Nexperia USA Inc. PMDXB290UNEZ

Overview

PMDXB290UNE from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in a DFN1010B-6 (SOT1216) package, designed for low-side load switching and high-speed line driving. It features 20 V drain-source voltage rating, 270 mΩ typical R_DS(on) at V_GS = 4.5 V and I_D = 1.2 A, and ESD protection >2 kV HBM - enabling compact, robust switching in space-constrained portable and battery-powered systems.

For engineers reviewing the PMDXB290UNE datasheet, PMDXB290UNE pinout, PMDXB290UNE application, or PMDXB290UNE equivalent, key selection criteria include its ultra-small 1.1 mm × 1.0 mm footprint, dual-channel integration for matched switching, low 0.7 V gate threshold, fast 1 ns turn-on delay, and thermal resistance of 21 K/W (junction-to-solder point) on standard FR4 PCBs.

Technical Context

This dual MOSFET integrates two independent N-channel devices sharing no internal connection - each with separate gate, source, and drain terminals. Its Trench MOSFET architecture delivers low R_DS(on) and fast switching (t_r = 3 ns, t_f = 3 ns) while maintaining stable sub-threshold behavior down to V_GS = 1.2 V.

The device operates within ±8 V gate-source voltage limits and supports continuous drain current up to 930 mA at 25 °C ambient (derated to 590 mA at 100 °C), with peak pulse capability of 14 A (10 µs). Its 1.5 V typical V_GS(th) enables direct drive from 1.8 V and 3.3 V logic without level shifting.

Key Specifications

Pinout & Package

Package: DFN1010B-6 (SOT1216), ultra-thin 1.1 mm × 1.0 mm × 0.37 mm body, leadless, thermally enhanced, 0.35 mm pitch. Exposed drain pads (Pins 1, 6, 7, 8) provide low thermal resistance and dual-channel isolation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar dual N-channel MOSFET applications.

Compared with DMN2020LSD-13 and AOB290, PMDXB290UNE uniquely balances ultra-compact size, dual-channel integration, low-threshold drive, and built-in ESD protection - making it optimal for space- and power-sensitive portable electronics where both channels must operate independently under 1.8–3.3 V logic control.

Availability

PMDXB290UNE is available at Aetrix Electronics and suitable for USB power delivery, smartphone backlight control, wearable sensor gating, and IoT button debounce circuits requiring stable component supply, consistent parametric performance, and long-term production continuity.

Supply support for PMDXB290UNE includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, serving automotive, industrial, mobile, and computing markets with scalable manufacturing and rigorous quality systems.

The PMDXB290UNE belongs to Nexperia's TrenchMOS® dual small-signal MOSFET product line, engineered specifically for miniaturized, battery-operated consumer electronics demanding low-voltage drive, fast switching, and robust ESD tolerance in sub-1 mm² footprints.

FAQ

What is the maximum continuous drain current for PMDXB290UNE at 85 °C ambient temperature?

At 85 °C ambient temperature, the maximum continuous drain current per channel is 720 mA. This value is derived from linear derating of the 930 mA rating at 25 °C using the normalized current curve in Figure 3 of the datasheet, accounting for thermal resistance and PCB mounting conditions.

Can PMDXB290UNE be used in a high-side switching configuration?

No - PMDXB290UNE is a dual N-channel MOSFET with no integrated charge pump or bootstrap circuitry. High-side operation would require gate voltage exceeding the source potential, which this device cannot self-generate. It is specified and validated exclusively for low-side switching applications.

Is the DFN1010B-6 package compatible with standard reflow soldering profiles?

Yes - the DFN1010B-6 package is qualified for lead-free reflow soldering per JEDEC J-STD-020. Recommended peak temperature is 260 °C for ≤30 seconds, with preheat ramp rate ≤3 °C/s and time above 217 °C limited to 60–150 seconds, matching standard Class 3 IPC-A-610 profiles.

Does PMDXB290UNE have body diode conduction capability in reverse direction?

Yes - each channel includes an inherent source-drain body diode with typical forward voltage of 0.9 V at 0.7 A and 25 °C junction temperature. This enables freewheeling in inductive loads, though the diode is not rated for continuous reverse recovery stress and should not be relied upon for high-frequency flyback energy transfer.