Nexperia USA Inc. PMDT290UNEH

Overview

PMDT290UNE from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT666 package, designed for low-side switching and high-speed line driving. It delivers 800 mA continuous drain current per transistor at V_GS = 4.5 V, with R_DS(on) = 290 mΩ (typ) at 500 mA/25 °C, 20 V V_DS rating, and integrated ESD protection up to 2 kV - enabling compact loadswitching in space-constrained consumer and industrial PCBs.

For engineers reviewing the PMDT290UNE datasheet, PMDT290UNE pinout, PMDT290UNE application, or PMDT290UNE equivalent, key selection criteria include per-transistor R_DS(on) temperature stability, gate charge (Q_G(tot) = 0.45–0.68 nC), thermal resistance (R_th(j-a) = 330 K/W typical on FR4), and dual-channel isolation for independent control in relay driver or bus-switching topologies.

Technical Context

This dual MOSFET integrates two fully isolated N-channel channels in a single ultra-small SOT666 package. Each channel features trench-gate architecture optimized for fast switching (t_d(on) = 6–12 ns, t_f = 31 ns) and low gate drive requirements (V_GS(th) = 0.5–0.95 V), supporting logic-level operation from 1.8 V to 4.5 V gate drive.

Thermal design is constrained by junction-to-ambient R_th(j-a) = 330 K/W (per transistor, FR4, 1 cm² drain pad) and derating curves showing 50% power reduction at T_j = 125 °C. Safe operating area (SOA) supports peak drain current of 3.2 A (10 µs pulse) at V_DS ≤ 10 V, confirming suitability for transient-loaded switching circuits.

Key Specifications

Pinout & Package

The PMDT290UNE is housed in a 6-pin SOT666 surface-mount plastic package (1.6 mm × 1.2 mm × 0.55 mm body, 0.5 mm pitch), optimized for high-density PCB layouts and reflow soldering per IPC-7095 guidelines.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel low-side switching applications.

Compared with DMN2004LSD-13 and FDMA1023NZ, PMDT290UNE uniquely balances 20 V rating, 290 mΩ R_DS(on), 2 kV ESD, and SOT666 size - making it the only option qualified for compact, noise-immune, medium-voltage dual switching in commercial-grade industrial controls.

Availability

PMDT290UNE is available at Aetrix Electronics and suitable for relay driver circuits, high-speed line interfaces, and low-side loadswitching applications requiring stable component supply, consistent parametric performance, and long-term manufacturability in high-mix electronics production.

Supply support for PMDT290UNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on essential efficiency technologies - delivering high-performance, reliable discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The PMDT290UNE belongs to Nexperia's TrenchMOS dual-transistor portfolio, engineered specifically for space-constrained, low-power switching applications where thermal efficiency, ESD resilience, and logic-level drivability are prioritized over automotive qualification.

FAQ

What is the maximum continuous drain current per channel at 100 °C ambient temperature?

The PMDT290UNE supports 500 mA continuous drain current per transistor at T_amb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal constraints of the SOT666 package on standard FR4 PCBs; actual current depends on copper area and airflow. The device remains within safe SOA up to 3.2 A for 10 µs pulses even at elevated temperatures.

Can both channels be used simultaneously with independent gate drives?

Yes - the PMDT290UNE contains two fully isolated N-channel MOSFETs (TR1 and TR2) with no internal connection between channels. Pins 1–2–6 form TR1 (S1–G1–D1); pins 3–4–5 form TR2 (D2–S2–G2). Independent gate control enables asynchronous switching, phase-split operation, or redundancy schemes without crosstalk or shared thermal coupling beyond package-level conduction.

Is the SOT666 package lead-free and RoHS compliant?

Yes - the PMDT290UNE is manufactured in a lead-free, halogen-free, RoHS-compliant SOT666 package per Nexperia's product compliance documentation (v.2, December 2022). The package meets JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) and is qualified for standard SnAgCu reflow profiles up to 260 °C peak temperature, as validated in Section 13 (Soldering).

Does the device include body diode functionality, and what is its forward voltage?

Each channel includes an inherent source-drain body diode. At I_S = 300 mA and T_j = 25 °C, the typical forward voltage (V_SD) is 0.77 V, with a range of 0.48–1.2 V (Table 7). This diode enables freewheeling in inductive loads like relays, but is not rated for continuous reverse conduction - external Schottky diodes are recommended for high-repetition flyback energy recovery.