Nexperia USA Inc. PMDT290UNE,115

Overview

PMDT290UNE from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT666 package, designed for low-side switching in space-constrained applications. It delivers 800 mA per channel at V_GS = 4.5 V, with R_DS(on) = 290 mΩ (typ), V_DS = 20 V max, and ESD rating of 2 kV HBM - enabling compact relay drivers and high-speed line drivers.

For engineers reviewing the PMDT290UNE datasheet, PMDT290UNE pinout, PMDT290UNE application, or PMDT290UNE equivalent, key selection criteria include per-transistor R_DS(on) at 4.5 V, thermal resistance to solder point (115 K/W), dual-channel isolation, SOT666 footprint compatibility, and gate charge (0.45–0.68 nC) for fast switching control.

Technical Context

This dual MOSFET integrates two independent N-channel devices in a single ultra-small SOT666 package (1.6 × 1.2 × 0.55 mm), sharing no internal connection between channels. Each transistor features trench-gate architecture optimized for low on-resistance and fast switching, with gate threshold voltage (V_GS(th)) tightly distributed between 0.5 V and 0.95 V at 250 µA.

Thermal performance is defined by R_th(j-sp) = 115 K/W (per device), enabling efficient heat transfer to PCB solder points, while dynamic parameters - including Q_G(tot) = 0.45–0.68 nC, t_d(on) = 6–12 ns, and t_d(off) = 86–172 ns - support high-frequency PWM and digital load switching up to several MHz.

Key Specifications

Pinout & Package

SOT666 is a 6-lead, 0.5 mm pitch, ultra-flat surface-mount plastic package measuring 1.6 mm × 1.2 mm × 0.55 mm. Its symmetrical layout and exposed drain pads support high-density routing and thermal management on compact PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel low-side switching applications.

Compared with PMDT290UNE, DMN2004LKQ-7 trades size and speed for footprint familiarity, while FDMA1023NZ improves thermal and conduction performance at the cost of added ESD circuitry and larger area - making PMDT290UNE optimal for ultra-compact, ESD-sensitive, medium-current switching.

Availability

PMDT290UNE is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side loadswitches, and switching circuits requiring stable component supply and consistent SOT666 packaging.

Supply support for PMDT290UNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.

The PMDT290UNE belongs to Nexperia's TrenchMOS® dual-transistor portfolio, engineered specifically for space-constrained consumer, computing, and industrial applications demanding low R_DS(on), fast switching, and robust ESD tolerance.

FAQ

What is the maximum continuous drain current per channel at 100 °C ambient?

At T_amb = 100 °C, the maximum continuous drain current per channel is 500 mA, as specified in Table 5 (Limiting values). This derating accounts for thermal resistance and safe operating area constraints under sustained operation on standard FR4 PCBs.

Can PMDT290UNE be used in automotive applications?

No - the datasheet explicitly states this device is non-automotive qualified. It has not undergone AEC-Q101 stress testing or automotive-grade reliability validation, and Nexperia disclaims liability for use in safety-critical or automotive environments.

How is thermal performance affected when both transistors operate simultaneously?

When both channels conduct, total power dissipation is additive, but junction-to-ambient thermal resistance degrades to 250 K/W (per device, Table 6). This results in ~15% higher junction temperature rise versus single-channel operation at identical current levels.

What is the significance of the "AE" marking on the device body?

"AE" is the manufacturer-specific marking code for PMDT290UNE, as confirmed in Table 4. It enables traceability and verification of authenticity against Nexperia's official marking guide and helps distinguish it from similar SOT666-packaged devices.