Nexperia USA Inc. PMCM950ENEZ

Overview

PMCM950ENE from Nexperia is a 60 V, N-channel enhancement-mode Trench MOSFET in a 9-bump Wafer Level Chip-Scale Package (WLCSP9_3x3), optimized for low-side switching with R_DS(on) = 28 mΩ at V_GS = 10 V and I_D = 3 A, 25 °C, and ESD protection >2 kV HBM. It serves as a compact, high-speed load switch in space-constrained portable electronics.

For engineers reviewing the PMCM950ENE datasheet, PMCM950ENE pinout, PMCM950ENE application, or PMCM950ENE equivalent, this device is selected for ultra-small footprint switching where thermal resistance to solder point (R_th(j-sp)) ≤10 K/W and sub-1.5 V gate threshold enable direct microcontroller drive without level shifting.

Technical Context

This MOSFET uses Trench technology to achieve low R_DS(on) and fast switching (t_d(on) = 2 ns, t_f = 17 ns) with minimal gate charge (Q_G(tot) = 30–45 nC). Its WLCSP9 package integrates three drain, five source, and one gate bump - enabling symmetrical current distribution and low-inductance layout.

The device features a 0.9–1.5 V gate threshold (V_GS(th)) and supports operation up to 150 °C junction temperature. Its normalized R_DS(on) increases only ~1.7× from 25 °C to 150 °C, ensuring stable conduction in thermally demanding environments.

Key Specifications

Pinout & Package

Package: WLCSP9_3x3 - Wafer Level Chip-Scale Package, 1.48 × 1.48 × 0.35 mm, metal-coated backside connected to drain potential.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-side switching applications.

Compared with DMN2004LKQ-7 and PMZB200UN,115, the PMCM950ENE uniquely delivers 60 V capability in a 1.48 mm² WLCSP9 package with sub-1.5 V gate threshold - making it the sole option for miniaturized, medium-voltage, logic-level-switched applications.

Availability

PMCM950ENE is available at Aetrix Electronics and suitable for high-speed line drivers, low-side load switches, and switching circuits requiring stable component supply, consistent wafer-level packaging, and traceable lot-level qualification.

Supply support for PMCM950ENE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert delivering high-performance, reliable discrete, logic, and MOSFET solutions with focus on efficiency, miniaturization, and robustness.

The PMCM950ENE belongs to Nexperia's TrenchMOS WLCSP portfolio, engineered specifically for space-constrained, high-frequency switching in portable and wearable electronics where thermal and electrical performance must coexist with sub-2 mm² footprints.

FAQ

What is the maximum continuous drain current for PMCM950ENE under standard PCB conditions?

The PMCM950ENE supports 4.8 A continuous drain current when mounted on an FR4 PCB with single-sided copper, tin-plated finish, and a 6 cm² drain pad at ambient temperature of 25 °C. Derating applies above 25 °C per the normalized I_der(%) curve in Figure 3, reaching 3 A at 100 °C ambient.

Can PMCM950ENE be driven directly by a 1.8 V GPIO without a level shifter?

Yes - its gate threshold voltage (V_GS(th)) ranges from 0.9 V to 1.5 V at 25 °C, and R_DS(on) remains 47 mΩ (max) at V_GS = 4.5 V and I_D = 3 A. At 1.8 V drive, the device operates in linear mode with predictable V_SD and is suitable for analog current sinking or soft-start control.

How is thermal performance affected by PCB layout for this WLCSP device?

Thermal resistance from junction to solder point (R_th(j-sp)) is 5–10 K/W, but junction-to-ambient (R_th(j-a)) varies from 130 K/W (free air) to 42 K/W with a 6 cm² drain pad. Use the recommended reflow footprint (Figure 20) and maximize exposed copper area under the metal-coated backside to achieve rated 12.5 W power dissipation.

Does PMCM950ENE include integrated body diode functionality, and what is its forward voltage?

Yes - it incorporates a monolithic source-drain body diode with V_SD = 0.7–1.2 V at I_S = 1.4 A and T_j = 25 °C. This diode supports freewheeling in inductive switching applications and reverse polarity protection when used in low-side configurations.