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Nexperia USA Inc. PMDPB95XNE2X
- Part No.:
- PMDPB95XNE2X
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-UFDFN Exposed Pad
- Datasheet:
-
PMDPB95XNE2X.pdf
- Description:
- MOSFET 2N-CH 30V 2.7A 6HUSON
- Quantity:
- Payment:
- Shipping:
Inventory:1,057
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Product details
Overview
PMDPB95XNE2 from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in a DFN2020-6 (SOT1118) package, rated for 30 V drain-source voltage, 3 A continuous drain current per transistor at 25 °C, and 77 mΩ typical RDS(on) at VGS = 4.5 V and ID = 2.8 A - used as a compact, thermally efficient charging switch in portable battery management systems.
For engineers reviewing the PMDPB95XNE2 datasheet, PMDPB95XNE2 pinout, PMDPB95XNE2 application, or PMDPB95XNE2 equivalent, this device supports high-speed switching in space-constrained DC-DC converters and dual-motor drive paths where low on-resistance, ESD-hardened gate integrity (>2 kV HBM), and exposed-drain thermal performance are critical selection criteria.
Technical Context
This dual MOSFET integrates two independent N-channel Trench devices sharing no internal connection - each with separate gate, source, and drain terminals. Its DFN2020-6 package features an exposed drain pad for direct PCB thermal conduction and supports simultaneous bidirectional control of two power paths.
The device operates with a gate threshold voltage of 0.75–1.25 V (typ. 1.0 V) and delivers fast switching via low total gate charge (2.9–4.5 nC) and minimal reverse transfer capacitance (23 pF), enabling efficient operation in 1–2 MHz DC-DC topologies without external gate drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V - maximum blocking voltage per transistor; defines safe operating range in 12 V/24 V portable power rails. |
| RDS(on) | 77 mΩ (typ.) at VGS = 4.5 V, ID = 2.8 A, Tj = 25 °C - enables <100 mW conduction loss per channel at 2.8 A, reducing thermal load in thin-profile PCBs. |
| ID (cont.) | 3 A per transistor at Tamb = 25 °C, t ≤ 5 s - supports pulsed load handling in USB-C PD charging switches and motor start-up surges. |
| QG(tot) | 2.9–4.5 nC - low gate charge allows full turn-on with <1 mA peak gate drive current, compatible with low-power microcontroller GPIOs. |
| Rth(j-sp) | 12–15 K/W - junction-to-solder-point thermal resistance enables >1 W power dissipation when mounted on 6 cm² copper drain pad. |
| ESD Rating | >2 kV HBM - protects against electrostatic discharge during automated assembly and end-user handling in consumer electronics. |
Pinout & Package
DFN2020-6 (SOT1118) is a 2 mm × 2 mm × 0.65 mm leadless, thermally enhanced ultra-thin plastic package with an exposed drain pad on the bottom side for direct thermal coupling to PCB copper.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor 1 - connects to low-side return path; electrically isolated from S2. |
| 2 | G1 | Gate terminal of transistor 1 - controls conduction of TR1 independently; requires no level-shifting for 3.3 V logic drive. |
| 3 | D2 | Drain terminal of transistor 2 - tied to exposed pad; primary thermal and current path for TR2. |
| 4 | S2 | Source terminal of transistor 2 - independent return node; enables dual-channel half-bridge or load-switch configuration. |
| 5 | G2 | Gate terminal of transistor 2 - fully decoupled from G1; supports asynchronous dual-control timing. |
| 6 | D1 | Drain terminal of transistor 1 - tied to exposed pad; shares thermal pad with D2 but remains electrically isolated. |
Key Features
| Feature | Design Value |
|---|---|
| Exposed drain pad | Thermal resistance to solder point reduced to 12–15 K/W - enables >1 W continuous dissipation on standard FR4 with 6 cm² copper. |
| Trench MOSFET architecture | 77 mΩ RDS(on) at 4.5 V drive - achieves low conduction loss without requiring 10 V gate bias, simplifying power supply design. |
| Fast switching | Turn-on delay <9 ns, rise time <10 ns - supports >1 MHz PWM in buck converters with minimal dead-time overhead. |
| ESD protection | >2 kV HBM rating - eliminates need for external ESD diodes in handheld device front-end power stages. |
Applications
| USB-C Charging Switch | DC-DC Buck Converter High-Side/Low-Side Pair |
|---|---|
|
Use Scenario: Dual-path power routing in USB-C PD 3.0 compliant portable chargers managing input from AC adapter or power bank. IC Role / Device Role / Timing Role: Each transistor acts as an independent load switch controlling VBUS path selection and reverse-current blocking. Use Value: 77 mΩ RDS(on) limits voltage drop to <210 mV at 2.7 A, preserving >94% power delivery efficiency across 5–20 V input range. |
Use Scenario: Integrated high-side and low-side switching in 12 V → 3.3 V synchronous buck converter for SoC power domains. IC Role / Device Role / Timing Role: TR1 functions as high-side switch; TR2 as low-side synchronous rectifier - both driven by single controller with complementary timing. Use Value: Matched RDS(on) and QG ensure balanced conduction losses and minimized shoot-through risk at 1.5 MHz switching frequency. |
| Small Brushless DC Motor Driver | Battery-Powered Hard Disk Drive Power Gate |
|
Use Scenario: Half-bridge driver for 5 V–12 V BLDC fans and miniature pumps in medical wearables and IoT edge sensors. IC Role / Device Role / Timing Role: TR1 and TR2 form one leg of a three-phase inverter - controlled via PWM with dead-time insertion to prevent cross-conduction. Use Value: 11 A peak drain current capability handles motor stall currents; 23 pF Crss minimizes Miller-induced false turn-on during high dV/dt commutation. |
Use Scenario: Main power enable gate for 2.5-inch HDDs in ruggedized tablets and portable data loggers with hot-swap battery support. IC Role / Device Role / Timing Role: TR1 controls +5 V spindle/VCM rail; TR2 controls +12 V actuator rail - independently sequenced for staggered spin-up. Use Value: Independent gate control allows precise sequencing; 30 V VDS rating accommodates 12 V rail transients up to ±10 % without clamping. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3026LSD-13 | Higher RDS(on) (90 mΩ typ.), larger SO-8 package (4.9 × 6.0 mm), no exposed drain pad | Lower thermal performance; suitable only where board space and heat dissipation are less constrained | Select when legacy SO-8 footprint compatibility is required and thermal budget allows ≥2× higher conduction loss. |
| SI2302DS-T1-GE3 | Single-channel, SOT-23 package, 30 V/2.6 A, RDS(on) = 80 mΩ - requires two devices for dual function | Doubles component count and PCB area; lacks integrated dual-channel timing synchronization | Choose only if design mandates discrete channel isolation or existing SOT-23 layout reuse outweighs size/thermal penalties. |
Compared with DMN3026LSD-13 and SI2302DS-T1-GE3, PMDPB95XNE2 delivers superior power density and thermal efficiency in a 2 × 2 mm footprint, enabling smaller battery-powered systems where simultaneous dual-channel control and sub-100 mΩ on-resistance are non-negotiable.
Availability
PMDPB95XNE2 is available at Aetrix Electronics and suitable for USB-C charging switches, synchronous DC-DC converters, and small BLDC motor drives requiring stable component supply across high-volume portable electronics production.
Supply support for PMDPB95XNE2 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.
PMDPB95XNE2 belongs to Nexperia's TrenchMOS dual-FET product line, engineered specifically for space- and thermally constrained battery-powered applications demanding fast, efficient, and robust power switching in portable electronics.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient temperature?
At Tamb = 100 °C, the maximum continuous drain current per transistor is 1.7 A, as specified in Table 5 (Limiting Values). This derating accounts for thermal resistance and junction temperature limits, assuming standard FR4 mounting with single-sided 6 cm² copper drain pad.
Can PMDPB95XNE2 be used with 3.3 V logic-level gate drive?
Yes - its gate threshold voltage ranges from 0.75 V to 1.25 V (typ. 1.0 V), and RDS(on) is fully characterized at VGS = 4.5 V and 2.5 V. At 3.3 V, RDS(on) increases to ~117 mΩ (typ.), still supporting ≤2 A continuous current with acceptable conduction loss in most portable applications.
Is the exposed drain pad electrically connected to both transistors?
Yes - pins 3 (D2) and 6 (D1) are both internally connected to the same exposed drain pad on the underside of the DFN2020-6 package. However, the two transistors remain electrically isolated; the shared pad serves only thermal and mechanical anchoring purposes.
Does PMDPB95XNE2 include integrated body diode reverse recovery protection?
No - it uses standard silicon body diodes inherent to N-channel MOSFETs. Reverse recovery characteristics are not specified; the device is intended for synchronous rectification or unidirectional switching where body diode conduction is minimized or actively managed by external timing control.
PMDPB95XNE2X Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-UFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 2.7A (Ta)
- Rds On (Max) @ Id, Vgs:
- 99mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id:
- 1.25V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 4.5nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 258pF @ 15V
- Power - Max:
- 510mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 6-HUSON (2x2)
PMDPB95XNE2X FAQ
1.How can I place an order for PMDPB95XNE2X through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDPB95XNE2X on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDPB95XNE2X reliable?
The price and inventory of PMDPB95XNE2X are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDPB95XNE2X is usually 5 days.
3.What payment methods are accepted for PMDPB95XNE2X?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDPB95XNE2X transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDPB95XNE2X?
PMDPB95XNE2X orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDPB95XNE2X order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDPB95XNE2X?
For technical support, including PMDPB95XNE2X datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDPB95XNE2X requirements.
6.How does Aetrix verify that PMDPB95XNE2X is sourced from the original manufacturer or authorized distributors?
All PMDPB95XNE2X products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDPB95XNE2X meets industry standards.
7.What is the process for return or replacement of PMDPB95XNE2X?
All PMDPB95XNE2X units undergo pre-shipment inspection (PSI). If there is an issue with PMDPB95XNE2X, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDPB95XNE2X part is unused and in its original packaging.
Return procedure for PMDPB95XNE2X:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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