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Nexperia USA Inc. PMDPB30XN,115

Part No.:
PMDPB30XN,115
Manufacturer:
Nexperia USA Inc.
Category:
FET, MOSFET Arrays
Package:
6-UFDFN Exposed Pad
Datasheet:
AetrixPMDPB30XN,115.pdf
Description:
MOSFET 2N-CH 20V 4A 6HUSON
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,625

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Product details

Overview

PMDPB30XN from Nexperia is a dual N-channel Trench MOSFET in a DFN2020-6 (SOT1118) package, rated for 20 V drain-source voltage, 5.3 A continuous drain current per transistor at 4.5 V gate drive, and 32 mΩ typical RDS(on) at 3 A/25 °C. It serves as a compact, thermally efficient power switch in portable battery management and DC-DC conversion circuits.

For engineers reviewing the PMDPB30XN datasheet, PMDPB30XN pinout, PMDPB30XN application, or PMDPB30XN equivalent, this device is selected for high-density, low-profile dual-switching roles where thermal performance, fast switching (td(on) = 4 ns, tf = 16 ns), and ultra-thin packaging (0.65 mm max height) are critical design constraints.

Technical Context

This dual MOSFET integrates two independent N-channel enhancement-mode transistors using Trench technology, enabling synchronous rectification or complementary half-bridge operation without cross-conduction risk when driven separately. Each channel supports ±12 V gate-source voltage and exhibits sub-1 V source-drain diode forward voltage at 1.2 A.

Its thermal design relies on an exposed drain pad soldered to a 6 cm² copper mounting area on FR4 PCB, achieving 55 K/W junction-to-solder-point resistance and enabling 1170 mW continuous power dissipation at 25 °C ambient. The device operates across –55 °C to 150 °C junction temperature range.

Key Specifications

Parameter Value and Actual Design Meaning
VDS 20 V - Maximum blocking voltage per transistor; defines safe operating range in 5–12 V battery-fed systems.
RDS(on) 32 mΩ (typ) @ 4.5 V, 3 A, 25 °C - Enables <160 mW conduction loss per channel at 3 A, critical for efficiency in portable DC-DC stages.
ID 5.3 A (cont) @ 4.5 V, 25 °C - Supports dual-channel load switching up to ~5 A each with standard PCB thermal relief.
QG(tot) 14.4 nC (typ) - Low gate charge enables fast switching with modest gate driver strength (e.g., 1–2 A peak).
tf 16 ns - Fast fall time reduces switching losses in high-frequency (>1 MHz) buck converters.
VGS(th) 0.65 V (typ) - Ultra-low threshold allows reliable turn-on from 1.8 V logic, supporting modern low-voltage microcontrollers.
Tj max 150 °C - Specifies maximum junction temperature for reliability; derating required above 75 °C ambient per Fig. 1.

Pinout & Package

Package: DFN2020-6 (SOT1118), 2.0 × 2.0 × 0.65 mm, leadless, thermally enhanced with exposed drain pad.

Pin/Terminal Circuit Role Design Meaning
1 S1 Source terminal of transistor 1 - Connected to low-side return path; electrically isolated from S2.
2 G1 Gate terminal of transistor 1 - Requires separate gate drive; no internal level-shifting between G1 and G2.
3 D2 Drain terminal of transistor 2 - Internally connected to exposed pad; primary thermal path to PCB.
4 S2 Source terminal of transistor 2 - Independent return node; enables dual independent switching or half-bridge configuration.
5 G2 Gate terminal of transistor 2 - Fully isolated control input; supports asynchronous or synchronized dual-channel timing.
6 D1 Drain terminal of transistor 1 - Also tied to exposed pad; both drains share thermal mass but remain electrically separate.

Key Features

Feature Design Value
Ultra-thin DFN2020-6 package 0.65 mm max height enables use in space-constrained portable devices such as smartphones and wearables.
Exposed drain pad Reduces Rth(j-sp) to 10 K/W, allowing >1 W power handling on standard FR4 with 6 cm² copper area.
Trench MOSFET architecture Delivers 32 mΩ RDS(on) at 4.5 V drive while maintaining robust 20 V breakdown margin.
Low VGS(th) (0.65 V typ) Ensures full enhancement with 1.8 V I/O microcontrollers, eliminating need for gate boosters in low-voltage systems.
Fast switching (td(off) = 40 ns) Minimizes dead-time losses in synchronous buck topologies operating up to 2 MHz.

Applications

Charging Switch for Portable Devices DC-to-DC Converters

Use Scenario: Dual-path USB-C PD input selection with battery backup and system load switching.

IC Role / Device Role / Timing Role: Dual N-channel back-to-back switch controlling input path and battery isolation with reverse-current blocking.

Use Value: 0.8 V VSD at 1.2 A enables low-loss reverse-blocking without external Schottky diodes; 20 V rating covers 9–20 V PD profiles.

Use Scenario: High-efficiency 1.2 V/3 A synchronous buck converter in SSD power rail.

IC Role / Device Role / Timing Role: Low-side and high-side switch pair (with external high-side driver) in 1.5 MHz switching regulator.

Use Value: 14.4 nC QG(tot) and 16 ns tf reduce gate drive loss and EMI; 32 mΩ RDS(on) limits conduction loss to <500 mW per FET at full load.

Small Brushless DC Motor Drive Power Management in Battery-Driven Portables

Use Scenario: 3-phase BLDC gate driver stage for 5 V fan or haptic motor in tablet chassis.

IC Role / Device Role / Timing Role: Half-bridge leg (high- and low-side) per phase, with independent gate control for commutation timing.

Use Value: Independent G1/G2 pins allow precise dead-time control; 12 A peak drain current supports short torque bursts without thermal runaway.

Use Scenario: System power sequencing and subsystem enable/disable in medical wearable with Li-ion battery.

IC Role / Device Role / Timing Role: Dual load switch managing display backlight and sensor cluster power domains.

Use Value: Dual independent channels eliminate need for two discrete MOSFETs; 0.65 V VGS(th) ensures clean turn-on from 1.8 V PMIC outputs.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part Technical Difference Application Difference Selection Advice
DMN2020LSD-13 20 V, 6.5 A, 22 mΩ RDS(on), same DFN2020-6 package but higher gate charge (22 nC). Better conduction loss at high current, but slower switching due to higher QG; less suitable for >1 MHz designs. Select when conduction loss dominates over switching loss, e.g., in low-frequency (<500 kHz) power switches.
SI2302DDS-T1-GE3 20 V, 2.6 A, 90 mΩ RDS(on), SOT-23 package, single-channel only. Larger footprint per channel, no thermal pad, limited current; requires two devices for dual function. Choose only if board space allows SOT-23 placement and thermal budget permits higher RDS(on).

Compared with DMN2020LSD-13 and SI2302DDS-T1-GE3, PMDPB30XN uniquely balances ultra-low profile, dual-channel integration, and optimized gate charge for high-frequency portable power stages-making it preferred where PCB thickness, layout density, and 1–2 MHz switching coexist.

Availability

PMDPB30XN is available at Aetrix Electronics and suitable for charging switches in portable devices, DC-DC converters in SSDs and wearables, and power management in battery-driven medical electronics requiring stable component supply and long-term manufacturability.

Supply support for PMDPB30XN includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

The PMDPB30XN belongs to Nexperia's TrenchMOS dual-FET product line, engineered specifically for space-constrained, thermally demanding portable power applications requiring dual-channel integration and low-voltage logic compatibility.

FAQ

What is the maximum continuous drain current per channel at 100 °C ambient?

At Tamb = 100 °C, the maximum continuous drain current per channel is 2.6 A, as specified in Table 5 (Limiting values). This reflects thermal derating based on the device's Rth(j-a) of 93–107 K/W on a 6 cm² drain pad, ensuring safe operation without exceeding 150 °C junction temperature.

Can PMDPB30XN be used in a synchronous buck converter as both high-side and low-side switch?

No - PMDPB30XN contains two N-channel MOSFETs only and lacks integrated bootstrap circuitry or level-shifting. It can serve as the low-side switch directly, but the high-side requires either an external high-side driver or a P-channel device; using both channels as high-side is not feasible without gate voltage boosting beyond 20 V.

Is the exposed drain pad electrically connected to both D1 and D2 terminals?

Yes - Pins 3 (D2) and 6 (D1) are internally connected to the same exposed drain pad, forming a common thermal and electrical node for both transistors. This configuration simplifies PCB thermal design but requires that both drains operate at the same potential in the circuit.

What is the recommended solder paste stencil aperture for the DFN2020-6 package?

The recommended reflow footprint (Fig. 19) specifies 0.49 mm × 0.49 mm solder lands for pins 1–5 and 0.65 mm × 0.65 mm for the central drain pad. A 0.12 mm thick stencil with 1:1 aperture ratio is advised to ensure sufficient paste volume on the thermal pad while avoiding bridging on fine-pitch terminals.

PMDPB30XN,115 Specifications

Product attributes
Attribute value
Manufacturer:
Nexperia USA Inc.
Series:
-
Package/Case:
6-UFDFN Exposed Pad
Packaging:
Tape & Reel (TR)
Product Status:
Active
Technology:
MOSFET (Metal Oxide)
Configuration:
2 N-Channel (Dual)
FET Feature:
Logic Level Gate
Drain to Source Voltage (Vdss):
20V
Current - Continuous Drain (Id) @ 25°C:
4A
Rds On (Max) @ Id, Vgs:
40mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:
900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
21.7nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:
660pF @ 10V
Power - Max:
490mW
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
6-HUSON (2x2)

PMDPB30XN,115 FAQ

1.How can I place an order for PMDPB30XN,115 through Aetrix?

Please submit a Request for Quotation (RFQ) for PMDPB30XN,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMDPB30XN,115 reliable?

The price and inventory of PMDPB30XN,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDPB30XN,115 is usually 5 days.

3.What payment methods are accepted for PMDPB30XN,115?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDPB30XN,115 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMDPB30XN,115?

PMDPB30XN,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMDPB30XN,115 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMDPB30XN,115?

For technical support, including PMDPB30XN,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDPB30XN,115 requirements.

6.How does Aetrix verify that PMDPB30XN,115 is sourced from the original manufacturer or authorized distributors?

All PMDPB30XN,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDPB30XN,115 meets industry standards.

7.What is the process for return or replacement of PMDPB30XN,115?

All PMDPB30XN,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMDPB30XN,115, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMDPB30XN,115 part is unused and in its original packaging.

Return procedure for PMDPB30XN,115:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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