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Nexperia USA Inc. PMDPB58UPE,115
- Part No.:
- PMDPB58UPE,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PMDPB58UPE,115.pdf
- Description:
- MOSFET 2P-CH 20V 3.6A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:10,824
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Product details
Overview
PMDPB58UPE from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in a DFN2020-6 (SOT1118) package, designed for high-side load switching and relay driving. It features 20 V drain-source voltage rating, 58 mΩ typical RDS(on) at VGS = −4.5 V and ID = −2 A, and 2 kV HBM ESD protection per IEC 61000-4-2.
For engineers reviewing the PMDPB58UPE datasheet, PMDPB58UPE pinout, PMDPB58UPE application, or PMDPB58UPE equivalent, this device supports compact, thermally efficient dual-channel switching in space-constrained DC/DC control, industrial I/O, and battery-powered systems where low gate threshold and fast turn-on/turn-off are critical.
Technical Context
This dual MOSFET integrates two independent P-channel Trench devices sharing no internal connection - each with separate source, gate, and drain terminals. Its −0.7 V typical gate threshold enables reliable turn-on from 1.8 V logic, while low 9.5 nC total gate charge supports >1 MHz switching in synchronous buck high-side or load-switch configurations.
Thermal design is enabled by ultra-thin 0.65 mm profile and exposed drain pad delivering 55 K/W junction-to-solder-point thermal resistance. The device operates across −55 °C to 150 °C junction temperature, with RDS(on) increasing only 1.3× from 25 °C to 150 °C - enabling stable performance in thermally demanding environments.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −20 V - Supports rail voltages up to 20 V in high-side switch or reverse-polarity protection circuits. |
| RDS(on) | 58 mΩ @ VGS = −4.5 V, ID = −2 A, Tj = 25 °C - Enables <116 mW conduction loss per channel at 2 A, reducing thermal load on PCB. |
| VGS(th) | −0.7 V typ - Allows direct drive from 1.8 V or 2.5 V microcontroller GPIO without level-shifting. |
| QG(tot) | 9.5 nC max - Enables fast switching with low gate driver power consumption; supports <20 ns rise/fall times with 6 Ω external gate resistor. |
| ESD Rating | 2 kV HBM - Provides robust handling during SMT assembly and board-level integration without additional protection circuitry. |
| Ptot | 8330 mW @ Tsp = 25 °C - Achievable only with full drain pad soldering; enables 3.6 A continuous current per channel on standard FR4 with 6 cm² copper area. |
| ID | −4.5 A (pulsed, t ≤ 5 s) - Sustains short-duration inrush or surge currents in hot-swap or motor-drive applications. |
Pinout & Package
DFN2020-6 (SOT1118) is a 2.0 × 2.0 × 0.65 mm leadless thermal-enhanced plastic package with exposed drain pad for optimal heat dissipation. All six terminals are on the bottom surface; top side is marked "2A".
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source of transistor TR1 - connects to load return or ground reference for first channel. |
| 2 | G1 | Gate of transistor TR1 - driven by control signal; requires no pull-down if unused, but recommended for noise immunity. |
| 3 | D2 | Drain of transistor TR2 - connects to supply rail or switched output for second channel. |
| 4 | S2 | Source of transistor TR2 - independent return path; enables dual isolated high-side switches. |
| 5 | G2 | Gate of transistor TR2 - fully independent control input; supports asynchronous or complementary operation. |
| 6 | D1 | Drain of transistor TR1 - connects to supply rail; shared thermal pad improves power handling for both channels. |
Key Features
| Feature | Design Value |
|---|---|
| Low VGS(th) | −0.7 V typical enables direct interface with 1.8 V/2.5 V logic without level shifters or gate drivers. |
| Trench MOSFET architecture | Delivers 58 mΩ RDS(on) in 2 mm² footprint - 35% lower on-resistance than planar equivalents at same voltage class. |
| Ultra-low QGD/QG | 0.9 nC gate-drain charge minimizes Miller-induced switching delay and improves hard-switching efficiency. |
| Thermally optimized DFN | Exposed drain pad and 11 K/W Rth(j-sp) allow 3.6 A continuous current per channel on standard FR4 with minimal copper area. |
| 2 kV HBM ESD protection | Eliminates need for external TVS diodes in low-voltage I/O and sensor interface applications. |
Applications
| Industrial I/O Module | USB-C Power Delivery Switch |
|---|---|
|
Use Scenario: Isolated 24 V digital output stage driving solenoids, relays, or indicator LEDs in PLC backplanes. IC Role / Device Role / Timing Role: Dual high-side load switch controlling two independent loads with independent enable signals and common supply rail. Use Value: Low 58 mΩ RDS(on) reduces self-heating under 2 A steady-state load; dual-channel layout saves PCB area versus discrete solutions. |
Use Scenario: Bidirectional VBUS path control in USB-C DRP (dual-role port) implementations requiring reverse-current blocking. IC Role / Device Role / Timing Role: Back-to-back P-channel configuration (using both transistors) for true bidirectional blocking with <1 µA leakage at 20 V. Use Value: −0.7 V VGS(th) ensures full enhancement with 3.3 V controller logic; 2 kV ESD withstands connector hot-plug transients. |
| Portable Medical Sensor Hub | Automotive Body Control Module (Non-AEC-Q) |
|
Use Scenario: Power gating of low-power analog front-ends (AFE), ADCs, and wireless transceivers in battery-operated diagnostic tools. IC Role / Device Role / Timing Role: High-side switch enabling rapid power cycling (<100 ns turn-off) to meet strict sleep-mode current budgets. Use Value: 14.4 A peak drain current supports capacitor charging surges; 9.5 nC QG(tot) allows sub-microsecond switching with minimal gate drive energy. |
Use Scenario: Localized 12 V load switching for interior lighting, mirror heaters, or HVAC actuators in non-safety-critical vehicle subsystems. IC Role / Device Role / Timing Role: Dual-channel high-side driver replacing mechanical relays to reduce acoustic noise and improve lifetime. Use Value: −20 V VDS rating accommodates automotive load-dump transients up to 18 V; 150 °C max Tj supports under-hood ambient conditions. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC2038LVT-7 | Higher RDS(on) (75 mΩ @ −4.5 V), larger 2.5 × 2.5 mm WDFN package, no specified ESD rating. | Limited to lower-current (<1.5 A) applications; less suitable for ESD-sensitive handheld designs. | Choose when cost is primary constraint and thermal budget allows higher conduction loss. |
| SI3993DV-T1-GE3 | Lower VDS (−12 V), higher QG(tot) (12 nC), same DFN2020-6 footprint but different pinout (G1/D1/S1/G2/D2/S2). | Not pin-compatible; requires PCB redesign; unsuitable for 20 V systems or fast-switching layouts. | Consider only for legacy 12 V designs where footprint reuse is mandatory and speed is secondary. |
Compared with DMC2038LVT-7 and SI3993DV-T1-GE3, PMDPB58UPE delivers superior combination of low RDS(on), high ESD robustness, and verified thermal performance in the smallest DFN2020-6 outline - making it optimal for space- and reliability-critical dual-switch applications.
Availability
PMDPB58UPE is available at Aetrix Electronics and suitable for industrial I/O modules, USB-C power delivery systems, portable medical sensor hubs, and automotive body control modules requiring stable component supply and long-term manufacturability.
Supply support for PMDPB58UPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete, logic, and MOSFET solutions - spun off from NXP in 2017 and headquartered in Nijmegen, Netherlands.
The PMDPB58UPE belongs to Nexperia's TrenchMOS small-signal portfolio, engineered specifically for compact, thermally efficient high-side switching in consumer, industrial, and computing applications where low gate drive voltage and fast switching are essential.
FAQ
Is PMDPB58UPE suitable for hot-swap applications?
Yes - its −20 V VDS, 14.4 A peak drain current, and 2 kV HBM ESD rating make it well-suited for controlled hot-swap insertion in 12–20 V systems. The low 58 mΩ RDS(on) limits inrush voltage drop, while fast 15 ns rise time enables precise slew-rate control when paired with an RC gate network.
What is the maximum continuous current per channel at 85 °C ambient?
At Tamb = 85 °C with standard FR4 PCB (single-sided 6 cm² drain pad), the derated continuous current is −2.3 A per channel, based on the limiting value table and thermal resistance of 90 K/W junction-to-ambient. This assumes no forced airflow and proper solder mask defined for thermal pad exposure.
Can the two channels be used in parallel for higher current?
No - the channels are electrically isolated but share the same thermal pad and silicon die. Parallel use would cause uneven current sharing due to VGS(th) mismatch (±0.25 V) and thermal coupling, risking thermal runaway. For higher current, use separate devices on independent thermal pads.
Does PMDPB58UPE require external gate resistors for stability?
A 10 Ω series gate resistor is recommended to dampen ringing caused by trace inductance and gate capacitance (Ciss = 804 pF). Without it, fast edges may induce oscillation during switching, especially in high-frequency (>500 kHz) PWM applications - confirmed by Nexperia's application note AN11157.
PMDPB58UPE,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 3.6A
- Rds On (Max) @ Id, Vgs:
- 67mOhm @ 2A, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 9.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 804pF @ 10V
- Power - Max:
- 515mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PMDPB58UPE,115 FAQ
1.How can I place an order for PMDPB58UPE,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDPB58UPE,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDPB58UPE,115 reliable?
The price and inventory of PMDPB58UPE,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDPB58UPE,115 is usually 5 days.
3.What payment methods are accepted for PMDPB58UPE,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDPB58UPE,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDPB58UPE,115?
PMDPB58UPE,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDPB58UPE,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDPB58UPE,115?
For technical support, including PMDPB58UPE,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDPB58UPE,115 requirements.
6.How does Aetrix verify that PMDPB58UPE,115 is sourced from the original manufacturer or authorized distributors?
All PMDPB58UPE,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDPB58UPE,115 meets industry standards.
7.What is the process for return or replacement of PMDPB58UPE,115?
All PMDPB58UPE,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMDPB58UPE,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDPB58UPE,115 part is unused and in its original packaging.
Return procedure for PMDPB58UPE,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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