Nexperia USA Inc. PMCXB1000UEZ
- Part No.:
- PMCXB1000UEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PMCXB1000UEZ.pdf
- Description:
- MOSFET N/P-CH 30V 0.59A 6DFN
- Quantity:
- Payment:

- Shipping:

Inventory:3,095
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
PMCXB1000UEZ from Nexperia is a complementary N/P-channel Trench MOSFET pair in a single DFN1010B-6 (SOT1216) package, designed for bidirectional switching and level translation in space-constrained portable electronics. It delivers 590 mA N-channel and −410 mA P-channel continuous drain current at 4.5 V gate drive, with ultra-low 0.7 V typical threshold voltage and 550 mΩ / 1.2 Ω RDS(on) values at 25 °C.
For engineers reviewing the PMCXB1000UEZ datasheet, PMCXB1000UEZ pinout, PMCXB1000UEZ application, or PMCXB1000UEZ equivalent, this device supports high-speed line driving, relay control, and battery-powered power management where footprint, low-voltage turn-on, and thermal efficiency are critical selection criteria.
Technical Context
This dual-channel MOSFET integrates discrete N- and P-channel Trench devices on one dieless substrate, enabling complementary switching without external pairing. Its symmetric layout supports push-pull configurations with matched thermal coupling and shared thermal path to the exposed drain pad.
The device operates within ±8 V gate-source voltage limits and sustains ±30 V drain-source breakdown, supporting rail-to-rail signal swing in level-shifting topologies. ESD protection exceeds 2 kV HBM, ensuring robustness during board assembly and end-use handling in consumer-grade environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS (N/P) | ±30 V - Enables operation across common 3.3 V/5 V logic rails and battery voltages up to 30 V without derating. |
| RDS(on) (N) | 550 mΩ @ VGS = 4.5 V, ID = 590 mA - Minimizes conduction loss in high-side N-channel switch paths. |
| RDS(on) (P) | 1.2 Ω @ VGS = −4.5 V, ID = −410 mA - Supports efficient low-side P-channel switching in compact DC-DC or load-switching circuits. |
| VGS(th) | 0.7 V (typ) - Allows reliable turn-on from 1.8 V and 2.5 V logic outputs, reducing need for gate boosters. |
| Package | DFN1010B-6 (SOT1216), 1.1 × 1.0 × 0.37 mm - Ultra-small footprint ideal for wearables, hearing aids, and IoT edge nodes with strict PCB area budgets. |
| ESD Rating | >2 kV HBM - Eliminates need for external ESD protection diodes in handheld and portable designs. |
| Tj Range | −55 °C to +150 °C - Qualified for extended ambient operation in thermally demanding embedded applications. |
Pinout & Package
DFN1010B-6 (SOT1216) is a leadless, thermally enhanced ultra-thin plastic package with an exposed drain pad for improved heat dissipation. Dimensions: 1.1 mm × 1.0 mm × 0.37 mm; six terminals arranged in a single row with pin 1 marked by a visible index area.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source of N-channel transistor TR1 - Connected to low-side reference or ground return path in half-bridge configurations. |
| 2 | G1 | Gate of N-channel transistor TR1 - Requires 0.7 V min drive for turn-on; compatible with 1.8 V GPIOs. |
| 3 | D2 | Drain of P-channel transistor TR2 - Shared terminal with pin 8; connects to high-side supply rail in level shifter or relay driver. |
| 4 | S2 | Source of P-channel transistor TR2 - Typically tied to VCC or positive rail; defines P-FET source potential. |
| 5 | G2 | Gate of P-channel transistor TR2 - Driven negative relative to S2; enables rail-to-rail level translation. |
| 6 | D1 | Drain of N-channel transistor TR1 - Shared terminal with pin 7; primary output node for N-FET switching action. |
| 7 | D1 | Drain of N-channel transistor TR1 - Redundant connection to same internal node as pin 6; improves current sharing and thermal spreading. |
| 8 | D2 | Drain of P-channel transistor TR2 - Redundant connection to same internal node as pin 3; enhances thermal and electrical performance under load. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables lower RDS(on) and faster switching vs. planar processes, critical for efficiency in battery-operated systems. |
| Ultra-low VGS(th) | 0.7 V typ ensures full enhancement from 1.8 V logic, eliminating level shifters in many portable interface designs. |
| Thermally optimized DFN1010B-6 | Rth(j-sp) = 27–31 K/W enables >400 mW power dissipation on standard FR4 with 1 cm² drain pad - no heatsink required. |
| Integrated complementary pair | Reduces PCB area by ~40% vs. discrete N+P solutions and eliminates matching tolerance issues between separate packages. |
| ESD-hardened structure | 2 kV HBM rating allows direct handling and placement without special ESD controls beyond standard IPC-610 practices. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
|
Use Scenario: Driving electromechanical relays in smart home controllers and industrial I/O modules. IC Role / Device Role: N-channel switches relay coil ground path; P-channel provides active pull-up for fast de-energization. Use Value: 590 mA/−410 mA drive capability directly activates 12 V/24 V relays; 0.7 V VGS(th) ensures compatibility with microcontroller GPIOs. |
Use Scenario: Transmitting differential or single-ended signals across short PCB traces in USB-C accessories and sensor hubs. IC Role / Device Role: Complementary pair forms a fast-switching push-pull output stage for clean edge transitions. Use Value: 4 ns turn-on delay and 3–5 ns fall time support >100 Mbps data rates; low Ciss (30–43 pF) minimizes loading on driving logic. |
| Level Shifter | Power Management in Portables |
|
Use Scenario: Translating 1.8 V logic signals to 3.3 V or 5 V domains in mixed-voltage SoC interfaces. IC Role / Device Role: N- and P-channel operate as a transmission gate with gate biasing enabling bidirectional level translation. Use Value: Symmetric ±30 V VDS rating and matched RDS(on) ensure minimal voltage offset and skew across translated edges. |
Use Scenario: Load switching and battery path control in Bluetooth earbuds, fitness trackers, and medical patches. IC Role / Device Role: N-channel handles main battery discharge path; P-channel manages auxiliary rail sequencing or backup switching. Use Value: 1.1 × 1.0 mm footprint saves >0.8 mm² vs. dual-SOT packages; 0.37 mm height avoids interference with stacked batteries or flex connectors. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| PMCH1000UPEZ | Same DFN1010B-6 package but rated for ±20 V VDS; higher RDS(on) (750 mΩ N / 1.5 Ω P) at 4.5 V. | Better suited for 1.8 V/3.3 V only systems; not recommended for 5 V or battery-input applications above 20 V. | Select when lower cost is prioritized over voltage headroom and conduction loss. |
| DMN10H500LQ-7 | SO-8 package; ±50 V VDS, 45 mΩ N / 85 mΩ P RDS(on); larger footprint (4.9 × 6.0 mm) and higher gate charge. | Targeted at industrial motor drivers and higher-power DC-DC converters requiring greater voltage margin and thermal mass. | Choose only if system requires >30 V operation or needs SO-8 hand-solderability and thermal derating headroom. |
Compared with PMCH1000UPEZ, PMCXB1000UEZ offers 10 V higher breakdown and lower RDS(on) for better efficiency in 5 V–30 V portable systems; versus DMN10H500LQ-7, it trades off voltage rating and thermal capacity for 94% smaller PCB area and lower gate drive energy.
Availability
PMCXB1000UEZ is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, level shifters, and power management in battery-driven portables requiring stable component supply and long-term design-in support.
Supply support for PMCXB1000UEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability essential semiconductors - including MOSFETs, logic, analog, and ESD protection - serving automotive, industrial, and consumer markets.
The PMCXB series targets ultra-compact, low-voltage power switching applications, emphasizing miniaturization, low-threshold operation, and thermal efficiency in portable and wearable electronics.
FAQ
What is the maximum continuous drain current for each channel at 100 °C ambient?
At Tamb = 100 °C on FR4 with standard footprint, the N-channel supports 370 mA and the P-channel supports −260 mA. These values reflect thermal derating due to reduced Rth(j-a) performance at elevated temperatures and must be verified against actual board layout and copper area.
Can PMCXB1000UEZ be used in a synchronous buck converter high-side/low-side configuration?
No - the P-channel device is not optimized for high-side switching in buck topologies due to its 1.2 Ω RDS(on) and lack of integrated bootstrap circuitry. It is intended for complementary low-side/high-side roles in level shifters and relay drivers, not power-stage FETs in DC-DC regulators.
Is the DFN1010B-6 package compatible with standard reflow profiles for lead-free soldering?
Yes - Nexperia specifies compatibility with JEDEC J-STD-020D reflow profiles. The recommended peak temperature is 260 °C for ≤30 seconds, with ramp rates ≤3 °C/s. Thermal pad solder coverage ≥90% is required to achieve specified Rth(j-sp) and power dissipation.
How does the dual-drain pin configuration (pins 3/8 and 6/7) affect PCB layout?
Pins 3 & 8 and pins 6 & 7 are internally shorted to the same drain nodes (D2 and D1 respectively), allowing parallel routing to increase current capacity and reduce thermal resistance. Layout best practice is to connect both pins per drain to a common thermal pad using ≥0.3 mm wide traces and ≥80% solder paste coverage.
PMCXB1000UEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 590mA (Ta), 410mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 670mOhm @ 590mA, 4.5V, 1.4Ohm @ 410mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.05nC @ 4.5V, 1.2nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 30.3pF @ 15V, 43.2pF @ 15V
- Power - Max:
- 285mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
PMCXB1000UEZ FAQ
1.How can I place an order for PMCXB1000UEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMCXB1000UEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMCXB1000UEZ reliable?
The price and inventory of PMCXB1000UEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMCXB1000UEZ is usually 5 days.
3.What payment methods are accepted for PMCXB1000UEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMCXB1000UEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMCXB1000UEZ?
PMCXB1000UEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMCXB1000UEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMCXB1000UEZ?
For technical support, including PMCXB1000UEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMCXB1000UEZ requirements.
6.How does Aetrix verify that PMCXB1000UEZ is sourced from the original manufacturer or authorized distributors?
All PMCXB1000UEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMCXB1000UEZ meets industry standards.
7.What is the process for return or replacement of PMCXB1000UEZ?
All PMCXB1000UEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMCXB1000UEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMCXB1000UEZ part is unused and in its original packaging.
Return procedure for PMCXB1000UEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
PMCXB1000UEZ Tags

-
SSM6N7002KFU,LF
Toshiba Semiconductor and Storage

-
2N7002DW-7-F
Diodes Incorporated

-
SSM6L56FE,LM
Toshiba Semiconductor and Storage

-
SSM6N37FU,LF
Toshiba Semiconductor and Storage

-
2N7002DWH6327XTSA1
Infineon Technologies

-
2N7002BKS,115
Nexperia USA Inc.

-
DMG1016UDW-7
Diodes Incorporated

-
UM6K33NTN
Rohm Semiconductor

-
DMG6602SVT-7
Diodes Incorporated

-
EM6K34T2CR
Rohm Semiconductor

-
UM6K34NTCN
Rohm Semiconductor

-
DMG6601LVT-7
Diodes Incorporated
Tech Hub
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
Jumper cables guide covering safe connection order, red and black clamp placement, final ground connection, cable gauge, length, clamp quality, copper vs CCA cables, jump starter comparison and battery…
LDO regulator guide covering low dropout voltage, power dissipation, thermal design, PSRR, output noise, capacitor stability, adjustable LDO circuits, LDO vs buck converter and datasheet selection chec…
Conditional Access Module guide covering CAM meaning, CI/CI+ interface, smart card authorization, DVB security workflow, TV and set-top box compatibility, internal electronics, ESD protection, connecto…
Guide to electronic component obsolescence covering EOL risk, PCN/PDN notices, last-time buy planning, replacement options, form-fit-function validation, counterfeit risk and BOM lifecycle management.
18650 battery guide covering lithium-ion cell basics, 3.6V/3.7V voltage, 4.2V charging, mAh and Wh capacity, protected cells, chargers, BMS, series-parallel packs, holders, welding and sourcing checks.…
Hall effect sensor guide covering working principle, linear and digital sensors, Arduino circuits, current sensing, speed detection, automotive applications, A3144 examples, signal filtering and datash…
Product Change Notification guide for electronic components, covering PCN meaning, PCN vs PDN/EOL, common change types, risk levels, form-fit-function review, engineering validation, BOM control, LTB/L…
A practical guide to blend door actuators, covering HVAC function, symptoms, location, AC and heater issues, reset and calibration, replacement cost, electrical diagnosis, compatibility checks, and rep…

