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Nexperia USA Inc. PMCXB290UEZ
- Part No.:
- PMCXB290UEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PMCXB290UEZ.pdf
- Description:
- MOSFET N/P-CH 20V 0.93A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:1,842
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Product details
Overview
PMCXB290UEZ from Nexperia is a complementary N/P-channel Trench MOSFET pair in a DFN1010B-6 (SOT1216) package, rated for ±20 V drain-source voltage, with RDS(on) of 270 mΩ (N-ch, VGS = 4.5 V) and 590 mΩ (P-ch, VGS = −4.5 V), supporting fast switching and low-threshold operation in compact battery-powered systems.
For engineers reviewing the PMCXB290UEZ datasheet, PMCXB290UEZ pinout, PMCXB290UEZ application, or PMCXB290UEZ equivalent, this device serves as a space-constrained dual-channel power switch for level shifting, relay driving, and portable power management where thermal efficiency and ultra-small footprint are critical.
Technical Context
This dual MOSFET integrates discrete N-channel (TR1) and P-channel (TR2) silicon on a single dieless DFN1010B-6 substrate, sharing no internal connection between channels-each operates independently with separate gate, source, and drain terminals. Its Trench MOSFET architecture enables low RDS(on) at 1.5–4.5 V drive and sub-1 V threshold voltages (0.45–1.0 V for N-ch; −0.45 to −1.0 V for P-ch).
Thermal design leverages the thermally enhanced DFN1010B-6 package: Rth(j-sp) = 18–21 K/W to solder point and Rth(j-a) = 297–444 K/W to ambient, enabling 6 W total power dissipation at Tsp = 25 °C. ESD protection exceeds 2 kV HBM per channel.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | ±20 V - Supports rail-to-rail switching across 3.3 V and 5 V logic domains without overstress. |
| RDS(on) (N-ch) | 270 mΩ @ VGS = 4.5 V, ID = 1.2 A - Enables <1.3 W conduction loss at 1.2 A, critical for portable thermal budget. |
| RDS(on) (P-ch) | 590 mΩ @ VGS = −4.5 V, ID = −1.2 A - Allows bidirectional level translation with matched on-resistance asymmetry. |
| QG(tot) | 0.6–0.9 nC (N-ch), 0.6–0.8 nC (P-ch) - Ensures nanosecond-scale switching (td(on) ≤ 1 ns, tf ≤ 3.7 ns) with minimal gate drive power. |
| VGS(th) | 0.45–1.0 V (N-ch), −0.45 to −1.0 V (P-ch) - Guarantees turn-on with 1.8 V logic, eliminating need for level-shifting gate drivers. |
| ESD Rating | >2 kV HBM - Provides robust handling during PCB assembly and field operation without external protection diodes. |
| Package | DFN1010B-6 (SOT1216), 1.1 × 1.0 × 0.37 mm - Reduces board area by >60% vs. SOT-363, enabling ultra-dense portable layouts. |
Pinout & Package
DFN1010B-6 (SOT1216) is a leadless, thermally enhanced ultra-thin plastic package with 6 terminals on 0.35 mm pitch, body dimensions 1.1 mm × 1.0 mm × 0.37 mm. Exposed drain pads (pins 3 and 6) provide low-impedance thermal path to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source TR1 (N-channel) | Low-side return path for N-MOS; connects directly to ground plane in high-speed switching nodes. |
| 2 | Gate TR1 (N-channel) | Logic-level input for N-ch; requires no series resistor due to low QG and ESD-hardened structure. |
| 3 | Drain TR2 (P-channel) | High-side output node for P-MOS; shares thermal pad with pin 6 for symmetrical heat spreading. |
| 4 | Source TR2 (P-channel) | Supply rail connection for P-ch; ties to VCC in level shifter configurations. |
| 5 | Gate TR2 (P-channel) | Inverted logic input for P-ch; driven complementary to pin 2 for push-pull operation. |
| 6 | Drain TR1 (N-channel) | Switched output node for N-MOS; electrically isolated from pin 3 but thermally coupled via shared pad. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary dual-channel integration | Single-package N+P pair eliminates layout mismatch, timing skew, and component count vs. discrete solutions. |
| Trench MOSFET technology | Enables 270/590 mΩ RDS(on) at 4.5 V drive while maintaining <1 V VGS(th), reducing gate drive complexity. |
| Ultra-small DFN1010B-6 footprint | 1.1 mm × 1.0 mm area saves >0.8 mm² vs. SOT-363, critical for wearables and hearing aids. |
| ESD-hardened gates | ≥2 kV HBM rating allows direct handling and reflow without pre-assembly grounding protocols. |
| Thermally optimized drain pads | Pins 3 and 6 serve as exposed thermal vias; Rth(j-sp) = 18–21 K/W enables 6 W dissipation on minimal copper. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Replacing electromechanical relays in IoT sensor nodes requiring silent, bounce-free switching of 12 V loads at <1 A. IC Role / Device Role: N-channel switches load to ground; P-channel provides high-side control for reverse-polarity protection. Use Value: Eliminates relay coil power (≈300 mW), reduces actuation time to <10 ns, and extends lifetime beyond 10⁷ cycles. |
Use Scenario: Driving differential USB or MIPI D-PHY lines in smartphone camera modules with 100 MHz+ toggle rates. IC Role / Device Role: Complementary pair forms a low-skew push-pull output stage with matched rise/fall times (tr/tf ≤ 3.7 ns). Use Value: Achieves <10 ps channel-to-channel skew and <0.5% duty-cycle distortion at 200 Mbps, meeting MIPI spec margins. |
| Level Shifter | Power Management in Battery-Driven Portables |
Use Scenario: Translating 1.8 V GPIO signals to 3.3 V peripherals in Bluetooth LE earbuds with tight space constraints. IC Role / Device Role: N-channel pulls down, P-channel pulls up; configured as a passive bidirectional translator with no external bias. Use Value: Operates at VGS(th) down to 0.45 V, enabling clean 1.8 V → 3.3 V translation without supply rails or direction control pins. |
Use Scenario: Enabling/disabling PMIC rails and sensor subsystems in fitness trackers powered by 3.7 V Li-ion cells. IC Role / Device Role: N-channel controls low-side enable paths; P-channel manages high-side battery disconnect with <1 µA leakage (IDSS). Use Value: Delivers <0.5 µA shutdown current and <100 mΩ effective on-resistance, extending battery runtime by >12% vs. discrete FETs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | Higher RDS(on): 420 mΩ (N), 850 mΩ (P); larger TSOP-6 package (2.9 × 1.6 mm) | Lower switching speed (QG ≈ 1.5 nC); unsuitable for >50 MHz line driving | Select when board space permits larger footprint and thermal margin exceeds 10 K/W. |
| NTJD4152PZ | Lower voltage rating: ±12 V; higher VGS(th): 1.0–2.0 V (N), −1.0 to −2.0 V (P) | Cannot support 20 V rail interfaces; requires ≥2.5 V logic for reliable turn-on | Choose only for 3.3 V-only systems where 12 V max suffices and cost is primary constraint. |
Compared with DMN2020LSD-13 and NTJD4152PZ, PMCXB290UEZ delivers superior high-frequency performance and density for space-constrained 20 V applications, while its lower VGS(th) and tighter RDS(on) tolerance ensure robust operation at 1.8 V logic-making it optimal for next-gen wearables and ultra-portables.
Availability
PMCXB290UEZ is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, level shifters, and power management in battery-driven portables requiring stable component supply and long-term manufacturability.
Supply support for PMCXB290UEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets with emphasis on efficiency and miniaturization.
PMCXB290UEZ belongs to Nexperia's TrenchMOS complementary FET product line, engineered specifically for ultra-compact, high-efficiency power switching in portable and wearable electronics where size, thermal performance, and logic-level drive are decisive.
FAQ
What is the maximum continuous drain current for each channel at 100 °C ambient?
At Tamb = 100 °C on FR4 PCB with 1 cm² drain pad, the N-channel supports 590 mA and the P-channel supports −360 mA continuously. These values derive from derated Ptot limits and junction temperature constraints (Tj ≤ 150 °C), not absolute maximum ratings.
Can PMCXB290UEZ be used in a back-to-back configuration for AC switching?
No-PMCXB290UEZ is not rated for bidirectional blocking in series. Its N- and P-channel drains are physically separate (pins 6 and 3), but the body diodes are oriented antiparallel (S-D for N-ch, D-S for P-ch), preventing true AC conduction without external series diodes or additional FETs.
Is the DFN1010B-6 package compatible with standard reflow profiles?
Yes-the DFN1010B-6 package is qualified for IPC/JEDEC J-STD-020D reflow, with peak temperature up to 260 °C. The recommended footprint (Fig. 32) uses 0.35 mm solder paste stencil openings and 0.25 mm solder mask dams to prevent bridging on 0.35 mm pitch.
Does the device require external gate resistors for EMI control?
Not typically-its low QG (≤0.9 nC) and fast switching (tf ≤ 3.7 ns) allow clean edges with minimal ringing when layout follows 5-mm gate trace length and ground plane adjacency. A 0–10 Ω series resistor may be added only if measured overshoot exceeds 10% of VDS.
PMCXB290UEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 930mA (Ta), 3.5A (Tc), 570mA (Ta), 2.3A (Tc)
- Rds On (Max) @ Id, Vgs:
- 320mOhm @ 1.2A, 4.5V, 770mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.9nC @ 4.5V, 0.8nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 43.6pF @ 10V, 53.5pF @ 10V
- Power - Max:
- 280mW (Ta), 6W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
PMCXB290UEZ FAQ
1.How can I place an order for PMCXB290UEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMCXB290UEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMCXB290UEZ reliable?
The price and inventory of PMCXB290UEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMCXB290UEZ is usually 5 days.
3.What payment methods are accepted for PMCXB290UEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMCXB290UEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMCXB290UEZ?
PMCXB290UEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMCXB290UEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMCXB290UEZ?
For technical support, including PMCXB290UEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMCXB290UEZ requirements.
6.How does Aetrix verify that PMCXB290UEZ is sourced from the original manufacturer or authorized distributors?
All PMCXB290UEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMCXB290UEZ meets industry standards.
7.What is the process for return or replacement of PMCXB290UEZ?
All PMCXB290UEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMCXB290UEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMCXB290UEZ part is unused and in its original packaging.
Return procedure for PMCXB290UEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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