete loadswitch replacing integrated PMIC channel where timing independence and low quiescent current are required.

Use Value: IDSS leakage <1 µA at −20 V ensures <1 µA off-state current - extends shelf life of pre-charged medical devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel loadswitch applications.

Alternative Part Technical Difference Application Difference Selection Advice
NX3008PBK Same WLCSP4 package, but −30 V VDS, 100 mΩ RDS(on) at −4.5 V - higher voltage margin, higher on-resistance Better suited for 24 V industrial sensors; less efficient in 3.3 V/5 V battery systems due to higher conduction loss Select when system requires >20 V fault tolerance and can accept 50 % higher RDS(on)
DMN2020LSD SO-8 package, −20 V, 42 mΩ RDS(on) at −4.5 V - lower on-resistance but 5× larger footprint (5 mm × 6 mm) Preferred for prototyping and higher-power applications where thermal mass and manual rework matter more than size Choose when board space permits and thermal design requires higher Ptot (>2 W) capability

Compared with NX3008PBK, PMCM4402UPEZ offers 35 % lower RDS(on) in identical package size, improving efficiency in space-critical 3.3 V systems; versus DMN2020LSD, it trades 58 % smaller footprint for 55 % higher RDS(on), favoring miniaturization over raw power handling.

Availability

PMCM4402UPEZ is available at Aetrix Electronics and suitable for battery switch, high-speed line driver, high-side loadswitch, and switching circuit applications requiring stable component supply across consumer electronics, wearables, and portable medical devices.

Supply support for PMCM4402UPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency and miniaturization.

This device belongs to Nexperia's WLCSP low-voltage logic-level MOSFET product line, engineered specifically for ultra-compact power management in battery-powered edge devices.

FAQ

What is the maximum continuous drain current for PMCM4402UPEZ at 100 °C ambient?

The maximum continuous drain current is −2.1 A at Tamb = 100 °C with VGS = −4.5 V, as specified in Table 5 (Limiting values). This derating reflects thermal limits on an FR4 PCB with 6 cm² drain pad; actual current depends on board layout and airflow.

Does PMCM4402UPEZ require a gate resistor for stable switching?

A gate resistor is recommended to dampen ringing and control slew rate. With QG(tot) = 6.2 nC and typical gate drive impedance, a 6 Ω external resistor (as used in the fall-time test condition) provides optimal trade-off between speed and EMI; omitting it may cause overshoot in high-dI/dt layouts.

Can PMCM4402UPEZ be used in automotive applications?

No - this part is not AEC-Q200 qualified and lacks automotive-grade qualification, reliability testing, or extended temperature validation beyond −55 °C to +150 °C junction range. Nexperia explicitly states non-automotive qualification in Section 15 of the datasheet.

How is thermal performance affected if the drain pad area is reduced below 6 cm²?

Rth(j-a) increases significantly: from 250–300 K/W (6 cm²) to 70–85 K/W (1 cm², 4-layer PCB) per Table 6. At 2 cm², Ptot derates to ~0.5 W at 25 °C ambient - users must recalculate safe operating area using Fig. 2 and Fig. 4 curves for their exact layout.

PMCM4402UPEZ Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
4-XFBGA, WLCSP
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.2A (Tj)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
6.2 nC @ 4.5 V
Vgs (Max):
±8V
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
400mW
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
4-WLCSP (0.78x0.78)

PMCM4402UPEZ FAQ

1.How can I place an order for PMCM4402UPEZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMCM4402UPEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMCM4402UPEZ reliable?

The price and inventory of PMCM4402UPEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMCM4402UPEZ is usually 5 days.

3.What payment methods are accepted for PMCM4402UPEZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMCM4402UPEZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMCM4402UPEZ?

PMCM4402UPEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMCM4402UPEZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMCM4402UPEZ?

For technical support, including PMCM4402UPEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMCM4402UPEZ requirements.

6.How does Aetrix verify that PMCM4402UPEZ is sourced from the original manufacturer or authorized distributors?

All PMCM4402UPEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMCM4402UPEZ meets industry standards.

7.What is the process for return or replacement of PMCM4402UPEZ?

All PMCM4402UPEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMCM4402UPEZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMCM4402UPEZ part is unused and in its original packaging.

Return procedure for PMCM4402UPEZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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