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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Nexperia USA Inc. PMDPB30XNZ

Name: PMDPB30XNZ
Brand: Nexperia USA Inc.
SKU: PMDPB30XNZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMDPB30XNZ

Manufacturer:: Nexperia USA Inc.

Category:: FET, MOSFET Arrays

Package:: 6-UFDFN Exposed Pad

Datasheet:: PMDPB30XNZ.pdf

Description:: MOSFET 2N-CH 20V 4A 6HUSON

Quantity:: RFQ Add To RFQ list

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Inventory:3,965

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Product details

Overview

PMDPB30XNZ from Nexperia is a dual N-channel Trench MOSFET in DFN2020-6 (SOT1118) package, rated for 20 V drain-source voltage, 5.3 A continuous drain current at 25 °C, and 32 mΩ typical R_DS(on) at V_GS = 4.5 V and I_D = 3 A. It serves as a compact, thermally efficient charging switch or synchronous rectifier in portable power management circuits.

For engineers reviewing the PMDPB30XNZ datasheet, PMDPB30XNZ pinout, PMDPB30XNZ application, or PMDPB30XNZ equivalent, key selection criteria include its dual-channel layout, ultra-thin 2 × 2 × 0.65 mm footprint, exposed drain pad for thermal conduction, and verified performance in battery-driven DC-DC converters and motor drive stages.

Technical Context

This device integrates two independent N-channel enhancement-mode MOSFETs fabricated using Trench technology, enabling fast switching (t_d(on) = 4 ns, t_f = 16 ns) and low gate charge (Q_G(tot) = 14.4–21.7 nC). Each transistor features a gate-source threshold voltage of 0.4–0.9 V and supports ±12 V gate drive.

The dual configuration allows complementary half-bridge or load-switch topologies without external isolation. Thermal resistance is optimized via an exposed drain pad-R_th(j-sp) = 10–15 K/W-enabling reliable operation up to 150 °C junction temperature under FR4 PCB mounting with 6 cm² drain pad.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	20 V maximum - defines safe operating voltage range for battery-powered systems up to 2-cell Li-ion (8.4 V) with margin
R_DS(on)	32 mΩ typ @ V_GS = 4.5 V, I_D = 3 A - enables <100 mW conduction loss per FET at 3 A, critical for efficiency in portable devices
I_D (cont)	5.3 A @ T_amb = 25 °C, t ≤ 5 s - supports short-duration peak loads in charging and motor startup
Q_G(tot)	14.4–21.7 nC - determines gate driver strength requirement and switching loss in high-frequency DC-DC applications
V_GS(th)	0.4–0.9 V @ I_D = 250 µA - ensures turn-on compatibility with 1.8 V and 3.3 V logic-level controllers
T_j max	150 °C - sets thermal design boundary for sustained operation in sealed portable enclosures

Pinout & Package

Package: DFN2020-6 (SOT1118), 2.0 × 2.0 × 0.65 mm, leadless, ultra-thin, with exposed drain pad for thermal dissipation.

Pin/Terminal	Circuit Role	Design Meaning
1	S1	Source terminal of transistor 1 - connects to low-side return path in half-bridge or load-switch configuration
2	G1	Gate terminal of transistor 1 - requires low-impedance drive to achieve specified 4 ns turn-on delay
3	D2	Drain terminal of transistor 2 - electrically tied to exposed pad; primary thermal and current path for TR2
4	S2	Source terminal of transistor 2 - isolated from S1; enables independent control of dual switches
5	G2	Gate terminal of transistor 2 - fully decoupled from G1; supports asynchronous or complementary drive schemes
6	D1	Drain terminal of transistor 1 - electrically tied to exposed pad; shares thermal pad with D2 for dual-device heat spreading

Key Features

Feature	Design Value
Ultra-thin DFN2020-6 package	2.0 × 2.0 × 0.65 mm footprint - saves board space in slim portable designs where height clearance is constrained to <0.7 mm
Exposed drain pad	Thermal resistance R_th(j-sp) = 10–15 K/W - reduces junction-to-solder-point temperature rise by >50% vs. standard DFN without thermal pad
Trench MOSFET architecture	Low Q_GD/Q_G ratio (≈10%) - improves switching robustness and reduces Miller-induced shoot-through risk in synchronous rectifiers
Fast switching performance	t_r = 15 ns, t_f = 16 ns - supports >1 MHz DC-DC operation while maintaining <5% switching loss contribution at 3 A

Applications

Charging Switch for Portable Devices

DC-DC Converter Synchronous Rectifier

Use Scenario: Bidirectional USB-C power path control in smartphones and tablets managing 5–9 V input and battery charge/discharge.

IC Role / Device Role / Timing Role: Dual N-channel MOSFET used as back-to-back switch to block reverse current and enable controlled charge routing.

Use Value: 32 mΩ R_DS(on) limits voltage drop to <160 mV at 5 A, preserving system efficiency and minimizing thermal buildup in sealed chassis.

Use Scenario: Secondary-side synchronous rectification in 3.3 V/5 V buck converters powering SoCs in wearables and IoT edge nodes.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier replacing Schottky diode; driven by controller's phase-complementary gate signal.

Use Value: 14.4 nC total gate charge enables clean 1 MHz switching with standard 1-A peak gate drivers, reducing conduction loss by 40% vs. 0.3 V diode drop.

Small Brushless DC Motor Driver

Power Management in Battery-Driven Portables

Use Scenario: Half-bridge leg in 3-phase BLDC driver for compact cooling fans or haptic actuators in handheld medical instruments.

IC Role / Device Role / Timing Role: High-side and low-side switch pair (TR1 + TR2) in one half-bridge leg; gate timing coordinated to avoid cross-conduction.

Use Value: Matched V_GS(th) (0.4–0.9 V) and R_DS(on) ensure balanced on-resistance and thermal sharing between channels during PWM commutation.

Use Scenario: Load switch controlling power to auxiliary subsystems (e.g., display backlight, sensor hub) in battery-powered asset trackers.

IC Role / Device Role / Timing Role: Dual independent load switch enabling selective power gating of two non-interacting peripherals.

Use Value: Independent S1/G1/D1 and S2/G2/D2 terminals allow separate enable control, eliminating need for two discrete MOSFETs and saving >1.5 mm² PCB area.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2020LSD-13	Same DFN2020-6 package; higher R_DS(on) (45 mΩ typ @ 4.5 V); lower I_D rating (4.2 A)	Less suitable for 5 A peak charging paths; acceptable for <3.5 A DC-DC secondary side	Select when cost sensitivity outweighs 15% conduction loss penalty and thermal margin is ample
AOB2018	SO-8 package (larger, 4.9 × 6.0 mm); lower R_DS(on) (18 mΩ); higher I_D (7.5 A)	Requires more board space and lacks ultra-thin profile; better for industrial-grade thermal cycling	Choose when higher current handling and legacy SO-8 assembly compatibility are prioritized over miniaturization

Compared with DMN2020LSD-13 and AOB2018, PMDPB30XNZ uniquely balances ultra-compact size, sub-35 mΩ on-resistance, and dual-channel integration-making it optimal for space-constrained, battery-efficiency-critical portable designs where height and thermal pad area are tightly constrained.

Availability

PMDPB30XNZ is available at Aetrix Electronics and suitable for portable device charging switches, DC-DC converter synchronous rectifiers, and small BLDC motor drives requiring stable component supply across high-mix, low-volume production runs.

Supply support for PMDPB30XNZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies, delivering high-performance, reliable discrete and logic devices for consumer, computing, and industrial markets.

This part belongs to Nexperia's TrenchMOS® dual N-channel portfolio, engineered specifically for space- and thermally constrained battery-powered applications demanding low R_DS(on), fast switching, and minimal PCB footprint.

FAQ

What is the maximum allowable gate-source voltage for PMDPB30XNZ?

The absolute maximum V_GS is ±12 V at T_j = 25 °C, per the limiting values table. Operation beyond this risks irreversible gate oxide damage. For reliable long-term use, gate drive should be clamped to ≤±10 V, especially in environments with ESD or transient coupling.

Can PMDPB30XNZ be used in a high-side switch configuration?

No-PMDPB30XNZ contains two N-channel MOSFETs only and lacks integrated level-shifting or bootstrap circuitry. As a result, it cannot self-drive in high-side configurations without external gate voltage boosting. It is intended for low-side switching, back-to-back arrangements, or half-bridge legs with dedicated high-side drivers.

How does the exposed drain pad affect PCB layout requirements?

The exposed pad must be soldered to a minimum 6 cm² copper area on the PCB's bottom layer, single-sided, tin-plated, to achieve the specified R_th(j-a) = 93–107 K/W. Smaller pads increase thermal resistance by up to 2×, risking junction overheating above 1.2 W dissipation. Thermal vias to inner ground planes are recommended but not included in the datasheet's baseline spec.

Is PMDPB30XNZ automotive qualified?

No-this device is not AEC-Q101 qualified and is explicitly designated for consumer and industrial portable applications. Nexperia's documentation states that non-automotive qualified products are unsuitable for safety-critical or life-support systems, and no automotive stress testing or qualification data is provided for PMDPB30XNZ.

PMDPB30XNZ Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UFDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 20V

Current - Continuous Drain (Id) @ 25°C:: 4A (Ta)

Rds On (Max) @ Id, Vgs:: 40mOhm @ 3A, 4.5V

Vgs(th) (Max) @ Id:: 900mV @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: -

Input Capacitance (Ciss) (Max) @ Vds:: 660pF @ 10V

Power - Max:: 490mW (Ta), 8.33W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 6-HUSON (2x2)

PMDPB30XNZ FAQ

1.How can I place an order for PMDPB30XNZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMDPB30XNZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMDPB30XNZ reliable?

The price and inventory of PMDPB30XNZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDPB30XNZ is usually 5 days.

3.What payment methods are accepted for PMDPB30XNZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDPB30XNZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMDPB30XNZ?

PMDPB30XNZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMDPB30XNZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMDPB30XNZ?

For technical support, including PMDPB30XNZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDPB30XNZ requirements.

6.How does Aetrix verify that PMDPB30XNZ is sourced from the original manufacturer or authorized distributors?

All PMDPB30XNZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDPB30XNZ meets industry standards.

7.What is the process for return or replacement of PMDPB30XNZ?

All PMDPB30XNZ units undergo pre-shipment inspection (PSI). If there is an issue with PMDPB30XNZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMDPB30XNZ part is unused and in its original packaging.

Return procedure for PMDPB30XNZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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