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Nexperia USA Inc. PMDXB550UNEZ
- Part No.:
- PMDXB550UNEZ
- Manufacturer:
- Nexperia USA Inc.
- Category:
- FET, MOSFET Arrays
- Package:
- 6-XFDFN Exposed Pad
- Datasheet:
-
PMDXB550UNEZ.pdf
- Description:
- MOSFET 2N-CH 30V 0.59A 6DFN
- Quantity:
- Payment:
- Shipping:
Inventory:31,763
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Product details
Overview
PMDXB550UNEZ from Nexperia is a dual N-channel enhancement-mode Trench MOSFET in a DFN1010B-6 (SOT1216) package, designed for low-voltage switching applications. It delivers 30 V drain-source voltage rating, 590 mA continuous drain current per transistor at 4.5 V gate drive, and 550 mΩ typical RDS(on) at VGS = 4.5 V and Tj = 25 °C - enabling compact high-speed load switching in space-constrained PCBs.
For engineers reviewing the PMDXB550UNEZ datasheet, PMDXB550UNEZ pinout, PMDXB550UNEZ application, or PMDXB550UNEZ equivalent, key selection criteria include ultra-small 1.1 × 1.0 × 0.37 mm footprint, dual independent channel layout, low 0.7 V typical gate threshold, ESD protection >2 kV HBM, and thermal performance enabled by exposed drain pad mounting on 1 cm² FR4 copper.
Technical Context
This dual discrete MOSFET integrates two identical N-channel Trench devices in a single leadless DFN1010B-6 package with shared thermal path via exposed drain terminals. Each channel operates independently with separate gate and source connections, supporting asynchronous control of two low-side loads.
The device uses Trench MOSFET technology to achieve low RDS(on) at low gate voltages (down to 1.5 V), while maintaining robust safe operating area (SOA) up to 2.3 A peak drain current (10 µs pulse). Thermal resistance from junction to solder point is 27–31 K/W, optimized for direct thermal coupling to PCB copper.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDS | 30 V maximum - supports rail-to-rail switching in 24 V and lower systems without breakdown risk. |
| RDS(on) | 550 mΩ typ @ VGS = 4.5 V, ID = 590 mA - enables <1.5 W conduction loss per channel at rated current. |
| VGS(th) | 0.7 V typ @ ID = 250 µA - ensures reliable turn-on with 1.8 V and 2.5 V logic-level microcontrollers. |
| ID (cont) | 590 mA per transistor @ Tamb = 25 °C - sufficient for driving small relays, LEDs, or sensor bias circuits. |
| QG(tot) | 0.6–1.05 nC - low gate charge enables fast switching (tr = 7 ns, tf = 3 ns) with minimal driver power demand. |
| Rth(j-sp) | 27–31 K/W - allows direct thermal transfer to PCB solder pad, critical for sustained operation in sealed enclosures. |
| ESD HBM | >2 kV - eliminates need for external ESD protection in handheld or I/O-connected designs. |
Pinout & Package
Package: DFN1010B-6 (SOT1216), 1.1 × 1.0 × 0.37 mm, leadless, ultra-thin, with exposed drain pad for thermal conduction.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | S1 | Source terminal of transistor 1 - connects to ground or low-side return path for first load. |
| 2 | G1 | Gate terminal of transistor 1 - accepts logic-level control signal; low Ciss (30.3 pF) minimizes drive requirements. |
| 3 | D2 | Drain terminal of transistor 2 - connects to second load's high-side node; shares thermal pad with Pin 6 and Pin 8. |
| 4 | S2 | Source terminal of transistor 2 - independent return path for second load, electrically isolated from S1. |
| 5 | G2 | Gate terminal of transistor 2 - fully independent control input; enables asynchronous dual-load management. |
| 6 | D1 | Drain terminal of transistor 1 - connects to first load's high-side node; thermally coupled to PCB via exposed pad. |
| 7 | D1 | Second connection to drain of transistor 1 - redundant terminal enhancing current handling and thermal spreading. |
| 8 | D2 | Second connection to drain of transistor 2 - improves current sharing and reduces thermal resistance under load. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-small footprint | 1.1 × 1.0 mm body size - saves >70% board area vs. SO-8 or TSOP-6 equivalents in wearable and IoT modules. |
| Exposed drain pad | Thermal resistance to solder point as low as 27 K/W - enables 4030 mW total power dissipation with proper PCB copper layout. |
| Low VGS(th) | 0.45–0.95 V range - guarantees turn-on with 1.2 V supply rails and eliminates need for level shifters in ultra-low-power systems. |
| Trench MOSFET architecture | Optimized cell density and reduced channel resistance - achieves 550 mΩ RDS(on) in sub-1 mm² die area. |
| ESD robustness | >2 kV HBM rating - withstands handling and board-level ESD events without additional protection components. |
Applications
| Relay Driver | High-Speed Line Driver |
|---|---|
Use Scenario: Driving 5 V/12 V electromagnetic relays in industrial PLC I/O modules. IC Role / Device Role / Timing Role: Low-side switch controlling relay coil current with fast turn-off to suppress back-EMF spikes. Use Value: 3 ns fall time and 12 ns turn-off delay minimize coil energy storage, reducing snubber component count and PCB footprint. |
Use Scenario: Transmitting TTL/CMOS signals across short PCB traces or flex cables in test equipment. IC Role / Device Role / Timing Role: Active pull-down element in push-pull line driver configuration for bidirectional data lines. Use Value: 7 ns rise time and 5.8 pF Coss ensure signal integrity up to 100 MHz with minimal overshoot or ringing. |
| Low-Side Load Switch | Switching Power Supply Sync Rectifier |
Use Scenario: Enabling/disabling power to sensors, LEDs, or communication peripherals in battery-powered wearables. IC Role / Device Role / Timing Role: Controlled power path switch with minimal quiescent current and fast enable/disable response. Use Value: 1 µA max IDSS and 100 nA IGSS at 25 °C preserve battery life during sleep mode; 4 ns turn-on delay enables precise timing control. |
Use Scenario: Replacing Schottky diodes in 5 V synchronous buck converters for portable medical devices. IC Role / Device Role / Timing Role: Secondary-side rectifying switch synchronized to primary-side PWM controller. Use Value: 550 mΩ RDS(on) at 4.5 V gate drive reduces conduction loss by >40% vs. 0.3 V Schottky, improving efficiency at 1 A output current. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar dual N-channel MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN2020LSD-13 | Higher RDS(on) (700 mΩ typ), larger 2 × 2 mm package, 20 V VDS rating | Limited to ≤12 V systems; less suitable for 24 V relay drivers or higher-voltage sync rectification | Select when cost sensitivity outweighs size and voltage margin requirements. |
| NTJD4152PZ | Lower VGS(th) (0.5 V typ), same 30 V rating, but 750 mΩ RDS(on) and no exposed drain pad | Thermal derating required above 300 mA; unsuitable for sustained >250 mW per channel operation | Prefer for ultra-low-threshold logic interfacing where thermal constraints are relaxed. |
Compared with PMDXB550UNEZ, DMN2020LSD-13 trades voltage headroom and miniaturization for cost, while NTJD4152PZ prioritizes gate drive compatibility over conduction efficiency and thermal performance - making PMDXB550UNEZ optimal for space- and thermally constrained 24 V dual-switching applications.
Availability
PMDXB550UNEZ is available at Aetrix Electronics and suitable for relay drivers, high-speed line drivers, low-side load switches, and synchronous rectifier circuits requiring stable component supply across high-mix, low-volume production runs.
Supply support for PMDXB550UNEZ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Nexperia is a global semiconductor expert focused on high-volume, high-reliability discrete and logic devices, with leadership in MOSFETs, ESD protection, and automotive-qualified components.
PMDXB550UNEZ belongs to Nexperia's TrenchMOS dual-FET product line, engineered specifically for miniaturized power switching in portable, industrial, and automotive-qualified applications where board space and thermal management are critical.
FAQ
What is the maximum continuous drain current per channel at 100 °C ambient temperature?
The PMDXB550UNEZ supports 370 mA continuous drain current per transistor at Tamb = 100 °C, as specified in Table 5 (Limiting values). This derating reflects thermal limits on an FR4 PCB with single-sided 1 cm² copper pad; actual current capability increases with enhanced copper area or forced airflow.
Can PMDXB550UNEZ be used in a high-side switching configuration?
No - PMDXB550UNEZ is a dual N-channel MOSFET with source terminals referenced to ground (Pins 1 and 4). High-side switching requires either P-channel devices or N-channel devices with gate drive above the supply rail; this part lacks integrated charge pump or bootstrap capability for such use.
Is the DFN1010B-6 package compatible with standard reflow profiles?
Yes - the DFN1010B-6 package is qualified for lead-free reflow soldering per JEDEC J-STD-020. Figure 20 provides the recommended solder land pattern (1.1 mm × 0.6 mm pads, 0.35 mm spacing), and thermal characteristics assume standard IPC-A-610 Class 2 process conditions.
Does PMDXB550UNEZ have integrated body diode reverse recovery protection?
Each channel includes a parasitic source-drain diode with VSD = 0.86–1.2 V at IS = 380 mA (Table 7). However, it has no dedicated reverse recovery optimization; trr is not characterized, and the diode is intended only for clamping or freewheeling - not for high-frequency synchronous rectification without external snubbing.
PMDXB550UNEZ Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Nexperia USA Inc.
- Series:
- -
- Package/Case:
- 6-XFDFN Exposed Pad
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- MOSFET (Metal Oxide)
- Configuration:
- 2 N-Channel (Dual)
- FET Feature:
- -
- Drain to Source Voltage (Vdss):
- 30V
- Current - Continuous Drain (Id) @ 25°C:
- 590mA
- Rds On (Max) @ Id, Vgs:
- 670mOhm @ 590mA, 4.5V
- Vgs(th) (Max) @ Id:
- 950mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 1.05nC @ 4.5V
- Input Capacitance (Ciss) (Max) @ Vds:
- 30.3pF @ 15V
- Power - Max:
- 285mW
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- DFN1010B-6
PMDXB550UNEZ FAQ
1.How can I place an order for PMDXB550UNEZ through Aetrix?
Please submit a Request for Quotation (RFQ) for PMDXB550UNEZ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for PMDXB550UNEZ reliable?
The price and inventory of PMDXB550UNEZ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for PMDXB550UNEZ is usually 5 days.
3.What payment methods are accepted for PMDXB550UNEZ?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for PMDXB550UNEZ transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for PMDXB550UNEZ?
PMDXB550UNEZ orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your PMDXB550UNEZ order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for PMDXB550UNEZ?
For technical support, including PMDXB550UNEZ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your PMDXB550UNEZ requirements.
6.How does Aetrix verify that PMDXB550UNEZ is sourced from the original manufacturer or authorized distributors?
All PMDXB550UNEZ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that PMDXB550UNEZ meets industry standards.
7.What is the process for return or replacement of PMDXB550UNEZ?
All PMDXB550UNEZ units undergo pre-shipment inspection (PSI). If there is an issue with PMDXB550UNEZ, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The PMDXB550UNEZ part is unused and in its original packaging.
Return procedure for PMDXB550UNEZ:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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