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Nexperia USA Inc. PMCM6501UPEZ
- Part No.:
- PMCM6501UPEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-XFBGA, WLCSP
- Datasheet:
-
PMCM6501UPEZ.pdf
- Description:
- MOSFET P-CH 20V 6WLCSP
- Quantity:
- Payment:
- Shipping:
Inventory:11,299
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Product details
Overview
PMCM6501UPEZ from Nexperia is a P-channel enhancement-mode Trench MOSFET in a 6-bump Wafer Level Chip-Scale Package (WLCSP6_3-2), rated for -20 V drain-source voltage, 22 mΩ typical RDS(on) at VGS = -4.5 V and ID = -3 A, and optimized for high-side load switching in space-constrained portable electronics.
For engineers reviewing the PMCM6501UPEZ datasheet, PMCM6501UPEZ pinout, PMCM6501UPEZ application, or PMCM6501UPEZ equivalent, this device is selected for ultra-compact battery-switching circuits where low threshold voltage (-0.6 V typ), ESD robustness (>2 kV HBM), and thermal performance on FR4 PCBs are critical design requirements.
Technical Context
This MOSFET uses Trench MOSFET technology to achieve low on-resistance and fast switching with td(on) = 6 ns and tf = 55 ns under specified conditions. Its gate threshold voltage of -0.6 V (typ) enables direct drive from 1.8 V logic, while the integrated source-drain diode supports bidirectional current flow in load-switch configurations.
The WLCSP6 package features metal-coated drain on the device back, enabling low-inductance thermal path to the PCB. Thermal resistance Rth(j-sp) is 5–10 K/W, and Rth(j-a) drops to 45–55 K/W when mounted on a 6 cm² copper pad - critical for sustained 5.6 A continuous operation at ambient temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | -20 V maximum - defines safe blocking capability in high-side switch applications up to 20 V rail. |
| RDS(on) | 22 mΩ typ @ VGS = -4.5 V, ID = -3 A, Tj = 25 °C - determines conduction loss and junction heating during steady-state operation. |
| VGS(th) | -0.6 V typ @ ID = -250 µA - enables reliable turn-on with 1.8 V or 2.5 V logic-level gate drivers. |
| ID (cont) | -5.6 A max @ VGS = -4.5 V, Tamb = 25 °C - specifies usable continuous current on standard FR4 with 6 cm² copper pad. |
| QG(tot) | 19.1–29 nC - governs gate drive power and switching speed in high-frequency load-switching circuits. |
| ESD Rating | >2 kV HBM - ensures robustness against handling and board-level electrostatic discharge without external protection. |
| Ptot | 12.5 W @ Tsp = 25 °C - reflects maximum power dissipation capability when solder-point temperature is controlled. |
Pinout & Package
Package: WLCSP6 (WLCSP6_3-2), 0.98 × 1.48 × 0.35 mm, 6-bump wafer-level chip-scale package with metal-coated drain on device back.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | G | Gate terminal - accepts logic-level control signal; low input capacitance (1420 pF Ciss) minimizes driver loading. |
| A2 | S | Source terminal - common return node for load current; electrically tied to B1 and B2. |
| B1 | S | Source terminal - parallel connection improves current sharing and reduces source inductance. |
| B2 | S | Source terminal - redundant source bump enhances thermal and electrical performance in compact layouts. |
| C1 | D | Drain terminal - connected to metal-coated device back; primary thermal path to PCB copper pad. |
| C2 | D | Drain terminal - second drain bump lowers effective RDS(on) and improves current distribution. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 0.98 × 1.48 mm WLCSP6 package - saves >70% board area vs. SOT23, enabling integration in wearables and hearing aids. |
| Low threshold voltage | VGS(th) = -0.6 V typ - allows full enhancement with 1.8 V microcontroller GPIO, eliminating level-shifter requirement. |
| Trench MOSFET architecture | 22 mΩ RDS(on) @ -4.5 V - delivers lower conduction loss than planar P-channel devices in same package class. |
| Integrated ESD protection | >2 kV HBM - eliminates need for discrete TVS diodes in battery-input paths, reducing BOM count and layout complexity. |
| Optimized thermal path | Rth(j-sp) = 5–10 K/W - enables efficient heat transfer from junction to solder point, supporting higher continuous current density. |
Applications
| Smartphone Battery Switch | Wireless Earbud Power Management |
|---|---|
|
Use Scenario: Isolating main Li-ion battery from system during deep sleep or fault conditions to minimize standby leakage. IC Role / Device Role / Timing Role: High-side load switch controlling power rail entry to PMIC and baseband processor. Use Value: 22 mΩ RDS(on) limits voltage drop to <120 mV at 5.6 A, preserving battery runtime; ultra-low VGS(th) ensures compatibility with 1.8 V application processor GPIO. |
Use Scenario: Enabling/disabling charging circuitry and audio codec in true wireless stereo (TWS) earbuds with sub-2 mm height constraints. IC Role / Device Role / Timing Role: Compact P-channel switch managing charge path between USB-C input and battery, and between battery and codec. Use Value: 0.35 mm profile and 0.98 × 1.48 mm footprint fit within tight mechanical envelope; ESD robustness prevents field failures during assembly and end-user handling. |
| Portable Medical Sensor Node | IoT Asset Tracker Power Gating |
|
Use Scenario: Power-gating BLE transceiver and analog front-end during sensor idle periods to extend coin-cell battery life beyond 12 months. IC Role / Device Role / Timing Role: Low-leakage high-side switch disconnecting non-critical subsystems while maintaining RTC and wake-up circuitry. Use Value: IDSS ≤ -1 µA at VDS = -20 V ensures negligible quiescent current; -0.6 V VGS(th) guarantees clean turn-off with 0 V gate drive. |
Use Scenario: Controlling GPS module and cellular modem power in GPS-enabled asset trackers deployed in remote locations. IC Role / Device Role / Timing Role: Load switch sequencing power delivery to high-current peripherals only during active reporting intervals. Use Value: 5.6 A continuous rating supports burst GPS acquisition; 6 ns td(on) enables precise timing control for duty-cycled operation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel load switch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LFG-7 | RDS(on) = 28 mΩ @ -4.5 V; larger 1.6 × 1.6 mm X1-DFN package; no backside drain metal. | Higher thermal resistance (Rth(j-a) ≈ 120 K/W) limits continuous current to ~3.2 A on same PCB. | Preferred when board reworkability or visual inspection is required - DFN allows optical alignment and solder joint inspection. |
| AO3415 | RDS(on) = 42 mΩ @ -4.5 V; SOT-23 package; VGS(th) = -1.0 to -3.0 V - requires ≥3.3 V gate drive. | Not suitable for 1.8 V logic systems; larger footprint consumes ~3× more board area than WLCSP6. | Select when cost sensitivity outweighs size/thermal constraints and existing designs use SOT-23 footprints. |
Compared with DMN2020LFG-7 and AO3415, PMCM6501UPEZ delivers superior current density (5.6 A in 1.45 mm²), lowest gate drive voltage requirement, and best thermal coupling to PCB - making it optimal for next-generation miniaturized battery-powered systems where every micron and millivolt matters.
Availability
PMCM6501UPEZ is available at Aetrix Electronics and suitable for smartphone battery switches, wireless earbud power management, portable medical sensor nodes, and IoT asset tracker power gating requiring stable component supply across high-mix, low-volume production runs.
Supply support for PMCM6501UPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable, and energy-efficient components for automotive, industrial, mobile, and consumer electronics markets.
PMCM6501UPEZ belongs to Nexperia's TrenchMOS® portfolio, engineered specifically for ultra-compact, high-efficiency load switching in battery-powered portable devices where minimal footprint, low RDS(on), and logic-level drive are essential.
FAQ
What is the maximum continuous drain current for PMCM6501UPEZ on a standard FR4 PCB?
The maximum continuous drain current is -5.6 A at Tamb = 25 °C when mounted on an FR4 PCB with a 6 cm² copper pad for the drain. This value assumes VGS = -4.5 V and accounts for thermal derating per Figure 3 in the datasheet; at 100 °C ambient, the rating drops to -3.5 A.
Does PMCM6501UPEZ require external ESD protection in battery-input applications?
No - PMCM6501UPEZ integrates >2 kV Human Body Model (HBM) ESD protection on all pins, verified per JESD22-A114. This eliminates the need for external TVS diodes in typical battery-switch configurations, provided layout follows Nexperia's recommended pad geometry and solder mask definition for WLCSP6.
How does the WLCSP6 package affect thermal performance compared to SOT-23?
The WLCSP6 package places the drain directly on the metal-coated device back, creating a low-impedance thermal path to the PCB copper pad. With Rth(j-sp) of 5–10 K/W, it achieves significantly better thermal performance than SOT-23 equivalents (typically Rth(j-a) > 100 K/W), enabling up to 2.5× higher continuous current on identical board area.
Can PMCM6501UPEZ be driven directly by a 1.8 V microcontroller GPIO?
Yes - its typical gate threshold voltage is -0.6 V, with a guaranteed maximum of -0.9 V at ID = -250 µA. At VGS = -1.8 V, the device fully enhances with RDS(on) ≤ 38 mΩ (typ), enabling robust switching without level-shifting circuitry in 1.8 V logic domains.
PMCM6501UPEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 20 V
- Current - Continuous Drain (Id) @ 25°C:
- 7.3A (Tj)
- Drive Voltage (Max Rds On, Min Rds On):
- 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- -
- Gate Charge (Qg) (Max) @ Vgs:
- 19.1 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- -
- FET Feature:
- -
- Power Dissipation (Max):
- 556mW
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WLCSP (1.48x0.98)
PMCM6501UPEZ FAQ
1.How can I place an order for PMCM6501UPEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMCM6501UPEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMCM6501UPEZ reliable?
The price and inventory of PMCM6501UPEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMCM6501UPEZ is usually 5 days.
3.What payment methods are accepted for PMCM6501UPEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMCM6501UPEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMCM6501UPEZ?
PMCM6501UPEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMCM6501UPEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMCM6501UPEZ?
For technical support, including PMCM6501UPEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMCM6501UPEZ requirements.
6.How does Aetrix verify that PMCM6501UPEZ is sourced from the original manufacturer or authorized distributors?
All PMCM6501UPEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMCM6501UPEZ meets industry standards.
7.What is the process for return or replacement of PMCM6501UPEZ?
All PMCM6501UPEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMCM6501UPEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMCM6501UPEZ part is unused and in its original packaging.
Return procedure for PMCM6501UPEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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