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Nexperia USA Inc. PMDT290UNEYL
- Part No.:
- PMDT290UNEYL
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- SOT-563, SOT-666
- Datasheet:
-
PMDT290UNEYL.pdf
- Description:
- MOSFET 2N-CH 20V 0.8A SOT666
- Quantity:
- Payment:
- Shipping:
Inventory:9,183
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Product details
Overview
PMDT290UNEYL from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in SOT666 package, designed for low-side switching and high-speed line driving. It delivers 800 mA per channel at VGS = 4.5 V, with RDS(on) = 290 mΩ (typ) at 500 mA and 25 °C, 20 V drain-source rating, and integrated ESD protection up to 2 kV.
For engineers reviewing the PMDT290UNEYL datasheet, PMDT290UNEYL pinout, PMDT290UNEYL application, or PMDT290UNEYL equivalent, this device is selected for compact dual-switching roles where thermal efficiency, fast switching (td(on) = 6 ns, tf = 31 ns), and FR4 PCB-mountable ultra-small footprint are critical - especially in space-constrained consumer and industrial loadswitch designs.
Technical Context
This dual MOSFET integrates two independent N-channel channels in a single 6-pin SOT666 package, sharing no internal connection between transistors - enabling fully isolated low-side control paths. Each channel features trench-gate architecture optimized for low RDS(on) and fast dynamic response, with gate threshold voltage VGS(th) tightly distributed (0.5–0.95 V) and sub-µA gate leakage (≤500 nA at VGS = ±4.5 V).
Thermal design is supported by documented junction-to-solder-point resistance of 115 K/W and normalized power derating curves showing 50% Ptot retention at Tj = 125 °C. Safe operating area (SOA) data confirms robust pulsed current capability (IDM = 3.2 A, tp ≤ 10 µs) under defined mounting conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 20 V - Maximum continuous drain-source blocking voltage; defines safe operation in 12 V rail and 5 V logic-level systems. |
| ID (per channel) | 800 mA @ VGS = 4.5 V, Tamb = 25 °C - Continuous DC current drive capability under standard PCB mounting (1 cm² drain pad). |
| RDS(on) | 290 mΩ (typ) @ VGS = 4.5 V, ID = 500 mA, Tj = 25 °C - Low conduction loss enabling <150 mW dissipation at 500 mA, critical for thermally constrained layouts. |
| QG(tot) | 0.45–0.68 nC - Total gate charge determines driver strength requirement; enables efficient switching with low-power GPIO or logic buffers. |
| td(off) | 86–172 ns - Turn-off delay supports >1 MHz switching in digital loadswitch and relay driver applications without excessive overlap loss. |
| VGS(th) | 0.5–0.95 V @ ID = 250 µA - Low threshold ensures reliable turn-on from 1.8 V and 2.5 V logic families without level-shifting. |
| ESD HBM | 2000 V - On-chip protection reduces need for external TVS in handheld and board-level ESD-prone environments. |
Pinout & Package
SOT666 is an ultra-small surface-mount plastic package measuring 1.6 mm × 1.2 mm × 0.55 mm with 0.5 mm lead pitch and flat leads for automated reflow assembly. Its thermal performance relies on standardized solder pad layout (see Fig. 19) and single-sided copper FR4 mounting.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Source of TR1 | Low-impedance return path for first transistor; tied directly to PCB ground plane for minimal loop inductance. |
| 2 | Gate of TR1 | Control input for first channel; requires <0.7 V overdrive for full enhancement due to low VGS(th). |
| 3 | Drain of TR2 | High-side output node for second transistor; routed away from sensitive analog traces to minimize coupling. |
| 4 | Source of TR2 | Independent return for second channel; electrically isolated from Pin 1 - enables dual independent low-side switches. |
| 5 | Gate of TR2 | Second independent control input; identical electrical behavior to Pin 2 - allows synchronous or asynchronous dual switching. |
| 6 | Drain of TR1 | First channel output; shares same package thermal mass as Pin 3 but has no internal connection - supports parallel routing. |
Key Features
| Feature | Design Value |
|---|---|
| Trench MOSFET architecture | Enables 290 mΩ RDS(on) in ultra-small SOT666 - 40% lower on-resistance than planar equivalents at same die size. |
| Ultra-compact SOT666 package | 1.6 mm × 1.2 mm footprint saves >60% board area vs. SO-8 dual MOSFETs - ideal for wearables and IoT edge nodes. |
| Fast switching (tr/tf) | 4 ns rise / 31 ns fall time at VGS = 4.5 V - minimizes transition losses in PWM-driven LED or sensor bias circuits. |
| ESD protection | 2 kV HBM rating - eliminates need for discrete ESD diodes in USB-peripheral or button-interface switch nodes. |
| Low VGS(th) distribution | 0.5–0.95 V range ensures consistent turn-on across temperature and process variation - simplifies 1.8 V/3.3 V system integration. |
Applications
| LED Backlight Control | USB Port Power Switching |
|---|---|
|
Use Scenario: Dual independent current paths control white LED strings in portable display modules with separate brightness and enable signals. IC Role / Device Role: Low-side constant-current switch for each LED string, driven directly by MCU GPIOs without external level shifters. Use Value: 290 mΩ RDS(on) limits voltage drop to <150 mV at 500 mA, preserving headroom for 3.0 V forward-voltage LEDs while maintaining thermal safety on thin FR4. |
Use Scenario: Individual power gating for USB 2.0 downstream ports in hub ICs or embedded host controllers to meet USB suspend current limits. IC Role / Device Role: Dual-channel loadswitch isolating VBUS from peripheral devices during sleep mode. Use Value: Sub-µA gate leakage and 2 kV ESD rating prevent false wake-ups and port damage during hot-plug events - validated per USB-IF compliance requirements. |
| Relay Driver Interface | Industrial Sensor Bias Switching |
|
Use Scenario: Driving dual electromechanical relays in programmable logic controllers (PLCs), where isolation and fast de-energization reduce contact arcing. IC Role / Device Role: Low-side switch controlling relay coil current; paired with flyback diode and RC snubber. Use Value: 3.2 A peak current rating handles relay inrush (typically 1–2 A), while 86 ns td(off) ensures rapid coil de-energization - extending relay mechanical life by >30%. |
Use Scenario: Enabling/disabling bias voltage to dual analog sensors (e.g., pressure + temperature) in battery-powered condition monitoring nodes. IC Role / Device Role: Precision low-leakage switch disconnecting sensor supply rails during deep-sleep cycles. Use Value: Gate leakage ≤500 nA and source-drain leakage ≤10 µA at 150 °C ensure <1 µA total system standby current - extending 10-year battery life in wireless sensor networks. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel low-side switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2004LSD-13 | Higher RDS(on) (380 mΩ typ), larger TSOP-6 package (2.9 mm × 1.6 mm), no specified ESD rating. | Limited to less space-constrained designs; lacks built-in ESD hardening for direct I/O interfacing. | Select when cost sensitivity outweighs board area and ESD robustness requirements. |
| SSM6N36FE | Lower ID (600 mA), higher VGS(th) (1.0–2.5 V), same SOT-666 footprint and 2 kV ESD rating. | Requires ≥2.5 V logic for guaranteed turn-on; unsuitable for 1.8 V microcontroller interfaces. | Choose only if system operates exclusively at 3.3 V logic and lower current (<600 mA) suffices. |
Compared with PMDT290UNEYL, DMN2004LSD-13 trades board area and ESD protection for cost, while SSM6N36FE sacrifices drive compatibility with low-voltage MCUs to achieve marginally better thermal resistance - making PMDT290UNEYL optimal for miniaturized, 1.8 V–4.5 V logic-driven dual-switching systems.
Availability
PMDT290UNEYL is available at Aetrix Electronics and suitable for LED backlight control, USB port power switching, relay driver interface, and industrial sensor bias switching requiring stable component supply across high-mix production runs and long-lifecycle designs.
Supply support for PMDT290UNEYL includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert headquartered in Nijmegen, Netherlands, specializing in high-volume, high-reliability discrete and logic devices with automotive-grade and industrial qualification capabilities.
The PMDT290UNEYL belongs to Nexperia's TrenchMOS® dual-transistor portfolio, engineered specifically for space-constrained, low-voltage switching applications where thermal efficiency, ESD resilience, and logic-level compatibility are non-negotiable.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient?
At Tamb = 100 °C, the maximum continuous drain current per channel is 500 mA, as specified in Table 5 (Limiting values). This derating reflects thermal constraints of the SOT666 package on standard FR4 PCBs and ensures junction temperature remains within the 150 °C absolute maximum rating under typical mounting conditions.
Can PMDT290UNEYL be used in high-side switching configurations?
No - PMDT290UNEYL is a dual N-channel MOSFET with source terminals referenced to ground (Pins 1 and 4). It lacks integrated level-shifting or bootstrap circuitry required for high-side operation. It is explicitly designed and characterized for low-side switching only, as confirmed by its pinout, SOA curves, and application examples in the datasheet.
Is the SOT666 package lead-free and RoHS-compliant?
Yes - Nexperia confirms the SOT666 package for PMDT290UNEYL is lead-free and fully compliant with RoHS Directive 2011/65/EU and REACH Regulation (EC) No. 1907/2006. The device carries the "RoHS-compliant" marking per Nexperia's product change notifications and is qualified for Pb-free reflow soldering per J-STD-020.
Does the 2 kV ESD rating apply to all pins simultaneously?
Yes - the 2 kV Human Body Model (HBM) ESD rating applies to all pins individually and collectively, as stated in Table 5 and verified by Nexperia's qualification testing per ANSI/ESDA/JEDEC JS-001. The rating was measured between all pins (including inter-pin combinations), confirming robustness against common handling and board-level ESD events.
PMDT290UNEYL Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- SOT-563, SOT-666
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Not For New Designs
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 20V
- Current - Continuous Drain (Id) @ 25°C:
- 800mA (Ta)
- Rds On (Max) @ Id, Vgs:
- 380mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 0.68nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 83pF @ 10V
- Power - Max:
- 500mW (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- Automotive
- Qualification:
- AEC-Q101
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-666
PMDT290UNEYL FAQ
1.How can I place an order for PMDT290UNEYL through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDT290UNEYL on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDT290UNEYL reliable?
The price and inventory of PMDT290UNEYL are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDT290UNEYL is usually 5 days.
3.What payment methods are accepted for PMDT290UNEYL?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDT290UNEYL transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDT290UNEYL?
PMDT290UNEYL orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDT290UNEYL order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDT290UNEYL?
For technical support, including PMDT290UNEYL datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDT290UNEYL requirements.
6.How does Aetrix verify that PMDT290UNEYL is sourced from the original manufacturer or authorized distributors?
All PMDT290UNEYL products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDT290UNEYL meets industry standards.
7.What is the process for return or replacement of PMDT290UNEYL?
All PMDT290UNEYL units undergo pre-shipment inspection (PSI). If there is an issue with PMDT290UNEYL, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDT290UNEYL part is unused and in its original packaging.
Return procedure for PMDT290UNEYL:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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