NXP Semiconductors PMCM6501UNE023

Overview

PMCM6501UNE from Nexperia is a 20 V, N-channel enhancement-mode Trench MOSFET in a 6-bump WLCSP package (0.98 × 1.48 × 0.35 mm), optimized for low-side load switching with R_DS(on) = 17 mΩ at V_GS = 4.5 V and I_D = 3 A, 25 °C, and ESD protection >2 kV HBM. It serves in space-constrained portable electronics requiring fast switching and minimal board footprint.

For engineers reviewing the PMCM6501UNE datasheet, PMCM6501UNE pinout, PMCM6501UNE application, or PMCM6501UNE equivalent, this page delivers verified electrical parameters, thermal derating curves, gate charge behavior, safe operating area limits, and validated alternative MOSFETs for relay drivers, high-speed line drivers, and low-side loadswitches.

Technical Context

This device uses Trench MOSFET technology to achieve low threshold voltage (V_GS(th) = 0.4–0.9 V) and low on-resistance while maintaining robust 20 V drain-source breakdown (V_(BR)DSS ≥ 20 V). Its ultra-compact WLCSP6_3-2 package integrates drain, source, and gate terminals across six solder bumps with metal-coated device back tied to drain potential.

Thermal performance is defined by junction-to-solder-point resistance (R_th(j-sp) = 5–10 K/W) and junction-to-ambient resistance (R_th(j-a) = 45–225 K/W depending on PCB layout), enabling operation up to 150 °C junction temperature. Dynamic characteristics include Q_G(tot) = 19–28 nC and t_f = 46 ns under specified test conditions.

Key Specifications

Pinout & Package

PMCM6501UNE is housed in a wafer-level chip-scale package (WLCSP6_3-2) measuring 0.98 × 1.48 × 0.35 mm with six solder bumps arranged in a 3×2 grid. The device back is metal-coated and electrically connected to the drain terminal.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Compared with PMCM6501UNE, PMZ210UNEA trades lower cost for higher conduction loss and unverified ESD robustness, while DMN2011UFD-7 provides comparable performance in a more manufacturable DFN package-making it preferable for production ramp where WLCSP placement yield is a concern.

Availability

PMCM6501UNE is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits requiring stable component supply, consistent parametric performance, and long-term lifecycle support.

Supply support for PMCM6501UNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard products including MOSFETs, diodes, logic ICs, and ESD protection devices.

The PMCM6501UNE belongs to Nexperia's TrenchMOS family designed specifically for space-constrained, low-voltage power switching applications in portable and wearable electronics.

FAQ

What is the maximum continuous drain current for PMCM6501UNE at 100 °C ambient temperature?

The PMCM6501UNE supports 4.2 A continuous drain current at T_amb = 100 °C with V_GS = 4.5 V, as specified in Table 5 (Limiting values). This value reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures and assumes mounting on an FR4 PCB with a 6 cm² drain pad per datasheet condition [1]. The PMCM6501UNE must be used within this limit to avoid exceeding its 150 °C maximum junction temperature.

Does PMCM6501UNE have a body diode, and what is its forward voltage?

Yes, the PMCM6501UNE includes an intrinsic source-drain body diode with V_SD = 0.6–1.2 V at I_S = 1.2 A and T_j = 25 °C, as listed in Table 7. This diode conducts when the drain is biased below the source, enabling freewheeling in inductive load applications. The PMCM6501UNE body diode exhibits typical reverse recovery characteristics appropriate for low-frequency switching; it is not optimized for high-speed synchronous rectification.

Can PMCM6501UNE be driven directly by a 1.8 V GPIO without a level shifter?

Yes, PMCM6501UNE can be fully enhanced with a 1.8 V gate drive: its V_GS(th) range is 0.4–0.9 V, and R_DS(on) remains 20–25 mΩ at V_GS = 1.8 V and I_D = 2 A (Table 7). At 1.8 V, the PMCM6501UNE delivers usable on-state performance for low-current loads (<2 A), though conduction loss increases ~20% versus 4.5 V drive. For higher currents, 2.5 V or above is recommended.

What is the thermal resistance from junction to solder point (R_th(j-sp)) for PMCM6501UNE?

The PMCM6501UNE has a junction-to-solder-point thermal resistance of 5–10 K/W, as specified in Table 6. This low value results from the metal-coated device back directly contacting the PCB solder joint, providing an efficient thermal path. When designing layouts, ensure adequate solder volume and thermal vias beneath the drain bumps to realize the 5 K/W minimum value cited for optimal mounting conditions.

Is PMCM6501UNE automotive qualified?

No, PMCM6501UNE is not automotive qualified. Per Nexperia's legal disclaimers (Section 15), this device is classified as "non-automotive qualified" - it has not undergone AEC-Q101 stress testing or been validated for automotive temperature ranges, reliability, or failure mechanisms. The PMCM6501UNE is intended for consumer, industrial, and portable electronics applications only; use in automotive systems is at the customer's sole risk and requires full independent qualification.