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Nexperia USA Inc. PMDT290UCEH
- Part No.:
- PMDT290UCEH
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PMDT290UCEH.pdf
- Description:
- MOSFET N/P-CH 20V 0.8A SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:6,570
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Product details
Overview
PMDT290UCEH from Nexperia is a complementary N/P-channel Trench MOSFET pair in a single SOT666 package, rated for ±20 V drain-source voltage and delivering 800 mA (N-ch) / −550 mA (P-ch) continuous drain current at 4.5 V gate drive. It integrates two enhancement-mode FETs with RDS(on) of 290 mΩ (N) and 0.67 Ω (P) at Tj = 25 °C, enabling compact dual-switching in low-voltage load management circuits.
For engineers reviewing the PMDT290UCEH datasheet, PMDT290UCEH pinout, PMDT290UCEH application, or PMDT290UCEH equivalent, this device supports high-speed switching, relay driving, and low-side loadswitching where space-constrained dual-channel control with ESD protection up to 2 kV (HBM) is required.
Technical Context
This dual MOSFET implements trench-gate technology for low RDS(on) and fast switching-td(on) ≤ 12 ns (N), td(off) ≤ 172 ns (N); td(on) ≤ 36 ns (P), td(off) ≤ 160 ns (P). Each channel operates independently with separate gate, source, and drain terminals, supporting bidirectional control in half-bridge or complementary switch configurations.
The device features integrated source-drain diodes (VSD = 0.77 V typ. for N-ch, −0.84 V typ. for P-ch at 300 mA), and thermal resistance Rth(j-a) of 250 K/W (per device, FR4 PCB, standard footprint), enabling stable operation up to 150 °C junction temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | ±20 V - Supports rail-to-rail switching across 3.3 V and 5 V logic systems without breakdown risk. |
| RDS(on) (N) | 290 mΩ max @ VGS = 4.5 V, ID = 500 mA - Enables <150 mW conduction loss at 500 mA, critical for thermally constrained PCBs. |
| RDS(on) (P) | 0.67 Ω max @ VGS = −4.5 V, ID = −400 mA - Allows efficient high-side or complementary low-side switching in sub-1 A loads. |
| QG(tot) | 0.68 nC (N), 1.14 nC (P) - Low gate charge enables direct GPIO driving from microcontrollers without external buffers. |
| ESD Rating | 2000 V HBM - Protects against handling-induced discharge during assembly and field operation. |
| Tj Range | −55 °C to +150 °C - Qualified for industrial ambient environments and sustained power cycling. |
| Package | SOT666 - 1.6 mm × 1.2 mm × 0.55 mm ultra-small flat lead package with 0.5 mm pitch, optimized for high-density routing. |
Pinout & Package
SOT666 is a 6-pin, ultra-compact surface-mount plastic package with exposed drain pads (pins 1 and 6 for N-ch and P-ch drains respectively), designed for minimal board area and enhanced thermal dissipation on FR4 PCBs with 1 cm² copper pad.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 (N-channel source) | Reference node for N-FET; connects to ground or low-side return path in loadswitch applications. |
| 2 | G1 (N-channel gate) | Control input for N-FET; requires ≥0.75 V threshold to turn on; compatible with 1.8 V–5 V logic. |
| 3 | D2 (P-channel drain) | Power output node for P-FET; ties to load when P-FET is active; shares common drain routing with N-FET in half-bridge layouts. |
| 4 | S2 (P-channel source) | Reference node for P-FET; typically connected to VCC rail in high-side switch configurations. |
| 5 | G2 (P-channel gate) | Control input for P-FET; requires ≤−0.8 V threshold; driven low to activate, high to disable. |
| 6 | D1 (N-channel drain) | Power output node for N-FET; used for low-side switching; thermally coupled to PCB via exposed pad. |
Key Features
| Feature | Design Value |
|---|---|
| Complementary N+P integration | Single SOT666 package replaces discrete dual-MOSFET solutions, reducing layout area by >40% vs. two SOT23 devices. |
| Trench MOSFET architecture | Delivers 2× lower RDS(on) per mm² than planar equivalents, improving efficiency in battery-powered portable designs. |
| Fast switching performance | Sub-20 ns turn-on delay and <35 ns fall time (N-ch) enable PWM operation up to 2 MHz without significant switching loss. |
| ESD-hardened structure | 2 kV HBM rating eliminates need for external TVS protection in most consumer and industrial I/O interfaces. |
| Thermally optimized package | Exposed drain terminals (pins 3 & 6) provide direct thermal path to PCB copper, lowering Rth(j-a) to 250 K/W (per device). |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Replacing electromechanical relays in PLC I/O modules and sensor interface cards requiring silent, bounce-free switching. IC Role / Device Role / Timing Role: N-channel switches load ground path; P-channel controls VCC-side enable; complementary action ensures zero-current dead time. Use Value: Eliminates relay wear-out and coil drive complexity while maintaining <10 µs response time and 10⁶-cycle reliability. |
Use Scenario: Driving 50 Ω transmission lines in USB 2.0, CAN FD stubs, or industrial fieldbus nodes with controlled edge rates. IC Role / Device Role / Timing Role: N-channel pulls line low; P-channel pulls high; push-pull configuration achieves <15 ns rise/fall times into capacitive loads. Use Value: Reduces signal distortion and EMI compared to open-drain drivers, enabling clean 10 Mbps digital signaling. |
| Low-Side Loadswitch | Switching Power Supply Sync Rectifier |
Use Scenario: Enabling/disabling power to peripherals (e.g., sensors, displays) in wearables and IoT edge nodes with strict quiescent current limits. IC Role / Device Role / Timing Role: N-channel acts as main loadswitch; P-channel provides reverse-current blocking and gate control sequencing. Use Value: Achieves <1 µA shutdown current and <50 mΩ effective on-resistance, extending battery life by >12% in duty-cycled systems. |
Use Scenario: Replacing Schottky diodes in 3.3 V/5 V buck converter outputs to improve efficiency in portable power supplies. IC Role / Device Role / Timing Role: N-channel serves as synchronous rectifier; P-channel manages gate timing and body-diode conduction control. Use Value: Cuts conduction loss by 65% vs. 0.3 V Schottky, raising converter efficiency from 88% to 93% at 500 mA load. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar complementary MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | Higher RDS(on): 320 mΩ (N), 1.2 Ω (P); larger SOT-363 package (2.1 mm × 2.0 mm) | Lower switching speed (td(off) > 200 ns); less suitable for >1 MHz PWM | Prefer when cost sensitivity outweighs size/efficiency requirements and layout space permits. |
| NTJD4152PZ | Lower voltage rating: ±12 V; higher RDS(on): 0.8 Ω (N), 1.4 Ω (P); same SOT-666 footprint | Not rated for 20 V bus rails; unsuitable for 5 V logic-driven 12 V loads | Select only for 3.3 V systems with <100 mA load current and no 20 V transients. |
Compared with DMN2020LSD-13 and NTJD4152PZ, PMDT290UCEH delivers superior RDS(on), faster switching, and full ±20 V capability in the smallest footprint-making it optimal for space- and efficiency-critical 3.3 V/5 V industrial and portable designs.
Availability
PMDT290UCEH is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line drivers, low-side loadswitches, and synchronous rectifier stages requiring stable component supply and guaranteed long-term sourcing.
Supply support for PMDT290UCEH includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-grade qualification.
PMDT290UCEH belongs to Nexperia's TrenchMOS complementary FET product line, engineered specifically for miniaturized dual-switching applications in portable, industrial, and communication equipment where board space and thermal performance are critical constraints.
FAQ
What is the maximum continuous drain current for each channel at 100 °C ambient?
At Tamb = 100 °C, the N-channel supports 500 mA and the P-channel supports −350 mA under standard FR4 PCB mounting conditions (single-sided copper, 1 cm² drain pad). Derating follows Fig. 2 in the datasheet, where normalized ID drops to ~62% at 100 °C ambient.
Can PMDT290UCEH be used in a high-side switch configuration?
Yes-the P-channel section is explicitly designed for high-side switching: its −20 V VDS rating and −0.8 V typical VGS(th) allow direct connection to VCC rails up to 20 V, with gate driven relative to source using level-shifting or charge-pump circuitry.
Does the SOT666 package include thermal pad exposure for solder reflow?
Yes-pins 3 (D2) and 6 (D1) are drain terminals with exposed metal areas that must be soldered to dedicated PCB copper pads (minimum 1 cm² per drain) to achieve the specified Rth(j-a) of 250 K/W and prevent thermal runaway at full rated current.
Is PMDT290UCEH qualified for automotive applications?
No-this part is explicitly marked as non-automotive qualified in the revision history (v.2, Dec 2022). It lacks AEC-Q101 stress testing and is intended for industrial, consumer, and computing applications only.
PMDT290UCEH Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- N and P-Channel Complementary
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA (Ta), 550mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 500mA, 4.5V, 850mOhm @ 400mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA, 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.68nC @ 4.5V, 1.14nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 83pF @ 10V, 87pF @ 10V
- Power - Max:
- 330mW (Ta), 1.09W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PMDT290UCEH FAQ
1.How can I place an order for PMDT290UCEH through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDT290UCEH on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDT290UCEH reliable?
The price and inventory of PMDT290UCEH are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDT290UCEH is usually 5 days.
3.What payment methods are accepted for PMDT290UCEH?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDT290UCEH transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDT290UCEH?
PMDT290UCEH orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDT290UCEH order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDT290UCEH?
For technical support, including PMDT290UCEH datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDT290UCEH requirements.
6.How does Aetrix verify that PMDT290UCEH is sourced from the original manufacturer or authorized distributors?
All PMDT290UCEH products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDT290UCEH meets industry standards.
7.What is the process for return or replacement of PMDT290UCEH?
All PMDT290UCEH units undergo pre-shipment inspection (PSI). If there is an issue with PMDT290UCEH, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDT290UCEH part is unused and in its original packaging.
Return procedure for PMDT290UCEH:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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