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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Nexperia USA Inc. PMCM6501UNEZ

Name: PMCM6501UNEZ
Brand: Nexperia USA Inc.
SKU: PMCM6501UNEZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMCM6501UNEZ

Manufacturer:: Nexperia USA Inc.

Category:: FETs, MOSFETs

Package:: 6-XFBGA, WLCSP

Datasheet:: PMCM6501UNEZ.pdf

Description:: MOSFET N-CH 20V 8.7A 6WLCSP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

PMCM6501UNEZ from Nexperia is a 20 V, N-channel enhancement-mode Trench MOSFET in a 6-bump Wafer Level Chip-Scale Package (WLCSP), designed for ultra-compact low-side switching applications. It delivers R_DS(on) = 17 mΩ (typ) at V_GS = 4.5 V and I_D = 3 A, supports 8.7 A continuous drain current at T_amb = 25 °C, and features ESD protection > 2 kV HBM - enabling use in space-constrained relay drivers and high-speed line drivers.

For engineers reviewing the PMCM6501UNEZ datasheet, PMCM6501UNEZ pinout, PMCM6501UNEZ application, or PMCM6501UNEZ equivalent, this device is selected for low-threshold, high-density load switching where thermal resistance to solder point (R_th(j-sp) = 5–10 K/W) and sub-1 mm footprint (0.98 × 1.48 mm) are critical constraints.

Technical Context

This MOSFET employs Trench technology to achieve low gate charge (Q_G(tot) = 19–28 nC) and fast switching (t_d(on) = 7.3 ns, t_f = 46 ns), with gate threshold voltage V_GS(th) tightly specified at 0.4–0.9 V (T_j = 25 °C). Its WLCSP6_3-2 package integrates metal-coated drain on the die backside for direct thermal path to PCB.

The device operates with V_GS range of ±8 V, supports pulsed peak drain current up to 27 A (t_p ≤ 10 µs), and exhibits normalized R_DS(on) increase of ~1.5× from 25 °C to 150 °C junction temperature - confirming stable conduction under thermal stress in compact layouts.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V maximum - defines safe blocking capability in low-voltage DC systems like USB PD, battery management, and portable logic rails.
R_DS(on)	17 mΩ typ @ V_GS = 4.5 V, I_D = 3 A - enables <100 mW conduction loss at 3 A, critical for thermally isolated PCB areas.
I_D (cont)	8.7 A @ T_amb = 25 °C - achievable only with 6 cm² drain pad on FR4; derates to 4.2 A at 100 °C ambient.
Q_G(tot)	19–28 nC - determines gate drive energy and switching loss; compatible with low-power microcontroller GPIOs via series resistor.
V_GS(th)	0.6 V typ @ I_D = 250 µA - ensures reliable turn-on from 1.8 V logic, supporting modern ultra-low-voltage control interfaces.
R_th(j-sp)	5–10 K/W - quantifies thermal coupling from junction to solder point, enabling accurate transient thermal modeling without heatsink.
ESD HBM	>2 kV - provides robustness against handling and board-level ESD events without external protection diodes.

Pinout & Package

Package: WLCSP6_3-2 - wafer-level chip-scale package, 0.98 × 1.48 × 0.35 mm, 6 bumps (3 × 2), metal-coated drain on die backside.

Pin/Terminal	Circuit Role	Design Meaning
A1	G (Gate)	Control input; low capacitance (C_iss = 1050 pF) minimizes drive power and improves noise immunity.
A2	S (Source)	Reference node for gate drive; tied to PCB ground plane to minimize common-source inductance.
B1	S (Source)	Parallel source connection - reduces bond wire inductance and improves current sharing in high-di/dt switching.
B2	S (Source)	Additional source terminal for enhanced grounding and thermal spreading across multiple vias.
C1	D (Drain)	Main power output; backside metal connects directly to large copper drain pad for optimal heat extraction.
C2	D (Drain)	Secondary drain bump - increases current capacity and lowers effective R_DS(on) in parallel configuration.

Key Features

Feature	Design Value
Ultra-small footprint	0.98 × 1.48 mm WLCSP6 package - fits within 1.5 mm² PCB area, enabling placement under connectors or near IC edges.
Low threshold voltage	V_GS(th) = 0.6 V typ - allows full enhancement from 1.8 V microcontrollers without level-shifting circuitry.
Trench MOSFET architecture	Enables 17 mΩ R_DS(on) at 4.5 V while maintaining low Q_GD/Q_G ratio (≈0.3) for reduced Miller effect and clean switching.
Integrated ESD protection	>2 kV HBM rating - eliminates need for discrete TVS on gate line in consumer-grade portable designs.
Optimized thermal path	R_th(j-sp) = 5–10 K/W - enables >12 W power dissipation with minimal temperature rise when using standard 6 cm² drain pad.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Replacing electromechanical relays in IoT sensor nodes and smart home controllers to reduce size, bounce, and wear-out failure.

IC Role / Device Role: Low-side switch controlling coil current of solid-state relay modules or optocoupler inputs.

Use Value: 8.7 A continuous rating and 27 A pulse support enable direct driving of 24 V/5 W relay coils without external buffer transistors.

Use Scenario: Driving differential or single-ended signal lines in USB-C accessories, HDMI switchers, and industrial fieldbus terminations.

IC Role / Device Role: Active termination switch toggling between 50 Ω and high-Z states on high-frequency data lanes.

Use Value: 46 ns fall time and 28 ns rise time ensure minimal signal distortion up to 50 MHz, preserving eye diagram integrity.

Low-Side Loadswitch

Switching Power Converter

Use Scenario: Power gating of subsystems (e.g., display backlight, camera module, BLE radio) in wearables and medical patches.

IC Role / Device Role: Controlled power path switch with fast turn-off to prevent inrush and leakage during sleep modes.

Use Value: 1 µA I_DSS leakage at 20 V and 25 °C ensures <1 µA standby current per switched rail - extending battery life in multi-rail devices.

Use Scenario: Synchronous rectifier or primary-side switch in miniature buck converters for FPGA core supplies and PMIC auxiliary rails.

IC Role / Device Role: High-efficiency switching element operating at 500 kHz–2 MHz with minimal conduction and switching loss trade-off.

Use Value: 19–28 nC total gate charge and 17 mΩ R_DS(on) yield >92% efficiency at 3 A/5 V output in 1 MHz designs with 1.2 Ω gate driver.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
NX3008NBK	R_DS(on) = 22 mΩ @ 4.5 V; WLCSP6 but larger 1.0 × 1.5 mm outline; V_GS(th) = 0.7 V min	Higher R_DS(on) increases conduction loss by ~30% at 3 A; same package compatibility but lower thermal performance (R_th(j-sp) = 12 K/W)	Select when cost sensitivity outweighs 5 mΩ R_DS(on) penalty and thermal margin is sufficient.
DMN10H5M5S	SO-8 package; R_DS(on) = 4.5 mΩ @ 4.5 V; higher 10 V V_DS; no ESD rating specified	SO-8 requires >10× PCB area; superior R_DS(on) but lacks integrated ESD and WLCSP thermal advantages	Choose only if board space permits SO-8 and system-level ESD protection is already implemented elsewhere.

Compared with NX3008NBK, PMCM6501UNEZ offers lower R_DS(on), tighter V_GS(th), and better thermal coupling; versus DMN10H5M5S, it trades absolute R_DS(on) for 90% smaller footprint and built-in ESD - making it optimal for miniaturized, self-contained switching nodes.

Availability

PMCM6501UNEZ is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and switching power converter applications requiring stable component supply and long-term production continuity.

Supply support for PMCM6501UNEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and robustness.

This device belongs to Nexperia's TrenchMOS WLCSP portfolio, engineered specifically for ultra-compact, thermally efficient low-voltage switching in portable and space-constrained electronics.

FAQ

What is the maximum continuous drain current for PMCM6501UNEZ at 85 °C ambient?

At T_amb = 85 °C, the continuous drain current is derated to approximately 5.3 A, calculated using the normalized current curve (Fig. 3) and linear interpolation between 25 °C (8.7 A) and 100 °C (4.2 A). This assumes FR4 PCB with 6 cm² drain pad and natural convection cooling.

Can PMCM6501UNEZ be used with 1.2 V logic-level gate drive?

No - while V_GS(th) starts at 0.4 V, full enhancement requires V_GS ≥ 2.5 V for R_DS(on) ≤ 25 mΩ (per Fig. 9). At 1.2 V, R_DS(on) exceeds 100 mΩ, causing excessive conduction loss; minimum recommended V_GS is 1.8 V for functional switching.

Is the drain terminal accessible on the top or bottom of the WLCSP6 package?

The drain is electrically connected to the metal-coated backside of the die, not to any top-side bump. C1 and C2 bumps are source-connected; the drain must be soldered to a dedicated PCB copper pad beneath the package for thermal and electrical conduction - per Fig. 19 and note in Section 12.

Does PMCM6501UNEZ include body diode reverse recovery specification?

No - the datasheet does not specify reverse recovery time (t_rr) or reverse recovery charge (Q_rr). The source-drain diode is characterized only for forward voltage (V_SD = 0.6–1.2 V @ I_S = 1.2 A), indicating it is intended for unidirectional freewheeling, not high-frequency synchronous rectification.

PMCM6501UNEZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-XFBGA, WLCSP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 20 V

Current - Continuous Drain (Id) @ 25°C:: 8.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 1.5V, 4.5V

Rds On (Max) @ Id, Vgs:: 21mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 6.2 nC @ 4.5 V

Vgs (Max):: ±8V

Input Capacitance (Ciss) (Max) @ Vds:: 1050 pF @ 10 V

FET Feature:: -

Power Dissipation (Max):: 400mW

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-WLCSP (1.48x0.98)

PMCM6501UNEZ FAQ

1.How can I place an order for PMCM6501UNEZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMCM6501UNEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMCM6501UNEZ reliable?

The price and inventory of PMCM6501UNEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMCM6501UNEZ is usually 5 days.

3.What payment methods are accepted for PMCM6501UNEZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMCM6501UNEZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMCM6501UNEZ?

PMCM6501UNEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMCM6501UNEZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMCM6501UNEZ?

For technical support, including PMCM6501UNEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMCM6501UNEZ requirements.

6.How does Aetrix verify that PMCM6501UNEZ is sourced from the original manufacturer or authorized distributors?

All PMCM6501UNEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMCM6501UNEZ meets industry standards.

7.What is the process for return or replacement of PMCM6501UNEZ?

All PMCM6501UNEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMCM6501UNEZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMCM6501UNEZ part is unused and in its original packaging.

Return procedure for PMCM6501UNEZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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