Nexperia USA Inc. PMDT290UCE,115

Overview

PMDT290UCE from Nexperia is a complementary N/P-channel Trench MOSFET pair in a single SOT666 package, designed for bidirectional switching and load control. It delivers 20 V drain-source voltage rating, 800 mA N-channel and −550 mA P-channel continuous drain current at 25 °C, with R_DS(on) of 290 mΩ (N) and 0.67 Ω (P) at ±4.5 V gate drive - enabling compact relay replacement and high-speed line driving in space-constrained portable electronics.

For engineers reviewing the PMDT290UCE datasheet, PMDT290UCE pinout, PMDT290UCE application, or PMDT290UCE equivalent, this device supports dual-channel low-side/high-side switching with verified thermal performance on FR4 PCBs, ESD robustness up to 2 kV HBM, and gate charge values optimized for <100 ns switching transitions in battery-powered interface circuits.

Technical Context

This dual MOSFET integrates independent N-channel (TR1) and P-channel (TR2) devices sharing a common SOT666 footprint. Each channel features trench-gate architecture for low R_DS(on) and fast dynamic response, with gate threshold voltages of 0.75 V (N) and −0.8 V (P), enabling logic-level drive compatibility down to 1.8 V.

Thermal design is supported by junction-to-solder-point resistance of 115 K/W and normalized power derating curves showing 50% P_tot retention at 125 °C ambient. Safe operating area (SOA) plots confirm pulse-current capability up to 3.2 A (N) and −2.2 A (P) for 10 µs pulses at V_DS = 10 V.

Key Specifications

Pinout & Package

SOT666 is an ultra-small flat-lead surface-mount package measuring 1.6 mm × 1.2 mm × 0.55 mm with 0.5 mm pitch and six terminals. Its low-profile construction supports high-density routing on thin PCBs and automated reflow assembly per JEDEC J-STD-020.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar complementary MOSFET switching applications.

Compared with DMC2038LVT and NTJD4152P, PMDT290UCE offers superior current density per mm², verified 1.8 V logic compatibility, and tighter R_DS(on) matching - making it optimal for miniaturized, battery-sensitive applications requiring simultaneous N/P conduction.

Availability

PMDT290UCE is available at Aetrix Electronics and suitable for relay driver modules, high-speed line drivers, low-side loadswitches, and bidirectional switching circuits requiring stable component supply across consumer, industrial, and medical electronics programs.

Supply support for PMDT290UCE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential semiconductors, delivering high-performance, reliable components for automotive, industrial, and consumer markets.

PMDT290UCE belongs to Nexperia's TrenchMOS complementary FET product line, engineered specifically for space-constrained, low-voltage switching applications where fast transition times, low gate charge, and logic-level drive are critical.

FAQ

What is the maximum continuous drain current for each channel at 100 °C ambient?

At T_amb = 100 °C on FR4 PCB with standard footprint, the N-channel supports 500 mA and the P-channel supports −350 mA continuous drain current. These values reflect thermal derating per Figure 2 in the datasheet and assume no additional copper pour beyond the 1 cm² drain pad specified in the test conditions.

Can PMDT290UCE be used as a high-side switch with 3.3 V GPIO control?

Yes - the P-channel channel has V_GS(th) = −0.8 V (typical), allowing full enhancement with 3.3 V applied between gate and source. However, direct GPIO connection requires the source to be tied to V_CC, so gate must be actively pulled to ground (0 V) to turn on; a level-shifting circuit is needed if GPIO cannot sink sufficient current.

Does the device include internal body diodes, and what are their forward voltage characteristics?

Both channels integrate intrinsic source-drain diodes. At I_S = 300 mA and T_j = 25 °C, V_SD is 0.77 V (N) and −0.84 V (P). These diodes support freewheeling in inductive loads and reverse-current blocking in back-to-back configurations, with reverse recovery time not characterized but typical of trench MOSFETs (<50 ns).

Is PMDT290UCE qualified for automotive applications?

No - the datasheet explicitly states "Product changed to non-automotive qualification" in the revision history. It lacks AEC-Q101 stress testing, automotive-grade process controls, and extended temperature validation beyond −55 °C to +150 °C junction range. Use in automotive systems requires formal qualification by the end customer or selection of an AEC-Q101-compliant alternative.