Nexperia USA Inc. PMDT670UPE,115

Overview

PMDT670UPE from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in SOT666 package, designed for high-side load switching and relay driving. It delivers −20 V drain-source voltage rating, −550 mA continuous drain current per transistor at 25 °C, and 0.67 Ω typical R_DS(on) at V_GS = −4.5 V - enabling compact, low-loss power control in space-constrained industrial and consumer PCBs.

For engineers reviewing the PMDT670UPE datasheet, PMDT670UPE pinout, PMDT670UPE application, or PMDT670UPE equivalent, key selection criteria include dual-channel P-channel topology, ultra-small SOT666 footprint (1.6 × 1.2 × 0.55 mm), thermal resistance of 250 K/W (per device, junction-to-ambient), ESD robustness (2 kV HBM), and fast switching with 18 ns turn-on delay and 72 ns fall time.

Technical Context

This dual MOSFET integrates two independent P-channel Trench devices in a single ultra-compact SOT666 package, sharing no internal connection between channels - enabling fully isolated high-side switch control. Each channel features gate-source threshold voltage of −0.5 to −1.3 V and exhibits sub-1 V source-drain diode forward voltage at −300 mA.

Its Trench MOSFET architecture enables low R_DS(on) at low gate drive voltages (e.g., 1.2 Ω at V_GS = −2.5 V), while dynamic parameters - including 0.76 nC total gate charge and 58 pF input capacitance - support efficient 1–10 MHz switching in DC-DC and load management circuits.

Key Specifications

Pinout & Package

The PMDT670UPE uses the SOT666 surface-mount plastic package: 6-pin, 0.5 mm pitch, 1.6 mm × 1.2 mm × 0.55 mm body, with exposed drain pads optimized for thermal performance on FR4 PCBs.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Compared with DMN2053UCB4-7 and TPS22967DQAR, the PMDT670UPE uniquely combines true dual-channel independence, ultra-compact SOT666 packaging, and discrete MOSFET flexibility - making it optimal for space-constrained, cost-sensitive, and timing-critical high-side switching where integrated protection is unnecessary.

Availability

PMDT670UPE is available at Aetrix Electronics and suitable for relay driver modules, high-speed line drivers, and high-side loadswitch designs requiring stable component supply across industrial automation, IoT endpoint, and portable instrumentation programs.

Supply support for PMDT670UPE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability standard products - delivering discrete, logic, and MOSFET solutions for automotive, industrial, and consumer markets.

The PMDT670UPE belongs to Nexperia's TrenchMOS® dual P-channel portfolio, engineered specifically for miniaturized high-side power switching in space- and efficiency-critical applications.

FAQ

What is the maximum safe operating voltage for PMDT670UPE in continuous DC applications?

The absolute maximum drain-source voltage (V_DS) is −20 V, and this rating applies under all continuous DC conditions. Operation above this value risks irreversible avalanche breakdown. For reliable long-term use, design margins should limit steady-state V_DS to ≤ −16 V when ambient temperature exceeds 85 °C, based on the device's SOA curves and thermal derating data.

Can PMDT670UPE be driven directly from a 3.3 V microcontroller GPIO without level shifting?

Yes - its gate-threshold voltage range (−0.5 V to −1.3 V) and strong transconductance (610 mS typ) allow full enhancement at V_GS = −3.3 V. At that drive level, R_DS(on) rises to ~1.5 Ω (typ), yielding ~675 mW conduction loss at −400 mA - acceptable for intermittent or thermally managed operation. For continuous −550 mA, −4.5 V drive is recommended.

How does the SOT666 package affect thermal performance compared to larger packages like SO-8?

The SOT666 achieves 250 K/W junction-to-ambient thermal resistance (per device) on standard FR4 - comparable to many SO-8 dual MOSFETs despite its 1/5 footprint. This is enabled by optimized copper pad layout (1 cm² drain pad) and thin mold compound. However, its lower thermal mass means faster transient temperature rise; pulsed operation must respect the normalized power derating curve (Fig. 1) and peak current limits (2.2 A).

Is PMDT670UPE suitable for automotive applications?

No - the datasheet explicitly states "non-automotive qualification" in the revision history. It lacks AEC-Q101 stress testing, automotive-grade process controls, and guaranteed PPAP documentation. For automotive high-side switching, Nexperia's AS-series equivalents (e.g., PMDT670UPE-Q) or automotive-qualified alternatives must be used instead.