Nexperia USA Inc. PMCM650CUNEZ

Overview

PMCM650CUNE from Nexperia is a 20 V, common-drain dual N-channel Trench MOSFET in WLCSP6 (0.98 × 1.48 × 0.35 mm) packaging, designed for bi-directional load switching in space-constrained battery management systems. It delivers 5.3 A continuous source current at V_GS = 4.5 V and 25 °C, with R_SS(on) = 40 mΩ (typ) and ESD protection > 2 kV HBM.

For engineers reviewing the PMCM650CUNE datasheet, PMCM650CUNE pinout, PMCM650CUNE application, or PMCM650CUNE equivalent, this device is selected for ultra-compact bidirectional power path control where low threshold voltage (0.7 V typ), minimal thermal resistance (45 K/W to solder point), and dual-gate independent operation are critical.

Technical Context

This dual common-drain MOSFET integrates two independent N-channel Trench FETs sharing no internal drain connection - each channel has separate gate (G1/G2) and source (S1/S2) terminals, enabling true bidirectional current flow without body diode asymmetry. The structure supports synchronous rectification and reverse-current blocking in battery protection ICs.

It operates with V_GS range of ±8 V and features sub-1 V threshold (0.7 V typ), allowing direct interface with 1.8 V and 2.5 V logic. Dynamic parameters include Q_G(tot) = 9 nC (typ), C_iss = 480 pF, and fast switching (t_r = 20 ns, t_f = 15 ns) under 6 Ω gate drive.

Key Specifications

Pinout & Package

Package: WLCSP6 (Wafer Level Chip-Sized Package), 3 × 2 bump array, dimensions 0.98 × 1.48 × 0.35 mm; metal-coated backside connected to drain potential (not accessible externally).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar bidirectional load switch applications.

Compared with NX3008UK and DMN2021UFDF, PMCM650CUNE uniquely integrates two independent common-drain channels in one die, eliminating inter-device timing skew, halving PCB footprint versus dual discrete solutions, and enabling true symmetrical conduction essential for battery protection and USB-C PD applications.

Availability

PMCM650CUNE is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power path designs, and wearable load switching requiring stable component supply, long-term lifecycle support, and wafer-level packaging consistency.

Supply support for PMCM650CUNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions, serving automotive, industrial, and consumer markets with scalable manufacturing and rigorous quality standards.

PMCM650CUNE belongs to Nexperia's TrenchMOS® load switch portfolio, engineered specifically for space-constrained, low-voltage bidirectional power control in portable and battery-powered systems.

FAQ

What is the maximum continuous current per channel at 85 °C ambient?

At T_amb = 85 °C and V_GS = 4.5 V, the continuous source current per channel is derated to 2.6 A, based on thermal limits and junction temperature cap of 150 °C. This value assumes mounting on FR4 PCB with 6 cm² copper pad for drain, per datasheet condition [1].

Can G1 and G2 be tied together for single-input control?

Yes - G1 and G2 may be connected to a shared gate drive signal to operate both channels synchronously. However, doing so forfeits independent channel control and removes the ability to implement asymmetric switching or fault-isolation schemes described in battery protection applications.

Is the drain terminal electrically accessible for external connection?

No - the drain is internally connected to the metal-coated backside of the WLCSP6 package and is not accessible via bumps or solder terminals. Current flows exclusively between S1/G1 and S2/G2 pairs through the silicon substrate to the thermal pad, which must be soldered to a PCB copper pour for thermal and electrical reference.

Does PMCM650CUNE support 1.2 V logic-level gate drive?

No - while V_GS(th) is as low as 0.4 V (min), the device does not guarantee full enhancement or specified R_SS(on) below V_GS = 1.8 V. At 1.2 V, typical R_SS(on) exceeds 100 mΩ and current capability drops significantly; use only with ≥1.8 V drive for production designs.