My Inquiry
My Account
Nexperia USA Inc. PMCM6501VPEZ
- Part No.:
- PMCM6501VPEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FETs, MOSFETs
- Package:
- 6-XFBGA, WLCSP
- Datasheet:
-
PMCM6501VPEZ.pdf
- Description:
- MOSFET P-CH 12V 6.2A 6WLCSP
- Quantity:
- Payment:
- Shipping:
Inventory:4,435
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMCM6501VPEZ from Nexperia is a 12 V, P-channel enhancement-mode Trench MOSFET in a 6-bump Wafer Level Chip-Scale Package (WLCSP), optimized for ultra-compact battery-switch and low-side loadswitch applications. It delivers RDS(on) = 19 mΩ at VGS = −4.5 V and ID = −3.0 A (Tj = 25 °C), supports ±2 kV HBM ESD protection, and operates across −55 °C to +150 °C junction temperature range.
For engineers reviewing the PMCM6501VPEZ datasheet, PMCM6501VPEZ pinout, PMCM6501VPEZ application, or PMCM6501VPEZ equivalent, key selection criteria include its sub-1 mm × 1.5 mm WLCSP6 footprint, low 0.6 V gate threshold, high peak drain current (−25 A), and thermal resistance of 75 K/W (junction-to-ambient, 6 cm² drain pad).
Technical Context
This P-channel MOSFET uses Trench technology to achieve low on-resistance and fast switching with td(on) = 8 ns and tf = 62 ns under specified conditions. Its gate charge profile (QG(tot) = 19.6–29.4 nC) and capacitance values (Ciss = 1400 pF, Coss = 430 pF) support efficient operation in high-frequency loadswitching circuits.
The device features integrated source-drain diode (VSD = −0.9 to −1.2 V at IS = −1.2 A), defined pinning with dual-source and dual-drain terminals, and metal-coated backside connected to drain potential-enabling direct thermal coupling to PCB copper for enhanced power dissipation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −12 V - Maximum drain-source blocking voltage; defines safe operating range in battery-switch configurations. |
| RDS(on) | 19 mΩ (typ.) at VGS = −4.5 V, ID = −3 A - Enables <100 mW conduction loss at 3 A, critical for portable power efficiency. |
| VGS(th) | −0.6 V (typ.) - Allows reliable turn-on from 1.8 V logic-level control, supporting modern low-voltage microcontrollers. |
| ID (cont.) | −8.2 A (t ≤ 5 s, Tamb = 25 °C) - Supports pulsed high-current loads like motor drivers or hot-swap circuits. |
| ESD Rating | >2 kV HBM - Ensures robustness during board assembly and end-user handling without external protection. |
| Package | WLCSP6 (0.98 × 1.48 × 0.35 mm) - Ultra-small footprint ideal for space-constrained wearables and IoT sensors. |
| Ptot | 1250 mW (Tsp = 25 °C) - Specifies maximum steady-state power dissipation with proper PCB thermal design. |
Pinout & Package
Package: WLCSP6 (Wafer Level Chip-Scale Package), 3 × 2 bump array, metal-coated backside tied to drain potential. Dimensions: 0.98 mm × 1.48 mm × 0.35 mm; solder land pattern per Fig. 20 (Nexperia doc).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A1 | G (Gate) | Control input; accepts logic-level signals down to −0.6 V threshold; requires no level-shifting for 1.8 V/3.3 V systems. |
| A2, B1, B2 | S (Source) | Common source node; three parallel terminals reduce bond-wire inductance and improve current sharing in high-dI/dt switching. |
| C1, C2 | D (Drain) | Main power path output; backside metal connects directly to PCB drain pad for low-thermal-resistance heat transfer (Rth(j-sp) = 5–10 K/W). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 19 mΩ at −4.5 V enables <100 mW loss at 3 A, extending battery life in portable devices. |
| Sub-1 mm footprint | 0.98 × 1.48 mm area reduces PCB real estate by >60% vs. SOT-23, critical for miniaturized wearables. |
| Low VGS(th) | −0.6 V typical ensures full enhancement with 1.8 V GPIO, eliminating need for gate drivers in MCU-integrated designs. |
| High ESD robustness | >2 kV HBM rating allows direct integration into exposed interfaces without external TVS components. |
| Thermally optimized backside | Metal-coated drain backside enables direct thermal coupling to PCB copper, achieving 5 K/W junction-to-solder-point resistance. |
Applications
| Battery Protection Circuit | USB-C Power Delivery Switch |
|---|---|
Use Scenario: Reverse-polarity and overcurrent protection in single-cell Li-ion battery packs for Bluetooth earbuds. IC Role / Device Role / Timing Role: P-channel MOSFET used as high-side reverse-blocking switch, controlled by battery management IC. Use Value: 19 mΩ RDS(on) limits voltage drop to <60 mV at 3 A, preserving runtime; WLCSP6 fits within 2.5 mm × 2.5 mm module envelope. | Use Scenario: VBUS path switching in compact USB-C dongles supporting 3 A charging. IC Role / Device Role / Timing Role: Low-side loadswitch enabling/disabling 5 V power delivery to peripheral ports under MCU control. Use Value: −0.6 V VGS(th) allows direct drive from 3.3 V microcontroller GPIO; 62 ns fall time ensures clean transition during hot-plug events. |
| Wearable Sensor Node Power Gate | Industrial IoT Edge Controller Load Control |
Use Scenario: Power gating of BLE transceiver and MEMS accelerometer in coin-cell-powered fitness tracker. IC Role / Device Role / Timing Role: P-channel MOSFET acting as always-off battery disconnect switch, activated only during active sensing cycles. Use Value: 1 µA IDSS leakage at −12 V minimizes standby current; 0.35 mm height avoids interference with stacked flex PCBs. | Use Scenario: Remote-controlled 12 V DC load switching in DIN-rail mounted sensor gateway with limited board area. IC Role / Device Role / Timing Role: Solid-state replacement for electromechanical relay in 24/7 industrial monitoring system. Use Value: −25 A peak drain current handles inrush from solenoid valves; 150 °C max Tj rating supports operation in unventilated enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar P-channel loadswitch applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| NX3001UK,115 | RDS(on) = 25 mΩ (typ.), same WLCSP6 package, VGS(th) = −0.5 V (typ.) | Slightly higher on-resistance; identical footprint and thermal performance | Select when lower gate threshold is prioritized over minimal RDS(on) reduction. |
| DMN2020LFG-7 | SO-8 package (5.0 × 6.0 mm), RDS(on) = 20 mΩ, VGS(th) = −1.0 V | Requires gate driver for 1.8 V logic; 30× larger footprint but higher power handling | Choose for prototyping or high-reliability industrial boards where thermal margin outweighs size constraints. |
Compared with NX3001UK,115, PMCM6501VPEZ offers 6 mΩ lower RDS(on) for reduced conduction loss; versus DMN2020LFG-7, it saves >95% board area but trades off ease of hand-soldering and higher continuous current rating.
Availability
PMCM6501VPEZ is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, wearable sensor node power gates, and industrial IoT edge controller load controls requiring stable component supply and long-term lifecycle support.
Supply support for PMCM6501VPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and robustness for consumer, industrial, and automotive markets.
The PMCM6501VPEZ belongs to Nexperia's TrenchMOS® WLCSP portfolio, engineered specifically for space-constrained portable electronics where ultra-small size, low on-resistance, and logic-level drivability are essential.
FAQ
What is the maximum continuous drain current for PMCM6501VPEZ at 100 °C ambient temperature?
The maximum continuous drain current is −4 A at Tamb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal limitations of the WLCSP6 package on standard FR4 PCBs with 6 cm² drain pad; actual current capability depends on PCB copper area and airflow.
Does PMCM6501VPEZ require a gate resistor for stable switching in battery-switch applications?
No external gate resistor is required for basic on/off control due to its low gate charge (19.6–29.4 nC) and integrated ESD protection. However, a 10–47 Ω series resistor is recommended when driving from high-impedance sources or to damp ringing in high-dI/dt layouts with long traces.
Can PMCM6501VPEZ be used in high-side switch configuration with 12 V battery input?
Yes-it is a P-channel MOSFET rated for −12 V VDS, making it suitable for high-side switching. Gate must be pulled below source (battery+) by at least |VGS(th)| to turn on; a dedicated high-side driver or charge pump is needed for full enhancement when source = 12 V.
How does the metal-coated backside of PMCM6501VPEZ impact thermal design?
The drain-connected metal backside must be soldered directly to a large copper pour (minimum 6 cm²) to achieve the specified Rth(j-a) = 75 K/W. Without this thermal pad, junction temperature rise exceeds safe limits at >1 A continuous current, risking premature failure.
PMCM6501VPEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFBGA, WLCSP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- P-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 12 V
- Current - Continuous Drain (Id) @ 25°C:
- 6.2A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs:
- 25mOhm @ 3A, 4.5V
- Vgs(th) (Max) @ Id:
- 900mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 29.4 nC @ 4.5 V
- Vgs (Max):
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds:
- 1400 pF @ 6 V
- FET Feature:
- -
- Power Dissipation (Max):
- 556mW (Ta), 12.5W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-WLCSP (1.48x0.98)
PMCM6501VPEZ FAQ
1.How can I place an order for PMCM6501VPEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMCM6501VPEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMCM6501VPEZ reliable?
The price and inventory of PMCM6501VPEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMCM6501VPEZ is usually 5 days.
3.What payment methods are accepted for PMCM6501VPEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMCM6501VPEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMCM6501VPEZ?
PMCM6501VPEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMCM6501VPEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMCM6501VPEZ?
For technical support, including PMCM6501VPEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMCM6501VPEZ requirements.
6.How does Aetrix verify that PMCM6501VPEZ is sourced from the original manufacturer or authorized distributors?
All PMCM6501VPEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMCM6501VPEZ meets industry standards.
7.What is the process for return or replacement of PMCM6501VPEZ?
All PMCM6501VPEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMCM6501VPEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMCM6501VPEZ part is unused and in its original packaging.
Return procedure for PMCM6501VPEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMCM6501VPEZ Tags
-
BSZ180P03NS3EGATMA1
Infineon Technologies
-
SIRA14DP-T1-GE3
Vishay Siliconix
-
AO4419
Alpha & Omega Semiconductor Inc.
-
SISA14BDN-T1-GE3
Vishay Siliconix
-
PSMN9R5-30YLC,115
Nexperia USA Inc.
-
BUK9Y21-40E,115
Nexperia USA Inc.
-
RTQ035N03HZGTR
Rohm Semiconductor
-
FDMS7680
onsemi
-
RQ3E180BNTB
Rohm Semiconductor
-
STL6N2VH5
STMicroelectronics
-
DMPH4029LFGQ-7
Diodes Incorporated
-
DMT6015LSS-13
Diodes Incorporated
Tech Hub
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
