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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

Nexperia USA Inc. PMDPB56XNEAX

Name: PMDPB56XNEAX
Brand: Nexperia USA Inc.
SKU: PMDPB56XNEAX
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMDPB56XNEAX

Manufacturer:: Nexperia USA Inc.

Category:: FET, MOSFET Arrays

Package:: 6-UDFN Exposed Pad

Datasheet:: PMDPB56XNEAX.pdf

Description:: MOSFET 2N-CH 30V 3.1A 6DFN

Quantity:: RFQ Add To RFQ list

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Inventory:16,558

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Product details

Overview

PMDPB56XNEA from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in a DFN2020D-6 (SOT1118D) package, rated for 30 V drain-source voltage, 3.1 A continuous drain current per transistor at 25 °C, and 55 mΩ typical R_DS(on) at V_GS = 4.5 V - used as low-side loadswitches in automotive LED drivers and power management modules.

For engineers reviewing the PMDPB56XNEA datasheet, PMDPB56XNEA pinout, PMDPB56XNEA application, or PMDPB56XNEA equivalent, key selection criteria include its AEC-Q101 qualification, 2 × 2 × 0.65 mm leadless thermally enhanced package, dual independent channel configuration, and ESD protection >2 kV HBM - critical for space-constrained automotive and industrial switching designs.

Technical Context

This device integrates two fully isolated N-channel MOSFETs in a single ultra-thin DFN package, each with independently accessible gate, source, and drain terminals. Its Trench MOSFET architecture delivers low threshold voltage (0.75–1.25 V) and stable R_DS(on) across temperature, enabling efficient low-voltage switching down to 2.5 V gate drive.

The dual topology supports synchronous or independent control of two loads without cross-coupling. Thermal resistance from junction to solder point is 12–15 K/W, and the package features tin-plated side pads for optical solder inspection - confirming suitability for automated optical inspection (AOI) in high-reliability PCB assembly.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	30 V - maximum blocking voltage per transistor; defines safe operation in 24 V automotive systems.
R_DS(on)	55 mΩ typ @ V_GS = 4.5 V, I_D = 3.1 A - enables <165 mW conduction loss per channel at full rated current.
I_D	3.1 A continuous @ T_amb = 25 °C - usable for driving medium-power LEDs or solenoids in compact modules.
V_GS(th)	0.75–1.25 V @ I_D = 250 µA - ensures reliable turn-on with low-voltage microcontrollers (e.g., 1.8 V or 3.3 V GPIO).
Q_G(tot)	2.9–5 nC - low gate charge reduces drive power and switching losses in PWM applications up to 1 MHz.
ESD Rating	>2 kV HBM - meets basic handling robustness requirements for automotive manufacturing environments.
T_j Range	−55 to +150 °C - supports under-hood deployment without derating in most automotive thermal profiles.

Pinout & Package

DFN2020D-6 (SOT1118D) is a 2 × 2 × 0.65 mm leadless plastic package with exposed drain pads on both sides for thermal enhancement and optical solder inspection. The package has six terminals arranged in a dual-row layout with pin 1 index marking.

Pin/Terminal	Circuit Role	Design Meaning
1	S1	Source terminal of transistor 1 - connects to ground or low-side return path for first load.
2	G1	Gate terminal of transistor 1 - accepts logic-level drive; threshold compatible with 1.8 V/3.3 V MCUs.
3	D2	Drain terminal of transistor 2 - connects to second load's high-side supply node.
4	S2	Source terminal of transistor 2 - independent return path; enables dual-load isolation.
5	G2	Gate terminal of transistor 2 - fully decoupled from G1; allows asynchronous or synchronized control.
6	D1	Drain terminal of transistor 1 - connects to first load's high-side supply node.

Key Features

Feature	Design Value
AEC-Q101 qualified	Validated for automotive applications including engine control, lighting, and body electronics.
Trench MOSFET technology	Delivers lower R_DS(on) and higher cell density than planar MOSFETs in same footprint.
Leadless DFN2020D-6 package	Reduces board area by ~50% vs. SO-8; eliminates lead inductance for faster switching.
Tin-plated side pads	Enables AOI-compatible solder joint verification without X-ray inspection.
Thermally enhanced pad layout	Drain pads on both sides provide 12–15 K/W R_th(j-sp), improving power handling over standard DFN.

Applications

Automotive LED Headlamp Driver

Industrial Power Sequencing Module

Use Scenario: Driving dual-channel matrix LED arrays in adaptive front-lighting systems (AFS), requiring independent PWM dimming and fault-isolated switching.

IC Role / Device Role / Timing Role: Dual low-side switch controlling cathode paths of two LED strings; enables precise current regulation via external sense resistors and MCU timing.

Use Value: 55 mΩ R_DS(on) minimizes heat generation in sealed headlamp housings; AEC-Q101 rating ensures reliability over 15-year vehicle lifetime.

Use Scenario: Sequencing power-up of multiple subsystems (e.g., sensor array, MCU, radio) in programmable logic controllers (PLCs) with controlled inrush current.

IC Role / Device Role / Timing Role: Dual loadswitch managing independent 3.3 V and 5 V rails; gates enabled sequentially via GPIO-controlled gate signals.

Use Value: Independent gate control avoids cross-talk; low V_GS(th) ensures clean turn-on with 3.3 V FPGA outputs without level-shifting.

USB-C Power Delivery Load Switch

Smart Home Lighting Control Board

Use Scenario: Enabling/disabling VBUS and auxiliary power paths in USB-C PD sink adapters where space and thermal performance are constrained.

IC Role / Device Role / Timing Role: Dual N-channel switch isolating downstream 5 V and 9 V rails; driven by PD controller's GPIOs with fast turn-on (<30 ns).

Use Value: 2.9–5 nC Q_G(tot) supports 500 kHz+ switching for dynamic load management; 2 kV HBM ESD protects against connector hot-plug transients.

Use Scenario: Controlling multiple LED strips and relay coils in compact smart wall switches with integrated Zigbee/Thread radios.

IC Role / Device Role / Timing Role: Dual low-side driver for RGBW LED string and 12 V relay coil; operated from 3.3 V SoC GPIOs with software-timed PWM.

Use Value: 0.75–1.25 V V_GS(th) guarantees turn-on margin even with battery voltage sag to 2.8 V; 2 × 2 mm footprint saves >60% board area vs. discrete SO-8 solutions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel loadswitch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	Higher R_DS(on) (65 mΩ typ), larger TSOP-6 package (3 × 3 mm), no AEC-Q101 qualification	Targeted at consumer-grade power management; lacks automotive thermal and reliability validation	Select only for cost-sensitive non-automotive designs where board space and qualification are secondary
PSMN2R0-30YL	Single-channel 30 V MOSFET (2.0 mΩ R_DS(on)), TO-220FP package; requires two devices for dual function	Used in high-current (>10 A) industrial motor drives; not suitable for space-constrained dual-switch layouts	Choose only when per-channel current exceeds 3.1 A or discrete thermal management is preferred

Compared with DMN3026LSD-13 and PSMN2R0-30YL, PMDPB56XNEA uniquely combines AEC-Q101 compliance, dual-channel integration in 2 × 2 mm, and sub-1 V threshold - making it the only option for compact, automotive-grade dual loadswitching without compromising reliability or board area.

Availability

PMDPB56XNEA is available at Aetrix Electronics and suitable for automotive LED drivers, industrial power sequencing modules, and USB-C power delivery load switching requiring stable component supply and long-term lifecycle support.

Supply support for PMDPB56XNEA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in automotive-qualified MOSFETs and ESD protection components.

This device belongs to Nexperia's TrenchMOS® dual-channel automotive power portfolio, designed specifically for space-constrained, thermally demanding low-side switching in 12 V/24 V vehicle systems and industrial control units.

FAQ

Is PMDPB56XNEA pin-compatible with other DFN2020D-6 dual MOSFETs?

No - while the DFN2020D-6 outline is standardized, pin assignment varies across manufacturers. PMDPB56XNEA uses a specific 1:S1, 2:G1, 3:D2, 4:S2, 5:G2, 6:D1 mapping confirmed in Nexperia's data sheet Figure 2. Cross-checking against alternate parts like DMN3026LSD-13 reveals different pinouts; physical substitution without verification risks circuit damage.

What is the maximum continuous drain current per channel at 100 °C ambient?

Per Table 5, the maximum continuous drain current per transistor is 2 A at T_amb = 100 °C with standard FR4 mounting. This reflects thermal derating due to reduced heat dissipation at elevated ambient temperatures - not a device limitation but a PCB-dependent capability requiring appropriate copper area and airflow.

Does PMDPB56XNEA integrate body diodes, and what is their forward voltage?

Yes - each N-channel MOSFET includes an intrinsic source-drain body diode. Per Table 7, V_SD is 0.7–1.2 V at I_S = 1.1 A and T_j = 25 °C. These diodes support freewheeling in inductive loads but are not optimized for reverse conduction; external Schottky diodes are recommended for high-frequency flyback paths.

Can PMDPB56XNEA be used in linear mode (as a pass element)?

No - the device is characterized and qualified only for switching operation. Its Safe Operating Area (SOA) curve (Figure 3) shows limited DC linear capability below 1 A at V_DS > 5 V. Linear use risks thermal runaway due to positive temperature coefficient of R_DS(on); dedicated linear regulators or DMOS-based pass transistors should be used instead.

PMDPB56XNEAX Specifications

Product attributes: Attribute value

Manufacturer:: Nexperia USA Inc.

Series:: -

Package/Case:: 6-UDFN Exposed Pad

Packaging:: Tape & Reel (TR)

Product Status:: Active

Technology:: MOSFET (Metal Oxide)

Configuration:: 2 N-Channel (Dual)

FET Feature:: -

Drain to Source Voltage (Vdss):: 30V

Current - Continuous Drain (Id) @ 25°C:: 3.1A (Ta)

Rds On (Max) @ Id, Vgs:: 72mOhm @ 3.1A, 4.5V

Vgs(th) (Max) @ Id:: 1.25V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 5nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds:: 256pF @ 15V

Power - Max:: 485mW (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: Automotive

Qualification:: AEC-Q100

Mounting Type:: Surface Mount

Supplier Device Package:: DFN2020D-6

PMDPB56XNEAX FAQ

1.How can I place an order for PMDPB56XNEAX through Aetrix?

Please submit a Request for Quotation (RFQ) for PMDPB56XNEAX on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMDPB56XNEAX reliable?

The price and inventory of PMDPB56XNEAX are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDPB56XNEAX is usually 5 days.

3.What payment methods are accepted for PMDPB56XNEAX?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDPB56XNEAX transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMDPB56XNEAX?

PMDPB56XNEAX orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMDPB56XNEAX order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMDPB56XNEAX?

For technical support, including PMDPB56XNEAX datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDPB56XNEAX requirements.

6.How does Aetrix verify that PMDPB56XNEAX is sourced from the original manufacturer or authorized distributors?

All PMDPB56XNEAX products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDPB56XNEAX meets industry standards.

7.What is the process for return or replacement of PMDPB56XNEAX?

All PMDPB56XNEAX units undergo pre-shipment inspection (PSI). If there is an issue with PMDPB56XNEAX, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMDPB56XNEAX part is unused and in its original packaging.

Return procedure for PMDPB56XNEAX:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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