Nexperia USA Inc. PMCM440VNEZ

Overview

PMCM440VNEZ from Nexperia is a 12 V, N-channel enhancement-mode Trench MOSFET in a 4-bump Wafer Level Chip-Scale Package (WLCSP), optimized for ultra-compact low-side switching. It delivers R_DS(on) = 57 mΩ (typ) at V_GS = 4.5 V and I_D = 3 A, supports 5 A pulsed drain current, features ESD protection >2 kV HBM, and operates across –55 °C to 150 °C junction temperature.

For engineers reviewing the PMCM440VNEZ datasheet, PMCM440VNEZ pinout, PMCM440VNEZ application, or PMCM440VNEZ equivalent, this device is selected for space-constrained relay drivers, high-speed line drivers, and low-side loadswitches where thermal performance on FR4 PCBs and sub-1 mm footprint are critical design constraints.

Technical Context

This MOSFET uses Trench technology to achieve low threshold voltage (V_GS(th) = 0.4–0.9 V) and stable R_DS(on) over temperature - 71 mΩ (max) at T_j = 150 °C. Its gate charge profile (Q_G(tot) = 5.5–8.2 nC) enables fast switching with t_r = 24 ns and t_f = 17 ns under standard test conditions.

The WLCSP4 package integrates metal-coated drain on the device backside, enabling direct thermal conduction to the PCB copper pad. Thermal resistance from junction to solder point is as low as 5 K/W, supporting power dissipation up to 12500 mW at T_sp = 25 °C when mounted on a 6 cm² drain pad.

Key Specifications

Pinout & Package

Package: WLCSP4 (OL-PMCM440VNE), 0.78 × 0.78 × 0.35 mm, 4-bump 2×2 array with metal-coated drain on device backside.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with NX3008NBK, PMCM440VNEZ trades 12 mΩ higher R_DS(on) for 35% smaller footprint and better thermal coupling to PCB; versus DMN10H7T, it delivers 3× higher power density and 5× lower thermal resistance despite identical voltage rating.

Availability

PMCM440VNEZ is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and compact switching power circuits requiring stable component supply and consistent wafer-level packaging performance.

Supply support for PMCM440VNEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

PMCM440VNEZ belongs to Nexperia's TrenchMOS WLCSP portfolio, engineered specifically for space- and thermally constrained consumer, IoT, and portable electronics where miniaturization and efficient power switching are primary system requirements.

FAQ

What is the maximum continuous drain current for PMCM440VNEZ at 100 °C ambient?

The maximum continuous drain current is 15.5 A at T_amb = 100 °C, specified under FR4 PCB mounting with single-sided copper, tin-plated, and 6 cm² drain pad. This rating assumes proper thermal design and accounts for R_DS(on) increase with temperature - actual usable current depends on PCB copper area and airflow.

Can PMCM440VNEZ be used with 1.8 V logic-level gate drive?

Yes - V_GS(th) is as low as 0.4 V (min), and R_DS(on) remains 77–110 mΩ at V_GS = 1.8 V and I_D = 1 A. This enables direct drive from 1.8 V microcontrollers without level shifters, though gate charge (Q_G) increases slightly versus 4.5 V drive.

Is the drain terminal accessible only through the backside metal coating?

Yes - the drain is exclusively connected to the metal-coated backside of the WLCSP4 package. Bump B1 is the only top-side drain connection, and both must be soldered to the same large copper pour to ensure mechanical reliability and optimal thermal transfer per Nexperia's recommended footprint.

Does PMCM440VNEZ include integrated body diode functionality?

Yes - it features an inherent N-channel MOSFET body diode (source-drain diode) with V_SD = 0.7–1.2 V at I_S = 1.1 A and T_j = 25 °C. This diode supports freewheeling in inductive switching applications but is not rated for reverse recovery in high-frequency synchronous rectification without external snubbing.