Nexperia USA Inc. PMCXB900UEZ

Overview

PMCXB900UE from Nexperia is a complementary N/P-channel Trench MOSFET in a DFN1010B-6 (SOT1216) package, designed for bidirectional switching and level shifting in ultra-compact portable power systems. It delivers 20 V drain-source voltage rating, 600 mA N-channel and −500 mA P-channel continuous drain current, and ultra-low 0.7 V typical gate threshold voltage for efficient operation from single-cell Li-ion or alkaline supplies.

For engineers reviewing the PMCXB900UE datasheet, PMCXB900UE pinout, PMCXB900UE application, or PMCXB900UE equivalent, this device supports high-speed line driving, relay control, and battery-powered power management where space, low-voltage turn-on, and thermal efficiency are critical selection criteria.

Technical Context

This dual-channel MOSFET integrates an N-channel (TR1) and P-channel (TR2) transistor in one monolithic die with shared thermal path and matched process characteristics. Both channels use Trench MOSFET technology to achieve low R_DS(on) at sub-1.5 V gate drive and high ESD robustness (>1 kV HBM).

The device operates as a complementary pair without internal connection between channels - terminals are fully isolated except via PCB layout - enabling independent control of high-side (P-channel) and low-side (N-channel) paths in half-bridge or level-shift configurations.

Key Specifications

Pinout & Package

DFN1010B-6 (SOT1216) is a leadless, ultra-thin surface-mount package with six terminals on a 0.4 mm pitch; thermal performance is optimized via exposed drain pads (pins 1 and 6 for TR1, pins 3 and 8 for TR2 - per simplified outline in datasheet Fig. 1).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET applications.

Compared with DMN2016LFG-7 and PMZB200UNE, PMCXB900UE uniquely combines ultra-small footprint, matched complementary characteristics, and guaranteed ESD robustness - making it optimal for space-constrained, low-voltage, dual-rail portable designs where integration and reliability are prioritized over discrete flexibility.

Availability

PMCXB900UE is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, level shifters, and power management in battery-driven portables requiring stable component supply and long-term manufacturability.

Supply support for PMCXB900UE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard products including MOSFETs, logic, analog, and ESD protection devices.

PMCXB900UE belongs to Nexperia's TrenchMOS complementary FET product line, engineered specifically for miniaturized, low-voltage power control in portable and wearable electronics.

FAQ

What is the maximum continuous drain current for each channel at 100 °C ambient?

The N-channel (TR1) supports 400 mA and the P-channel (TR2) supports −300 mA at Tamb = 100 °C with FR4 PCB mounting (single-sided copper, 1 cm² drain pad). These values reflect derating due to thermal resistance and junction temperature limits (Tj ≤ 150 °C), not package current rating alone.

Can PMCXB900UE be used in a half-bridge configuration?

No - PMCXB900UE does not integrate bootstrap or level-shifting circuitry, and its P-channel source (S2) and N-channel source (S1) are electrically isolated. It can serve as discrete high-side (TR2) and low-side (TR1) switches only when driven by independently referenced gate signals and appropriate floating biasing.

Is the DFN1010B-6 package compatible with standard reflow profiles?

Yes - Nexperia specifies compatibility with IPC/JEDEC J-STD-020D reflow profiles. The recommended peak temperature is 260 °C (≤10 s above 220 °C), and the footprint in Figure 32 (0.35 mm pad width, 0.9 mm length, 0.2 mm spacing) ensures reliable solder joint formation without bridging.

How does the R_DS(on) change with gate voltage below 2.5 V?

At V_GS = 1.8 V, R_DS(on) is 845–1300 mΩ (N-ch) and 1.7–3.3 Ω (P-ch); at V_GS = 1.5 V, it rises to 1125–3000 mΩ (N-ch) and 2.3–5 Ω (P-ch). This steep increase confirms the device is optimized for ≥1.8 V drive, not sub-1.5 V ultra-low-voltage operation.