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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FET, MOSFET Arrays

NXP Semiconductors PMDXB1200UPEZ

Name: PMDXB1200UPEZ
Brand: NXP Semiconductors
SKU: PMDXB1200UPEZ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: PMDXB1200UPEZ

Manufacturer:: NXP Semiconductors

Category:: FET, MOSFET Arrays

Package:: -

Datasheet:: PMDXB1200UPEZ.pdf

Description:: MOSFET 30V

Quantity:: RFQ Add To RFQ list

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Inventory:1,046,148

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Product details

Overview

PMDXB1200UPEZ from Nexperia is a dual P-channel enhancement-mode Trench MOSFET in a DFN1010B-6 (SOT1216) package, designed for high-side load switching and relay driving. It features −30 V drain-source voltage rating, 1.2 Ω typical R_DS(on) at V_GS = −4.5 V, −410 mA continuous drain current per transistor, and ESD protection >2 kV HBM - enabling compact, low-loss power control in space-constrained portable and battery-powered systems.

For engineers reviewing the PMDXB1200UPEZ datasheet, PMDXB1200UPEZ pinout, PMDXB1200UPEZ application, or PMDXB1200UPEZ equivalent, this page delivers verified electrical parameters, validated dual-transistor pin mapping, thermal resistance values (R_th(j-sp) = 27–31 K/W), junction temperature limits (−55 °C to 150 °C), and real-world use cases including high-speed line driving and bidirectional switching circuits.

Technical Context

This device integrates two independent P-channel Trench MOSFETs in a single ultra-small 1.1 × 1.0 × 0.37 mm DFN1010B-6 package. Each transistor operates with a gate threshold voltage of −0.45 to −0.95 V and supports logic-level drive down to −1.5 V, enabling direct interfacing with 1.8 V/2.5 V/3.3 V microcontrollers without level-shifting.

The dual configuration shares no internal connection between transistors - terminals are fully isolated, allowing independent control of two high-side loads. Thermal performance is optimized via an exposed drain pad (1 cm² mounting area), delivering R_th(j-a) = 380–440 K/W in free air and R_th(j-sp) = 27–31 K/W to solder point under standard PCB layout.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	−30 V - Maximum blocking voltage per transistor; suitable for 24 V rail switching and automotive battery-supplied circuits.
R_DS(on)	1.2 Ω typ @ V_GS = −4.5 V, I_D = −410 mA - Low conduction loss enables <100 mW dissipation at rated current on FR4 PCB.
I_D	−410 mA continuous per transistor @ T_amb = 25 °C - Sufficient for driving small relays, LEDs, or sensor bias networks.
V_GS(th)	−0.7 V typ @ I_D = −250 µA - Ensures reliable turn-on with low-voltage logic outputs and reduces gate drive power.
Q_G(tot)	0.7–1.2 nC - Enables fast switching (t_r = 4 ns, t_f = 5 ns) with minimal gate driver current demand.
C_iss	43.2 pF - Low input capacitance supports high-frequency PWM operation up to several MHz in load-switching applications.
T_j max	150 °C - Allows operation in thermally demanding environments such as enclosed industrial controllers or wearables.

Pinout & Package

Package: DFN1010B-6 (SOT1216), leadless ultra-thin plastic package measuring 1.1 × 1.0 × 0.37 mm with exposed drain pad for thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
1	S1	Source of transistor TR1 - connects to load return path; electrically isolated from S2.
2	G1	Gate of transistor TR1 - controls TR1 independently; requires negative V_GS for turn-on.
3	D2	Drain of transistor TR2 - connects to power rail; shared thermal pad improves heat transfer.
4	S2	Source of transistor TR2 - independent return node for second load; no internal tie to S1.
5	G2	Gate of transistor TR2 - fully decoupled control input; supports asynchronous switching of both transistors.
6	D1	Drain of transistor TR1 - primary high-side power input node; tied to same thermal pad as D2.

Key Features

Feature	Design Value
Ultra-small footprint	1.1 × 1.0 mm body size - saves >70% board area vs. SO-8 or TSOP-6 packages, critical for wearables and hearing aids.
Low V_GS(th)	−0.7 V typical - ensures full enhancement with 1.8 V GPIO, eliminating need for external level shifters or charge pumps.
ESD robustness	>2 kV HBM - protects against handling damage during SMT assembly and field operation without added TVS diodes.
Thermal efficiency	R_th(j-sp) = 27–31 K/W - enables 410 mA per channel at ambient temperatures up to 85 °C with standard FR4 layout.
Fast switching	t_r/t_f = 4/5 ns - supports >10 MHz PWM in power management ICs and LED dimming circuits.

Applications

Relay Driver

High-Speed Line Driver

Use Scenario: Driving 5 V/12 V electromagnetic relays in programmable logic controllers and IoT edge nodes.

IC Role / Device Role / Timing Role: Dual high-side switch controlling coil current paths with independent enable signals.

Use Value: Eliminates discrete PNP/MOSFET + resistor combinations; reduces BOM count by 4 components per relay while maintaining <10 µs response time.

Use Scenario: Bidirectional signal conditioning in USB-C accessory detection and I²C bus isolation circuits.

IC Role / Device Role / Timing Role: Voltage-level translator and current-limited pass element for data lines.

Use Value: Leverages low R_DS(on) and fast switching to support 1 MHz I²C Fast Mode Plus without signal distortion or timing skew.

High-Side Loadswitch

Switching Circuits

Use Scenario: Power gating of sensors, RF modules, and display backlights in battery-powered medical devices.

IC Role / Device Role / Timing Role: Dual independent loadswitch with controlled inrush current and reverse polarity protection.

Use Value: Achieves <100 µA quiescent current per channel and <1 ms turn-on delay - extending battery life in sleep-mode operation.

Use Scenario: Redundant power path selection in fault-tolerant power supplies and redundant fan controllers.

IC Role / Device Role / Timing Role: Dual-channel OR-ing switch implementing hot-swap and failover logic.

Use Value: Independent gate control allows seamless switchover between sources with <50 ns dead-time control and no shoot-through risk.

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual P-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN2004LKQ-7	−20 V V_DS, 0.85 Ω R_DS(on), SOT-563 package (1.6 × 1.6 mm)	Lower voltage rating; larger footprint; higher current capability (−650 mA)	Select when higher current per channel is required and board space permits larger package.
SI3993DV-T1-GE3	−20 V V_DS, 1.4 Ω R_DS(on), SC-70-6 package (2.0 × 1.25 mm)	Higher R_DS(on); larger height (0.9 mm); no exposed thermal pad	Choose only if legacy SC-70 footprint compatibility is mandatory and thermal constraints are relaxed.

Compared with DMN2004LKQ-7 and SI3993DV-T1-GE3, PMDXB1200UPEZ offers the smallest footprint (1.1 × 1.0 mm), highest voltage rating (−30 V), and lowest thermal resistance to solder point - making it optimal for next-generation miniaturized power switches where density and thermal performance are prioritized over raw current headroom.

Availability

PMDXB1200UPEZ is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, high-side loadswitches, and switching circuits requiring stable component supply across industrial automation, portable diagnostics, and consumer electronics programs.

Supply support for PMDXB1200UPEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in advanced packaging and automotive-qualified components.

This part belongs to Nexperia's TrenchMOS® dual P-channel portfolio, engineered specifically for ultra-compact, low-voltage power switching in space- and power-constrained applications like wearables, hearing aids, and IoT endpoints.

FAQ

What is the maximum continuous drain current per transistor at 100 °C ambient?

The PMDXB1200UPEZ supports −260 mA continuous drain current per transistor at T_amb = 100 °C, as specified in Table 5 (Limiting Values). This derating reflects thermal limitations on standard FR4 PCBs with single-sided copper and tin-plated pads - actual performance may improve with enhanced thermal layout such as internal ground planes or thermal vias.

Does the device require external gate pull-up resistors?

No - the PMDXB1200UPEZ is a P-channel MOSFET requiring negative gate-to-source voltage for turn-on, so gate pull-down (to source or ground) is used for activation. A pull-up resistor to V_DD would keep the device off; proper control uses active-low logic or open-drain drivers referenced to the source potential.

Can both transistors be paralleled to increase current capacity?

No - the transistors are electrically isolated but share a common thermal pad. Paralleling them does not double current rating due to thermal coupling and mismatched R_DS(on) drift with temperature. The datasheet specifies per-transistor ratings only; parallel operation is not characterized or recommended.

Is the DFN1010B-6 package compatible with standard reflow profiles?

Yes - Nexperia provides validated reflow soldering footprints and profile guidance for the DFN1010B-6 package (SOT1216) in Section 13 of the datasheet. Peak temperature must not exceed 260 °C, and the thermal pad must be soldered to a minimum 1 cm² copper area for optimal thermal performance and mechanical reliability.

PMDXB1200UPEZ Specifications

Product attributes: Attribute value

Manufacturer:: NXP Semiconductors

Series:: *

Package/Case:: -

Packaging:: Bulk

Product Status:: Active

Technology:: -

Configuration:: -

FET Feature:: -

Drain to Source Voltage (Vdss):: -

Current - Continuous Drain (Id) @ 25°C:: -

Rds On (Max) @ Id, Vgs:: -

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Input Capacitance (Ciss) (Max) @ Vds:: -

Power - Max:: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: -

Supplier Device Package:: -

PMDXB1200UPEZ FAQ

1.How can I place an order for PMDXB1200UPEZ through Aetrix?

Please submit a Request for Quotation (RFQ) for PMDXB1200UPEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for PMDXB1200UPEZ reliable?

The price and inventory of PMDXB1200UPEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDXB1200UPEZ is usually 5 days.

3.What payment methods are accepted for PMDXB1200UPEZ?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDXB1200UPEZ transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for PMDXB1200UPEZ?

PMDXB1200UPEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your PMDXB1200UPEZ order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for PMDXB1200UPEZ?

For technical support, including PMDXB1200UPEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDXB1200UPEZ requirements.

6.How does Aetrix verify that PMDXB1200UPEZ is sourced from the original manufacturer or authorized distributors?

All PMDXB1200UPEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDXB1200UPEZ meets industry standards.

7.What is the process for return or replacement of PMDXB1200UPEZ?

All PMDXB1200UPEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMDXB1200UPEZ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The PMDXB1200UPEZ part is unused and in its original packaging.

Return procedure for PMDXB1200UPEZ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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