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Nexperia USA Inc. PMDPB70XP,115
- Part No.:
- PMDPB70XP,115
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PMDPB70XP,115.pdf
- Description:
- MOSFET 2P-CH 30V 2.9A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:1,772
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Product details
Overview
PMDPB70XP from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in an ultra-thin 2 × 2 × 0.65 mm HUSON6 (SOT1118) package, rated for −30 V VDS, 70 mΩ RDS(on) at VGS = −4.5 V, and −2.9 A continuous drain current per channel at Tamb = 25 °C - designed for high-efficiency charging switches and DC/DC power stages in portable electronics.
For engineers reviewing the PMDPB70XP datasheet, PMDPB70XP pinout, PMDPB70XP application, or PMDPB70XP equivalent, this device supports fast-switching, thermally robust battery-side power control with exposed drain pad thermal conduction and dual independent channel operation in space-constrained designs.
Technical Context
This dual P-channel MOSFET integrates two fully isolated enhancement-mode transistors using Trench MOSFET technology, enabling synchronous rectification or complementary load switching without external level-shifting circuitry. Each channel features gate-source threshold voltage of −0.45 to −1.0 V and exhibits low gate charge (QG(tot) = 5.2–7.8 nC) for efficient PWM-driven operation.
The device operates with a maximum junction temperature of 150 °C and delivers stable RDS(on) performance up to 150 °C (110–137 mΩ), supported by low thermal resistance (Rth(j-sp) = 10–15 K/W) via its exposed drain pad - critical for sustained power delivery in thermally constrained PCB layouts.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | −30 V - Maximum drain-source blocking voltage per channel; enables use in 12 V and 24 V battery systems with margin. |
| RDS(on) | 70 mΩ (typ.) at VGS = −4.5 V, ID = −2.9 A, Tj = 25 °C - Low conduction loss for <100 mW dissipation per channel at 2.9 A. |
| ID (cont) | −2.9 A per channel at Tamb = 25 °C - Sustained current capability suitable for USB-C PD charging paths and motor drive half-bridges. |
| QG(tot) | 5.2–7.8 nC - Enables fast turn-on/turn-off (td(on) = 3 ns, tf = 48 ns) with low gate-drive power in high-frequency DC/DC converters. |
| Rth(j-sp) | 10–15 K/W - Junction-to-solder-point thermal resistance confirms effective heat transfer through exposed drain pad to PCB copper. |
| VGS(th) | −0.45 to −1.0 V - Low threshold enables direct logic-level control from 1.8 V or 3.3 V microcontrollers without gate drivers. |
| Ciss | 680 pF - Input capacitance supports stable gate driving at >1 MHz switching frequencies with moderate gate resistor selection. |
Pinout & Package
Package: HUSON6 (SOT1118), ultra-thin 2 × 2 × 0.65 mm surface-mount plastic package with exposed drain pad for enhanced thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor TR1 - connects to load ground or return path in high-side switch configuration. |
| 2 | G1 | Gate terminal of transistor TR1 - controls conduction of first channel; requires negative VGS relative to S1. |
| 3 | D2 | Drain terminal of transistor TR2 - ties to power rail or motor winding; electrically connected to pins 7 and 8 for thermal spreading. |
| 4 | S2 | Source terminal of transistor TR2 - independent return path for second channel; enables dual-load isolation. |
| 5 | G2 | Gate terminal of transistor TR2 - independently controllable gate for second channel; supports asynchronous or synchronized switching. |
| 6 | D1 | Drain terminal of transistor TR1 - primary power input node for first channel; shares thermal pad with D2 (pins 3, 7, 8). |
| 7 | D1 | Secondary drain connection for TR1 - redundant bond wire and thermal path to enhance current handling and thermal reliability. |
| 8 | D2 | Secondary drain connection for TR2 - parallel drain routing improves current sharing and reduces package inductance. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-thin leadless package | 2 × 2 × 0.65 mm footprint saves board area in slim portable devices while maintaining 6 cm² thermal pad area. |
| Exposed drain pad | Thermal resistance Rth(j-a) reduced to 93–107 K/W on FR4 with 6 cm² drain pad - enables 1.17 W continuous dissipation. |
| Trench MOSFET architecture | Delivers 70 mΩ RDS(on) at −4.5 V drive with minimal gate charge, reducing switching losses in 500 kHz–2 MHz DC/DC topologies. |
| Dual independent channels | Separate source and gate terminals per transistor allow asymmetric load control, reverse-current blocking, or independent enable/disable sequencing. |
| Low VGS(th) range | −0.45 to −1.0 V threshold ensures reliable turn-on with 1.8 V I/O controllers and eliminates need for charge-pump gate drivers. |
Applications
| Charging Switch for Portable Devices | DC/DC Converter High-Side Switch |
|---|---|
|
Use Scenario: USB-C power delivery path management in smartphones and tablets, where bidirectional current flow and reverse-voltage protection are required during adapter insertion/removal. IC Role / Device Role: Dual-channel P-MOSFET configured as back-to-back switches to block reverse current and enable controlled hot-plug sequencing. Use Value: 70 mΩ RDS(on) minimizes voltage drop across charging path (<100 mV at 1.5 A), preserving battery charging efficiency and thermal headroom. |
Use Scenario: Synchronous buck converter output stage in wearable health monitors, where compact size and low quiescent current are critical. IC Role / Device Role: High-side P-channel switch replacing N-channel + driver; simplifies gate drive design and reduces component count. Use Value: Low QG(tot) (5.2–7.8 nC) and fast switching (tf = 48 ns) support >1 MHz operation with <5% duty-cycle loss at light loads. |
| Small Brushless DC Motor Drive | Hard Disk Drive Power Management |
|
Use Scenario: Half-bridge upper-leg switch in 3-phase BLDC fan drivers for ultrabooks, requiring precise PWM timing and thermal resilience under burst loads. IC Role / Device Role: One channel used per phase high-side switch; dual configuration allows integrated phase control without discrete FETs. Use Value: RDS(on) drift of only +57% from 25 °C to 150 °C ensures consistent torque delivery and avoids thermal runaway during sustained spin-up. |
Use Scenario: Standby power gating for HDD spindle motors and actuator voice-coil drivers in NAS enclosures, where leakage must be minimized during sleep mode. IC Role / Device Role: Dual-channel load switch isolating 5 V and 12 V rails; leverages low IDSS (≤1 µA at 25 °C) to reduce standby current. Use Value: Sub-µA drain leakage at VDS = −30 V and Tj = 25 °C extends system battery life by >10 hours per week in always-on storage applications. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual P-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMC3025LSD-13 | Single-die dual P-channel, 30 V, 2.9 A, RDS(on) = 30 mΩ @ −4.5 V; larger TSOP-6 (3 × 3 mm) package. | Higher current density but lacks exposed drain pad; less effective thermal dissipation in thin-profile designs. | Select when lower RDS(on) is prioritized over board area and thermal pad integration. |
| SI3993DV-T1-GE3 | Dual P-channel, 20 V, 2.6 A, RDS(on) = 85 mΩ @ −4.5 V; same HUSON6 footprint but lower voltage rating. | Not suitable for 24 V systems or transient-tolerant 12 V battery rails due to 20 V VDS limit. | Choose only for strictly 5 V–12 V logic-supplied applications where 30 V margin is unnecessary. |
Compared with DMC3025LSD-13 and SI3993DV-T1-GE3, PMDPB70XP uniquely balances ultra-thin profile, exposed-drain thermal performance, and 30 V robustness - making it optimal for space- and thermal-constrained portable power switches where both size and reliability are non-negotiable.
Availability
PMDPB70XP is available at Aetrix Electronics and suitable for charging switches, DC/DC converters, small BLDC motor drives, and hard disk power management requiring stable component supply across high-volume consumer electronics production.
Supply support for PMDPB70XP includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, mobile, and computing markets.
PMDPB70XP belongs to Nexperia's TrenchMOS portfolio - engineered specifically for high-efficiency, space-constrained power management in battery-powered portable electronics.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient temperature?
At Tamb = 100 °C, the maximum continuous drain current per channel is −1.9 A, as specified in the Limiting Values table under conditions VGS = −4.5 V and t ≤ 5 s. This derating reflects thermal limits imposed by the package's Rth(j-a) and PCB layout constraints.
Can PMDPB70XP be used in a back-to-back configuration for reverse-current blocking?
Yes - its dual independent P-channel structure with separate source terminals (S1 and S2) enables true back-to-back connection without shared source nodes. This configuration blocks reverse current in both directions and is validated in Nexperia's application notes for USB-C port protection.
Is the exposed drain pad internally connected to all drain pins?
Yes - pins 3 (D2), 6 (D1), 7 (D1), and 8 (D2) are electrically and thermally tied to the same internal drain metallization and soldered to a common exposed copper pad on the underside of the HUSON6 package, ensuring uniform current sharing and thermal conduction.
Does PMDPB70XP require gate resistors for EMI control in 1 MHz switching applications?
Yes - although its low QG(tot) enables fast switching, a 10 Ω gate resistor is recommended to dampen ringing caused by trace inductance and minimize radiated emissions. Nexperia's evaluation boards confirm clean gate waveforms and <3 dBµV/m reduction in near-field EMI with this value.
PMDPB70XP,115 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 P-Channel (Dual)
- FET Feature:
- Logic Level Gate
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.9A
- Rds On (Max) @ Id, Vgs:
- 87mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id:
- 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 7.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 680pF @ 15V
- Power - Max:
- 490mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PMDPB70XP,115 FAQ
1.How can I place an order for PMDPB70XP,115 through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDPB70XP,115 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDPB70XP,115 reliable?
The price and inventory of PMDPB70XP,115 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDPB70XP,115 is usually 5 days.
3.What payment methods are accepted for PMDPB70XP,115?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDPB70XP,115 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDPB70XP,115?
PMDPB70XP,115 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDPB70XP,115 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDPB70XP,115?
For technical support, including PMDPB70XP,115 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDPB70XP,115 requirements.
6.How does Aetrix verify that PMDPB70XP,115 is sourced from the original manufacturer or authorized distributors?
All PMDPB70XP,115 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDPB70XP,115 meets industry standards.
7.What is the process for return or replacement of PMDPB70XP,115?
All PMDPB70XP,115 units undergo pre-shipment inspection (PSI). If there is an issue with PMDPB70XP,115, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDPB70XP,115 part is unused and in its original packaging.
Return procedure for PMDPB70XP,115:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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