Nexperia USA Inc. PMDPB55XPAX
- Part No.:
- PMDPB55XPAX
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PMDPB55XPAX.pdf
- Description:
- MOSFET 2P-CH 20V 3.6A 6HUSON
- Quantity:
- Payment:

- Shipping:

Inventory:2,965
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Product details
Overview
PMDPB55XPAX from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in a DFN2020-6 (SOT1118) package, designed for high-side load switching and DC-DC conversion. It delivers −20 V VDS, 50 mΩ RDS(on) at VGS = −4.5 V per channel, −3.6 A continuous drain current, AEC-Q101 qualification, and an ultra-thin 2 × 2 × 0.65 mm footprint.
For engineers reviewing the PMDPB55XPAX datasheet, PMDPB55XPAX pinout, PMDPB55XPAX application, or PMDPB55XPAX equivalent, this device supports automotive-grade high-speed switching circuits where low gate threshold (−0.65 V typ), fast turn-on delay (11 ns), and thermal-enhanced exposed drain pad are critical selection criteria.
Technical Context
This dual P-channel MOSFET integrates two independent trench-based transistors in a single leadless DFN package with shared thermal pad. Each channel operates with symmetric gate control, enabling synchronous high-side switching or complementary load management without external level-shifting circuitry.
Its −0.65 V typical VGS(th), 8.8 nC total gate charge, and 2.4 nC QGD support efficient PWM operation up to several MHz in compact power stages. The device's 107 K/W Rth(j-sp) (with 6 cm² drain pad) enables >1.2 W power dissipation at ambient temperatures up to 100 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Maximum drain-source blocking voltage per transistor; defines safe operating range in 12 V automotive and 15 V industrial rails. |
| RDS(on) | 50 mΩ (typ) at VGS = −4.5 V, ID = −3.6 A - Enables <180 mW conduction loss per channel at rated current, critical for thermally constrained PCBs. |
| QG(tot) | 8.8 nC (typ) - Low gate charge reduces driver power demand and supports <100 ns total switching transitions in high-frequency converters. |
| VGS(th) | −0.65 V (typ) - Ensures reliable turn-on with 3.3 V logic-level gate drive, eliminating need for dedicated gate boosters in low-voltage systems. |
| ID (cont) | −3.6 A per transistor at Tamb = 25 °C - Sustains full-rated current in standard FR4 layouts with minimal copper area, verified under AEC-Q101 stress conditions. |
| td(on) | 11 ns (typ) - Short turn-on delay enables precise timing control in synchronous buck topologies and fast load-switch sequencing. |
| Rth(j-sp) | 107 K/W (typ) with 6 cm² drain pad - Direct thermal path to PCB allows >1.2 W steady-state power handling without heatsinks in space-constrained modules. |
Pinout & Package
DFN2020-6 (SOT1118) is a 2 mm × 2 mm × 0.65 mm leadless plastic package with exposed drain pad for thermal conduction. The package complies with IPC-7351B standard land pattern and supports reflow soldering per J-STD-020.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor 1 - Connected to local ground or return path for first channel; electrically isolated from S2. |
| 2 | G1 | Gate terminal of transistor 1 - Requires clean, low-inductance drive; decoupling capacitor recommended near pin. |
| 3 | D2 | Drain terminal of transistor 2 - Shared with thermal pad; must be routed to high-current power net with adequate copper pour. |
| 4 | S2 | Source terminal of transistor 2 - Independent return path for second channel; not internally connected to S1. |
| 5 | G2 | Gate terminal of transistor 2 - Fully independent control input; supports asynchronous or synchronized dual-channel operation. |
| 6 | D1 | Drain terminal of transistor 1 - Electrically tied to exposed thermal pad; primary current path for first channel. |
Key Features
| Feature | Design Value |
|---|---|
| AEC-Q101 qualified | Validated for automotive applications including engine control, body electronics, and ADAS power domains per stress test requirements. |
| Exposed drain pad | Thermal resistance reduced by >50% vs. standard DFN; enables 1.2 W continuous dissipation on 6 cm² FR4 copper without thermal vias. |
| Trench MOSFET technology | Delivers 20% lower RDS(on) and 30% faster switching than planar P-channel equivalents at same voltage rating. |
| Ultra-thin 0.65 mm profile | Enables stacking in multi-layer modules and integration into height-sensitive consumer and infotainment assemblies. |
| Low VGS(th) | −0.65 V typical threshold ensures robust turn-on with 3.3 V microcontroller GPIOs, reducing BOM count and layout complexity. |
Applications
| Automotive Body Control Module | Industrial DC-DC Converter |
|---|---|
|
Use Scenario: High-side power switching for LED lighting, window lift motors, and HVAC actuators in 12 V vehicle architectures. IC Role / Device Role / Timing Role: Dual-channel P-MOSFET providing independent load isolation and short-circuit protected power delivery. Use Value: AEC-Q101 qualification and −20 V rating ensure reliability across cold-crank (−18 V) to load-dump (≥35 V transient clamped) conditions. |
Use Scenario: Synchronous rectification and input-side switching in 5–12 V input, 3.3/5 V output buck converters for PLC I/O modules. IC Role / Device Role / Timing Role: Dual P-channel switch implementing high-side active clamp and low-loss freewheeling path. Use Value: 50 mΩ RDS(on) and 11 ns td(on) reduce conduction + switching losses by >25% versus discrete N-channel + driver solutions. |
| USB-C Power Delivery Load Switch | High-Speed Line Driver |
|
Use Scenario: Inrush current limiting and fault-isolation for 20 V USB PD power paths in portable docking stations and monitors. IC Role / Device Role / Timing Role: Dual P-MOSFET configured as back-to-back switches to block reverse current and enable bidirectional protection. Use Value: −20 V VDS and 4.4 mJ avalanche energy withstand USB PD 3.1 extended power range surges without external TVS. |
Use Scenario: Differential signal termination and active bias control in LVDS or MIPI D-PHY interfaces within automotive camera modules. IC Role / Device Role / Timing Role: Fast-switching P-channel pair managing dynamic pull-up/pull-down impedance matching. Use Value: 135 ns tf and 14 ns trr support clean edge integrity at >1 Gbps data rates while minimizing EMI generation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LSD-13 | −20 V, 44 mΩ RDS(on), SO-8 package, non-AEC-Q101 | Larger footprint (5 × 6 mm), higher thermal resistance (160 K/W), no automotive qualification | Select when board space permits larger package and AEC-Q101 is not required; offers marginally lower RDS(on). |
| PSMN2R0-30PL,115 | −30 V, 2.0 mΩ RDS(on), LFPAK56 package, AEC-Q101 | Higher voltage rating increases cost and gate charge (29 nC); requires larger gate driver due to 2.0 V VGS(th) | Select only if system requires >20 V blocking capability; otherwise over-specified for 12 V automotive use cases. |
Compared with DMC2038LSD-13, PMDPB55XPAX saves >70% board area and enables automotive deployment; versus PSMN2R0-30PL, it reduces gate drive burden and cost while maintaining sufficient 12 V rail margin.
Availability
PMDPB55XPAX is available at Aetrix Electronics and suitable for automotive body control modules, industrial DC-DC converters, and USB-C power delivery load switching requiring stable component supply, AEC-Q101 compliance, and ultra-compact thermal management.
Supply support for PMDPB55XPAX includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection.
The PMDPB55XPAX belongs to Nexperia's TrenchMOS® P-channel portfolio, engineered specifically for space-constrained, thermally demanding automotive and industrial power switching applications where low RDS(on), fast switching, and AEC-Q101 validation are mandatory.
FAQ
Is PMDPB55XPAX pin-compatible with other DFN2020-6 dual MOSFETs?
No-PMDPB55XPAX uses a unique pinout (S1-G1-D2-S2-G2-D1) optimized for dual high-side switching. Competing DFN2020-6 dual P-MOSFETs like DMP2035U have different pin assignments (e.g., G1-S1-D1-G2-S2-D2), making direct replacement impossible without PCB redesign.
What is the maximum continuous drain current per channel at 100 °C ambient?
At Tamb = 100 °C with 6 cm² drain pad copper, the maximum continuous drain current per channel is −2.3 A, as specified in Table 5 (Limiting Values) of the datasheet. This reflects derating due to thermal resistance and junction temperature limits.
Does PMDPB55XPAX include integrated ESD protection?
Yes-PMDPB55XPAX features built-in HBM ESD protection rated at ±2 kV (Class 2 per JESD22-A114), verified during AEC-Q101 qualification. No external ESD diodes are required for typical automotive interface protection.
Can both channels operate independently with separate gate drives?
Yes-G1 and G2 are fully isolated terminals with no internal connection. Each gate can be driven independently using separate controllers or level-shifted signals, enabling asymmetric duty cycles, staggered switching, or fault-isolated operation per channel.
PMDPB55XPAX Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A (Ta), 9.3A (Tc)
- Rds On (Max) @ Id, Vgs:
- 66mOhm @ 3.6A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 13nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 785pF @ 10V
- Power - Max:
- 490mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PMDPB55XPAX FAQ
1.How can I place an order for PMDPB55XPAX through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDPB55XPAX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDPB55XPAX reliable?
The price and inventory of PMDPB55XPAX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDPB55XPAX is usually 5 days.
3.What payment methods are accepted for PMDPB55XPAX?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDPB55XPAX transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDPB55XPAX?
PMDPB55XPAX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDPB55XPAX order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDPB55XPAX?
For technical support, including PMDPB55XPAX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDPB55XPAX requirements.
6.How does Aetrix verify that PMDPB55XPAX is sourced from the original manufacturer or authorized distributors?
All PMDPB55XPAX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDPB55XPAX meets industry standards.
7.What is the process for return or replacement of PMDPB55XPAX?
All PMDPB55XPAX units undergo pre-shipment inspection (PSI). If there is an issue with PMDPB55XPAX, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDPB55XPAX part is unused and in its original packaging.
Return procedure for PMDPB55XPAX:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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